Determination of diffusion length in photovoltaic crystalline silicon by modelisation of light beam induced current |
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| Authors: | Y. Sayad A. Kaminski D. Blanc A. Nouiri M. Lemiti |
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| Affiliation: | 1. Key Laboratory of Low-Dimensional Materials and Application Technologies (Ministry of Education), School of Materials Science and Engineering, Xiangtan University, Hunan 411105, China;2. Institute of Coordination Bond Metrology and Engineering, College of Materials Science and Engineering, China Jiliang University, Hangzhou 310018, China;3. Institute of Nanosurface Science and Engineering, Shenzhen University, Shenzhen 518060, China;4. Harris School of Public Policy, University of Chicago, Chicago, IL 60637, United States;5. NOVITAS, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore |
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| Abstract: | The diffusion length of minority carriers is one of the most important electrical parameters to qualify silicon for photovoltaic applications. One way to evaluate this parameter is to analyse the decay of the current induced when a focused beam is scanned away from the collector using Light Beam Induced Current (LBIC) technique. The LBIC signal was numerically calculated with 2D-DESSIS software under different boundary conditions, as a function of material thickness and surface recombination velocity in order to verify the limitations of analytical models and to fit the LBIC signal measured in thin silicon samples. Samples with thickness ranging from 55 μm to 2500 μm were evaluated with diffusion length values ranging from 70 μm to 2.5 mm. Analytical expressions of the Internal Quantum Efficiency (IQE) were also used to extract the minority carrier bulk and effective diffusion lengths from surface averaged spectral response and reflectivity data in thick solar cells. |
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