Effect of substrate temperature on few-layer graphene grown on Al2O3 (0 0 0 1) via direct carbon atoms deposition |
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| Authors: | Zhongliang Liu Jun Tang Chaoyang Kang Chongwen Zou Wensheng Yan Pengshou Xu |
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| Institution: | 1. School of Physics and Electronic Information, Huaibei Normal University, Huaibei 235000, PR China;2. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, PR China;3. Hefei IRICO Epilight Technology Co., Ltd., Hefei 230011, PR China;1. CIQUP–Centro de Investigação em Química, Departamento de Química e Bioquímica, Faculdade de Ciências, Universidade do Porto, Rua do Campo Alegre, 687, P-4169-007 Porto, Portugal;2. LEPABE–Laboratory for Process Engineering, Environment, Biotechnology and Energy, Faculdade de Engenharia, Universidade do Porto, Rua Dr. Roberto Frias, P-4200-465 Porto, Portugal;1. Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan;2. Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan;3. Center for Condensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan;1. National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan;2. Japan Synchrotron Radiation Research Institute/SPring-8, 1-1-1, Sayo, Hyogo, 679-5198, Japan;3. Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto, 606-8585, Japan;1. Oxford Instruments NanoAnalysis, Halifax Road, High Wycombe HP12 3SE, UK;2. Oxford Instruments NanoAnalysis, 10410 Miller Rd., Dallas, TX 75238, USA;1. Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, PR China;2. National Center for Nanoscience and Technology, 11 Beiyitiao Street, Zhongguancun, Beijing 100190, PR China;3. School of Materials Science and Engineering, Tsinghua University, Beijing 100084, PR China;1. State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China;2. Engineering Research Center on Solid-State Lighting and Its Informationisation of Guangdong Province, Guangzhou 510640, China;3. Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China |
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| Abstract: | Few-layer graphene (FLG) was grown on Al2O3 (0 0 0 1) substrates at different temperatures via direct carbon atoms deposition by using solid source molecular beam epitaxy (SSMBE) method. The structural properties were characterized by reflection high energy electron diffraction (RHEED), Raman spectroscopy and near-edge X-ray absorption fine-structure (NEXAFS). The results showed that the FLG started to form at the substrate temperature of 700 °C. When the substrate temperature increased to 1300 °C, the quality of the FLG was the best and the layer number was estimated to be less than 5. At higher substrate temperature (1400 °C or above), the crystalline quality of the FLG would be deteriorated. Our experiment results demonstrated that the substrate temperature played an important role on the FLG layer formation on Al2O3 (0 0 0 1) substrates and the related growth mechanism was briefly discussed. |
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