Raman scattering of neutron irradiated 6H-SiC |
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| Authors: | P.F. Wang L. Huang W. Zhu Y.F. Ruan |
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| Affiliation: | 1. College of Energy, Xiamen University, Xiamen, Fujian 361102, China;2. School of Computing and Engineering, University of Huddersfield, Huddersfield HD1 3DH, United Kingdom;1. Physics Department, University of Pretoria, Pretoria 0002, South Africa;2. Physics Department, Tshwane University of Technology, P Bag X680, Pretoria 0001, South Africa;3. Joint Institute for Nuclear Research, Dubna, Russia;4. Dubna State University, Dubna, Moscow Region, Russia;5. National Research Nuclear University MEPhI, Moscow, Russia;6. Centre for HRTEM, Nelson Mandela University, Port Elizabeth, South Africa;7. Department of Physics, Nelson Mandela University, P. O. Box 77000, Port Elizabeth 6031, South Africa;8. Department of Physics, Sefako Makgatho Health Science University, P. O. Box 94, Medunsa 0204, South Africa;1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, People’s Republic of China;2. Graduate School of the Chinese Academy of Sciences, Beijing 100049, People’s Republic of China;1. Research Laboratory for Nuclear Reactors, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8550, Japan;2. Department of Nuclear Engineering, Graduate School of Science and Engineering, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8550, Japan;3. J-PARC Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195, Japan;1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, Shanghai 200050, China;2. University of Chinese Academy of Sciences, Beijing 100049, China;1. Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, New South Wales 2232, Australia;2. Australian Synchrotron, 800 Blackburn Road, Clayton, Victoria 3168, Australia |
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| Abstract: | Confocal micro-Raman spectroscopy was preformed to investigate the structural damage of SiC neutron irradiated with the fluences of 1.72×1019 and 1.67×1020 n/cm2. In addition to characteristic peaks, several additional signals related to Si–Si, Si–C, and C–C vibration modes were monitored. The vibration mode associated with CSiV C complexes was identified to be the unambiguous peak at 575 cm?1 which appears initially in the sample post-irradiation annealed at 800 °C. The defect-induced phonon confinement effect results in an asymmetric broadening with a low-frequency tail of the optical phonon peaks. The sigmoidal thermal recovery behavior of the optical phonon frequencies indicates that the reduction of FLO0/6–FTO2/6 splitting originates mainly from the isolated vacancies and interstitials. |
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