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BN,AlN, GaN,InN: Charge Neutrality Level,Surface, Interfaces,Doping |
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| Authors: | Brudnyi V N |
| Institution: | 1.National Research Tomsk State University, Tomsk, Russia ; |
| Abstract: | Russian Physics Journal - On the basis of the charge neutrality concept, the analysis is fulfilled of the experimental data on the electron properties of the defective semiconductors after the... |
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