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Graphene growth on h-BN by molecular beam epitaxy
Authors:Jorge M. Garcia  Ulrich Wurstbauer  Antonio Levy  Loren N. Pfeiffer  Aron Pinczuk  Annette S. Plaut  Lei Wang  Cory R. Dean  Roberto Buizza  Arend M. Van Der Zande  James Hone  Kenji Watanabe  Takashi Taniguchi
Affiliation:1. MBE Lab, IMM-Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8, PTM, E-28760 Tres Cantos, Madrid, Spain;2. Department of Physics, Columbia University, New York, NY, USA;3. Electrical Engineering Department, Princeton University, NJ, USA;4. Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA;5. School of Physics, Exeter University, Exeter, UK;6. Department of Mechanical Engineering, Columbia University, New York, NY, USA;7. Department of Electrical Engineering and Department of Mechanical Engineering, Columbia University, New York, NY, USA;8. Advanced Materials Laboratory, National Institute for Materials, Science, 1-1 Namiki, Tsukuba 305-0044, Japan;1. Institute of Electronics, National Taiwan University, Taipei, Taiwan;2. Research Center for Applied Sciences, Academia Sinica, 128 Sec. 2, Academia Road, Nankang, Taipei 11529 Taiwan;3. Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung, Taiwan;4. College of Photonics, National Chiao-Tung University, Tainan, Taiwan;1. Graduate Institute of Electronics Engineering, National Taiwan Univeristy, Taipei, Taiwan, ROC;2. Research Center for Applied Science, Academia Sinica, Nankang, Taipei, Taiwan, ROC;3. Institute of Display, National Chiao-Tung University, Hsinchu, Taiwan, ROC;1. Department of Mechanical and Manufacturing Engineering, University of Cyprus, 1678 Nicosia, Cyprus;2. Department of Mechanical Engineering, Khalifa University of Science, Technology & Research, Abu Dhabi, United Arab Emirates;1. Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH 45433, United States;2. Wyle Laboratories, Inc., 2601 Mission Point Blvd., Dayton, OH 45431, United States;3. University of Dayton Research Institute, University of Dayton, Dayton, OH 45469, United States
Abstract:
The growth of single layer graphene nanometer size domains by solid carbon source molecular beam epitaxy on hexagonal boron nitride (h-BN) flakes is demonstrated. Formation of single-layer graphene is clearly apparent in Raman spectra which display sharp optical phonon bands. Atomic-force microscope images and Raman maps reveal that the graphene grown depends on the surface morphology of the h-BN substrates. The growth is governed by the high mobility of the carbon atoms on the h-BN surface, in a manner that is consistent with van der Waals epitaxy. The successful growth of graphene layers depends on the substrate temperature, but is independent of the incident flux of carbon atoms.
Keywords:
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