Magnetic domain wall motion by current injection in CoPt nanowires consisting of notches |
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| Authors: | Su Jung Noh Yasuyoshi Miyamoto Naoto Hayashi Ji Sung Lee Young Keun Kim |
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| Institution: | 1. Department of Materials Science and Engineering, Korea University, Seoul 136-713, Republic of Korea;2. Science and Technology Research Laboratories, NHK (Japan Broadcasting Corporation), Tokyo 157-8510, Japan;1. Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea;2. Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Republic of Korea;3. High Temp. Energy Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea;4. School of Materials and Science Engineering, UNIST, Ulsan 689-798, Republic of Korea;5. KIST-UNIST Ulsan Center for Convergent Materials, UNIST, Ulsan 689-798, Republic of Korea;6. Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea;7. Department of Nanomaterials Science and Technology, Korea University of Science and Technology, Daejeon, 305-333, Republic of Korea;1. School of Mathematics and Physics, China University of Geosciences (Wuhan), Wuhan 430074, People''s Republic of China;2. No. 3 Department, Air Force Early Warning Academy, Wuhan 430019, People''s Republic of China;3. Institute of Material Modelling and Computational Physics, China University of Geosciences (Wuhan), Wuhan 430074, People''s Republic of China;1. Department of Chemistry, Virginia Commonwealth University, Richmond, VA 23284, USA;2. Department of Physics, University of Texas at El Paso, El Paso, TX 79968, USA;3. Nanotechnolegy and Nanometrology Laboratory, National Institute for Standards, Giza 12211, Egypt;1. Departamento de Electricidad y Electrónica, Universidad del País Vasco (UPV/EHU), 48080 Bilbao, Spain;2. Department of Magnetism and Magnetic Nanomaterials, Ural Federal University, 620002 Ekaterinburg, Russia;3. SGIker, Servicios Generales de Investigación, Universidad del País Vasco (UPV/EHU), 48080 Bilbao, Spain;4. Departamento de Física – Laboratório de Filmes Finos e Superfícies, Universidade Federal de Santa Catarina (LFFS,/ UFSC), 88040900 Florianópolis, Brazil;5. Laboratório Central de Microscopia Eletrônica, Universidade Federal de Santa Catarina (LCME/UFSC) 88040900 Florianópolis, Brazil |
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| Abstract: | Magnetic domain wall behaviors in CoPt nanowires consisting of multiple pairs of notches were investigated by experimental measurements as well as by micromagnetic modeling. The nanowires were fabricated by ion-beam sputter deposition and e-beam lithography where one to three triangular shaped notches were installed at an interval of 1 μm. Based on the evaluated I–V characteristics, we observed that differential resistance curves showed two peaks with a local minimum at around zero current; the domain wall was trapped between the current ranges within these two peaks. As the number of notch was increased, the resistance of the nanowire became larger. |
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