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Study of isolated cubic GaN quantum dots by low-temperature cathodoluminescence |
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| Authors: | JP Garayt JM Grard F Enjalbert L Ferlazzo S Founta E Martinez-Guerrero F Rol D Araujo R Cox B Daudin B Gayral Le Si Dang H Mariette |
| Institution: | aGroup “Nanophysique et Semiconducteurs”, CEA/DRFMC/SP2 M, 17 Avenue des Martyrs, 38054 Grenoble, France;bGroup “Nanophysique et Semiconducteurs”, CNRS/Laboratoire de Spectrométrie Physique, BP87, F-38402 Saint-Martin d’Hères, France;cCNRS/LPN, site d’Alcatel, Route de Nozay, F-91460 Marcoussis, France;dMaterial Science Department, University of Cadix, 11510 Puerto Real, Spain |
| Abstract: | We report single dot spectroscopy of cubic GaN/AlN self-assembled quantum dots. Typical linewidths of the zero-phonon line between 2 and 8 meV are observed and interpreted in terms of charge fluctuations around a given quantum dot. The phonon sideband contribution in this emission, even at low temperature, reveals the importance of the acoustic phonon broadening mechanism which controls the exciton dephasing and may impose the real limits to the optical properties of GaN single QDs emission. |
| Keywords: | Quantum dots Micro-cathodolumiescence Cubic nitrides |
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