Collective excitations in semiconductor superlattices |
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| Affiliation: | 1. Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, College of Energy and Environmental Science, Yunnan Normal University, Kunming 650500, China;2. Yunnan Key Laboratory of Opto-electronic Information Technology, Yunnan Normal University, Kunming 650500, China;1. Physics Department, Taras Shevchenko National University of Kyiv, 64/13 Volodymyrska str., 01601 Kyiv, Ukraine;2. Laser Optics Research Center, Physics Department, US Air Force Academy, CO, 80840, USA;3. Department of Physics, University of Colorado at Colorado Springs, USA;4. Center for Plasmonics, Nanophotonics, and Metamaterials Colorado Springs, Colorado, 80918, USA;1. School of Materials and Chemical Technology, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8550, Japan;2. Faculty of Pharmaceutical Sciences, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan |
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| Abstract: | ![]()
Collective excitations in semiconductor superlattices are studied beyond tbe random-phase approximation (RPA). The Singwi, Tosi, Land and Sjölander (STLS) theory, which accounts for exchange and short-range correlations effects through an effective potential depending on the structurc factor, is generalized to the layered electron system described by the model of Visscher and Falicov. The exact numerical solution of the STLS self-consistent equations provides information about intraplane and interplane correlations. The plasmon dispersion curves are evaluated for some typical values of the coupling constant rs of the electron system and the distance between the planes for GaAs/AlGaAs semiconductor superlattices. For comparison, the RPA and the Hubbard approximation are also considered. |
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