| 镓铝砷LED中的深能级及其对光电特性的影响 |
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| 引用本文： | 胡恺生,高瑛,苏锡安,刘学彦,温庆祥.镓铝砷LED中的深能级及其对光电特性的影响[J].发光学报,1981,2(2):34-44. |
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| 作者姓名： | 胡恺生 高瑛 苏锡安 刘学彦 温庆祥 |
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| 作者单位： | 中国科学院长春物理所 |
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| 摘 要： | 众所周知,杂质缺陷对半导体器件性能有很大的影响,所以引起人们极大的兴趣。所谓深能级,一般是指不易离化、电离能超过几个kT的能级。象半导体中Cu,Fe,Co,Ni过渡金属,氧,空位及其络合物都能形成电离能较大的深能级。
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| 收稿时间： | 1981-03-19 |
DEEP LEVEL IN GaxAl1-xAs LED AND THE INFLUENCE ON THE OPTICAL AND ELECTRICAL PROPERTIES |
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| Hu Kai-sheng,Gao Ying,Su Xi-an,Liu Xue-yan,Wen Qing-xiang.DEEP LEVEL IN GaxAl1-xAs LED AND THE INFLUENCE ON THE OPTICAL AND ELECTRICAL PROPERTIES[J].Chinese Journal of Luminescence,1981,2(2):34-44. |
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| Authors: | Hu Kai-sheng Gao Ying Su Xi-an Liu Xue-yan Wen Qing-xiang |
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| Institution: | Changchun Institute of Physics Chinese Academy of Sciences |
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| Abstract: | Deep level in GaxAl1-xAs LEDs are studied by thermally stimulated capacitance and relaxation capacitance.Depth, concentration and capture cross section of deep levels can be determined from experimental results.Both increase of the voltage threshold of I(Ⅴ) curve at forward bias, even with negative resistance and significant decrease of capacitance are observed with decreasing temperature. These changes can not be explained by considering shift ofF ermi level and change of permittivity with temperature. Both decrease of breakdown voltage of negative resistance and increase of capacitance were found when LEDs are illumi-neted by infrared radiation. A new main peak (1.26ev) of light emission of LEDs is observed at liquid nitrogen temperature, possibly owing to oxygen contamination. |
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