Influence of post-annealing temperature on properties of ZnO:Li thin films

Li-doped ZnO thin films were prepared on glass substrates by DC reactive magnetron sputtering. The influence of post-annealing temperature on the electrical, structural, and optical properties of the films was investigated. A conversion from p-type conduction to n-type in a range of temperature was confirmed by Hall measurement. The optimal p-type conduction is achieved at the annealing temperature of 500 °C with a resistivity of 57 Ω cm, carrier concentration of 1.07 × 10¹⁷ cm^?3 and Hall mobility of 1.03 cm² V^?1 s^?1. From the temperature-dependent PL analysis, the energy level of Li_Zn acceptor was determined to be 140 meV above the valence band.