Inducing a high twisted conformation in the polyimide structure by bulky donor moieties for the development of non-volatile memory |
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| Authors: | Tadanori Kurosawa An-Dih Yu Tomoya Higashihara Wen-Chang Chen Mitsuru Ueda |
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| Institution: | 1. Department of Organic and Polymeric Materials, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan;2. Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan;3. Institute of Polymer Science and Engineering, National Taiwan University, Taipei 10617, Taiwan |
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| Abstract: | Two polyimides, PI(DAT-6FDA) and PI(DAPT-6FDA), from N-(2,4-diaminophenyl)-N,N-diphenylamine (DAT) or N-(4-(2′,4′-diaminophenoxy)phenyl-N,N-diphenylamine (DAPT) and 4,4′-(hexafluoroisopropylidene)diphthalic anhydride (6FDA) were prepared to clarify the structural effect on the resulting memory properties. The memory device based on PI(DAT-6FDA) showed an unstable volatile behavior, while the device based on PI(DAPT-6FDA) with a more bulky donor (D) unit exhibited a stable non-volatile FLASH type memory characteristic with a long retention time over 104 s. The theoretical simulation based on the density functional theory (DFT) suggested that the greater distinct charge separation between the ground and charge transfer (CT) states led to a highly stable memory behavior. Also, it was clarified that PI(DAPT-6FDA) had a highly twisted conformation compared to PI(DAT-6FDA) in the ground state, and a more twisted dihedral angle between the D and acceptor (A) units was induced in the CT state, which led to the non-volatile memory characteristic. |
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| Keywords: | Polyimide Memory device Non-volatile memory Twisted conformation |
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