Crystallizable Polyphenylacetylene-Preparation and Solution Properties

The molecular weight distribution (MWD) of crystallizable polyphenylacetylene prepared near room temperature in the presence of ferric acetylacetonate and triethylaluminum was determined through use of fractions characterized by vapor pressure osmometry and gel permeation chromatography (GPC). The number- and weight-average molecular weights (M _n and M _w) are both less than the molecular weight corresponding to the maximum of the weight distribution function, which lacks a high molecular weight tail. M _wandM _n is less than is consistent with models allowing for chain termination characteristic of vinyl polymers. GPC elution volumes are much less than those characteristic of polystyrene of similar molecular weight, and the Mark-Houwink exponent is high (2.4 for M _v 4800 to 6800). These data indicate more rodlike behavior than for polystyrene of equivalent molecular weight. The MWD and other data suggest intramolecular chain termination, possibly associated with the molecule's tendency to form paramagnetic defect states.     

Effect of low-temperature processing on dry film photoresist properties for flexible electronics

This study presents the mechanical characterization of the dry film photoresist PerMX and its adhesion properties when laminated onto Kapton® E (PI) and Melinex® ST506 (PET). Additionally, the processing temperature, the adhesion strength, and the neutral plane position are investigated and optimized. A relatively low-temperature (85 °C) process is developed to protect the integrity of the polymers with low glass transition temperature and reduce the thermal mismatch stress. Reduction in processing temperature led to a decrement in the adhesion strength. To counteract this unwanted effect, surface treatments (oxygen plasma) are performed on the polymer surface before lamination. Using the latter techniques, adhesion of PerMX to PET (hard bake: 1 h at 85 °C) is increased from 0.07 to 0.26 N mm⁻¹ (variation of 270%). Finally, the mechanical robustness is investigated and increased by tuning the position of the neutral plane, after 50,000 bending cycles and a radius of curvature of 2.5 mm. © 2013 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2013     

含POSS光刻胶材料研究进展

光致抗蚀剂又称光刻胶，是微电子加工过程中的关键材料。多面体低聚倍半硅氧烷（POSS）是一种具有规则的笼型结构的聚合物增强材料，由POSS改性的聚合物实现了有机-无机纳米杂化，POSS刚性结构的引入阻碍了聚合物分子的运动，可以显著提高聚合物的玻璃化转变温度（T_g），降低聚合物的介电常数，提高聚合物的力学性能，也提高了含POSS光致抗蚀剂的耐蚀刻性。基于这些优点，含POSS的光刻胶材料得到广泛关注。本文对含POSS光刻胶的研究进展作了简要介绍。     

Controllable photopatterning and photochemical properties of novel copolymer containing dianthracene langmuir–blodgett films

A new series of copolymer poly(N‐hexadecylmeth acrylamide‐co‐bis(anthracen‐9‐ylmethyl) 2‐allylmalonate) [poly(HDMA‐co‐DAnMAMA)]s containing swallow‐tailed double anthracenyl groups and long alkyl group are designed and synthesized. The main route of the photochemical reaction of the p(HDMA‐DAnMAMA)copolymer Langmuir–Blodgett (LB) films is dimerization reaction between the anthracenyl groups under the irradiation of both 365 and 248 nm for limiting irradiation time, resulting to a fine negative‐tone pattern. On the other hand, the anthracenyl groups act just as photodecomposition group under 248 nm for longer irradiation time, resulting to a fine positive‐tone pattern. Consequently, positive‐tone and negative‐tone pattern are obtained by choosing not only a suitable irradiation light wavelength, but the irradiation time at 248 nm. Moreover, it is found that the exposed and unexposed regions of copolymer LB films irradiated at 248 nm have solubility differentiation in gold etchant (I₂/NH₄I/C₂H₅OH/H₂O), that is to say, the gold photopatterns with the maximal resolution of the used mask can be obtained easily without any development process. © 2011 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 50: 139–147, 2012     

一种248nm光刻胶成膜树脂的合成及相关性能研究

通过自由基共聚合,制备了前驱体共聚物聚对特丁氧酰氧基苯乙烯-共-N-羟基-5-降冰片烯-2,3-二甲酰亚胺甲基丙烯酸酯,该共聚物可以通过热解而部分脱除酚羟基上的保护基,得到目标共聚物聚对羟基苯乙烯-共-N-羟基-5-降冰片烯-2,3-二甲酰亚胺甲基丙烯酸酯-共-对特丁氧酰氧基苯乙烯.通过对具有合适分子量的目标共聚物的有机溶剂溶解性、热性能、成膜性、抗干蚀刻能力和在248nm处光学吸收(为0.212μm-1)性能进行研究,表明该聚合物能满足248nm光刻胶成膜树脂的要求;此外,目标共聚物还具有酸致脱保性能.具有合适分子量和脱保率的目标共聚物,通过对其酸解留膜率的测试,推测其可能满足248nm光刻胶的曝光显影工艺过程.     

A Simplified Model for the Etch Rate of Novolac-Based Photoresist

The novolac-based resins used as positive-tone photoresists are frequently etched in an oxygen plasma. It is desirable to have a predictive model of the photoresist etch rate but, for process improvement, control, and analysis, the development of a rigorous mechanistic model is impractical. Instead, a simplified mechanistic model is derived, here, according to the method proposed by Hougen and Watson for the study of fluid–solid interactions. This model derivation method is employed in order to arrive at a functional form that represents chemical etching of the resist by oxygen radicals, assisted by the plasma ion flux. Values for model parameters are determined from process data by nonlinear regression. The quality of the model fit to the data is tested statistically.     

Characterization of the morphology and composition of commercial negative resists used for lithographic processes

We present a spectroscopic and microscopic characterization of the chemical composition, structure, and morphology of two commercial negative resists using Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). For this purpose, films of a novolak-based resist (ma-N 2400) and hydrogen silsesquioxane (HSQ) are treated under different conditions (temperature, deep ultraviolet (DUV) exposure, CHF₃ plasma). Topographic AFM images show that both heating and DUV exposure strongly affect the surface morphology of as-prepared ma-N 2400 resist films. These different treatment conditions also lead to decreasing roughnesses, which indicates structural reorganization. Furthermore, the decrease of the photoactive compound (bisazide) in the ma-N 2400 resist films, observed in FTIR spectra, suggests cross-linking of the resist after CHF₃ plasma treatment, heating, or DUV exposure. XPS measurements on different CHF₃ plasma-treated surfaces reveal that a structurally homogeneous fluorine-containing polymer is generated that is responsible for an enhanced etch resistance. FTIR measurements of HSQ films show a correlation between the degree of HSQ cross-linking and baking time.     

Photoreactions of a polyamic acid containing 2,2-dinitrodiphenylmethane segments at symmetrical positions in the main chain

A polyamic acid containing 2,2^′-dinitrodiphenylmethane segments in the main chain was synthesized from 4,4^′-diamino-2,2^′-dinitrodiphenylmethane and pyrromellitic dianhydride. Irradiation of the polyamic acid was done in solution (in a protic solvent, isopropanol, in isopropanol in the presence of a triplet exciter, benzophenone and in acidified isopropanol) and as thin film. The irradiations were done in an immersion type photoreactor using a 125 W high-pressure mercury vapour lamp. The average molecular weights of the polymers were determined by gel permeation chromatography. The polydispersity index of the polyamic acid and the photoproduct showed the absence of photodegradation. The photoproducts were identified by comparing the spectra of polymer photoproducts with that of low molecular weight 2,2^′-dinitrodiphenylmethane derivatives under identical conditions. A possible mechanism for the phototransformations is suggested. Evaluation of photoresist behaviour of the polyamic acid was also done.     

X射线光刻胶的研究

合成了甲基丙烯酸缩水甘油酯与甲基丙烯酸氯乙酯和甲基丙烯酸氯乙酯与甲基丙烯酸甲酯共聚物,并研究了该共聚物的分子量分布、结构和热稳定性能。研究了甲基丙烯酸缩水甘油酯与甲基丙烯酸氯乙酯正性X射线光刻胶。该光刻胶具有热稳定性和高分辨率性。最低线幅宽度为0.1μm。     

用于浸没式工艺的光刻胶研究进展

浸没式光刻技术是在原干法光刻的基础上采用高折射率浸没液体取代原来空气的空间,从而提高光刻分辨率的一种先进技术.此项技术的实际应用,为当前IC产业的飞速发展起到了关键的作用.本文概述了浸没式光刻技术的发展历程和浸没式光刻胶遇到的挑战及要求;对浸没式光刻胶主体树脂、光致产酸剂及添加剂的研究进展进行了综述;最后对浸没式光刻胶的研究发展方向作了进一步的探讨及初步预测.