一种基于STM32的NAND flash的块分配框架设计

STM32对大容量数据文件存储与管理问题可通过NAND flash来解决。而NAND flash的高效管理需要文件系统参与。NAND flash有特殊的块读写及擦除机制,一般的嵌入式文件系统组织结构并不完全兼容NAND flash。针对NAND flash的特点兼顾STM32的资源承受力要提出新的NAND flash块分配框架,框架通过块分配槽这种数据结构,在不使用块分配表与垃圾表的情况下,实现了NAND flash均衡负载与垃圾块的回收;同时通过节点分配栈与文件节点表的配合来提高STM32对文件的读写速度,空间利用率和系统性能。仿真实验和计算结果表明该块分配框架可有效提高NAND flash块的均衡负载与节省RAM空间。     

Numerical simulation of effects of flow maldistribution on heat and mass transfer in a PEM fuel cell stack

A 3D numerical study was carried out to analyze flow, heat and mass transfer first in a single half-cell cathode channel of proton exchange membrane (PEM) fuel cell. From practical point of view, it is necessary to put the appropriate number of cells in a stack. Hence, the above study on a single half-cell is extended to a stack of channels. Due to stacking, the assumption of uniform flow distribution would no longer hold true. Therefore, the channel flow-maldistribution is considered. The water formed at the active surface due to the electrochemical reaction diffuses through the porous layer and eventually enters the gas flow duct. The higher gas velocities in the duct result in faster water vapour removal which leads to a lower value of water vapour into the duct and hence a lower Nusselt number.     

硒蒸气浓度对制备CIGS薄膜的影响

采用“预制层硒化法”制备CuIn_1-xGa_xSe₂ (CIGS)薄膜. 基于自主设计的“双层管式硒化装置”, 通过控制硒蒸气浓度优化退火工艺, 研究硒蒸气浓度对薄膜光电性能的影响. 利用俄歇电子能谱(AES)和X射线衍射分析(XRD)等手段对不同硒浓度氛围下生成的CIGS薄膜的成分和物相进行表征, 并在AM1.5、1000 W·m^-2的标准光照条件下比较相应CIGS电池器件的输出性能. 实验结果表明: 饱和硒蒸气下退火得到的样品, 基底钼膜遭到严重腐蚀破坏, 失去背电极功能; 在低浓度硒气氛下退火不能有效消除CIGS薄膜的偏析和缺陷, 以致光电转换效率低; 而在无硒惰性氛围下退火的样品, 生成了物相均一化的CIGS薄膜, 由此制备的CIGS电池取得了8.5%的转换效率.     

Improved charge trapping flash device with Al2O3/HfSiO stack as blocking layer

In this paper, we investigate an Al₂O₃/HfSiO stack as the blocking layer of a metal-oxide-nitride-oxide-silicon-type (MONOS) memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al₂O₃/HfO₂ stack as the blocking layer, the sample with the Al₂O₃/HfSiO stack as the blocking layer shows high program/erase (P/E) speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al₂O₃/HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications.     

Stack structures on GIT quotients parametrizing hypersurfaces

We suggest to endow Mumford's GIT quotient scheme with a stack structure, by replacing Proj(?) of the invariant ring with its stack theoretic analogue. We analyse the stacks resulting in this way from classically studied invariant rings, and in particular for binary forms of low degree. Our viewpoint is that the stack structure carries interesting geometric information that is intrinsically present in the invariant ring, but lost when passing to its Proj(?). © 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim     

Migration of protons in a chain of tyrosine residues

This article deals with the proton migration in a tyrosine stack, which models the proton channels existing in a number of proteins, including tubulin. The magnesium ion Mg²⁺ within the complex with guanosine triphosphate facilitates dissociation of a water molecule through initiating a shift of protons along the chain composed of relatively distant tyrosine residues. The process is thermodynamically stable (ΔG₂₉₈<0). The energy barrier for the protein shift does not exceed 3.15 kJ/mole. A relatively weak electrostatic field mimicking electret properties of proteins facilitates long‐distance proton migration. © 2001 John Wiley & Sons, Inc. Int J Quantum Chem 84: 409–415, 2001     

Molecular dynamics simulation comparison of atomic scale intermixing at the amorphous Al2O3/semiconductor interface for a-Al2O3/Ge, a-Al2O3/InGaAs, and a-Al2O3/InAlAs/InGaAs

The structural properties of a-Al₂O₃/Ge, a-Al₂O₃/In_0.5Ga_0.5As and a-Al₂O₃/In_0.5Al_0.5As/InGaAs interfaces were investigated by density-functional theory (DFT) molecular dynamics (MD) simulations. Realistic a-Al₂O₃ samples were generated using a hybrid classical-DFT MD “melt and quench” approach. The interfaces were formed by annealing at 700 K/800 K and 1100 K with subsequent cooling and relaxation. The a-Al₂O₃/Ge interface demonstrates pronounced interface intermixing and interface bonding exclusively through Al–O–Ge bonds generating high interface polarity. In contrast, the a-Al₂O₃/InGaAs interface has no intermixing, Al–As and O–In/Ga bonding, low interface polarity due to nearly compensating interface dipoles, and low substrate deformation. The a-Al₂O₃/InAlAs interface demonstrated mild intermixing with some substrate Al atoms being adsorbed into the oxide, mixed Al–As/O and O–Al/In bonding, medium interface polarity, and medium substrate deformation. The simulated results demonstrate strong correlation to experimental measurements and illustrate the role of weak bonding in generating an unpinned interface for metal oxide/semiconductor interfaces.     

Moduli stacks and invariants of semistable objects on K3 surfaces

For a K3 surface X and its bounded derived category of coherent sheaves D(X), we have the notion of stability conditions on D(X) in the sense of T. Bridgeland. In this paper, we show that the moduli stack of semistable objects in D(X) with a fixed numerical class and a phase is represented by an Artin stack of finite type over C. Then following D. Joyce's work, we introduce the invariants counting semistable objects in D(X), and show that the invariants are independent of a choice of a stability condition.     

Interface control of high-k gate dielectrics on Ge

Important progress has been made in the passivation of Ge/gate dielectric interfaces. One important approach is by thermally oxidized GeO₂ interface and ALD high-k layers, with an interface state density D_it ∼ 2 × 10¹¹ cm⁻² eV⁻¹. Another approach is with an epi-Si/SiO₂ interface, resulting in similar D_it. Hysteresis and V_th shift, however, are still not optimal. Extensive material characterization and theoretical insights help us understanding the root cause of these remaining issues and show the way to improved interface control.     

Fibrations of topological stacks

In this note we define fibrations of topological stacks and establish their main properties. When restricted to topological spaces, our notion of fibration coincides with the classical one. We prove various standard results about fibrations (long exact sequence for homotopy groups, Leray–Serre and Eilenberg–Moore spectral sequences, etc.). We prove various criteria for a morphism of topological stacks to be a fibration, and use these to produce examples of fibrations. We prove that every morphism of topological stacks factors through a fibration and construct the homotopy fiber of a morphism of topological stacks. As an immediate consequence of the machinery we develop, we also prove van Kampen?s theorem for fundamental groups of topological stacks.