微微秒叶绿素染料激光器的研究

本文报道用一台对撞脉冲锁模Nd:YAG激光器的三倍频光作为泵浦光源,采用超短腔结构,获得叶绿素的红色ps脉冲激光输出的装置和实验结果。研究了叶绿素a和b在各种聚合状态下输出激光波长随染料浓度的变化关系,当叶绿素a-乙醇溶液浓度为2×10~(-3)M,激光腔长<36μm时可获得单模调谐ps系列脉冲输出,激光束的发散角≈60mrad。     

共焦非稳腔中ps激光的内腔倍频

考虑倍频晶体相位匹配接收角（Angular acceptance）对倍频转换效率的影响,设计了正支（p支）共焦非稳腔Nd:YAP锁模激光器。平行光通过晶体实现完全相位匹配。以BBO和KTP作为腔内倍频元件,分别获得80.6%和60.2%的高效倍频转换,及几十mJ的绿光输出。同时实验测定其它有关参数。     

Light induced adsorption of Si nano-composites in LiF crystals at 157 nm

Si nano-composites were precipitated on LiF crystals following ablation from Si targets with laser light at 157 nm. The LiF/Si interface was analyzed with scanning electron microscopy, atomic force microscopy and energy dispersive X-ray microanalysis. It was found that Si composites were strongly attached to LiF ionic sites to form inhomogeneous structures consisted of small isotropic crystals 0.1-1 μm long, rich in Si and fluorine, which eventually further agglomerate to form larger structures. The thickness of the LiF/Si interface was increased from 50 nm to 2 μm following laser irradiation at 157 nm, due to accelerated adsorption of Si in the LiF interface by VUV light.     

藻胆体发射终端能量传递过程的研究

利用超快速时间分辨光谱研究了蓝绿藻藻胆体的２个变藻蓝发射终端（ＡＰＢ,ＡＰＩ）单体和三聚体内的能量传递过程,探测到ＡＰＢ和ＡＰＩ单体的两组亚基α＾ＡＰ／β＾ＡＰ和α＾ＡＰＢ／β＾ＡＰ间的能量传递时间常数分别为３０ｐｓ和１９４ｐｓ。ＡＰＢ和ＡＰＩ三聚体所共有的９－３２ｐｓ的短寿命组分来源于同一单体内能量由α＾ＡＰ向βＡＰ的传递过程。     

含有Sobolev-Hardy临界指标的奇异椭圆方程Neumann问题无穷多解的存在性

该文研究了如下的奇异椭圆方程Neumann问题$\left\{\begin{array}{ll}\disp -\Delta u-\frac{\mu u}{|x|^2}=\frac{|u|^{2^{*}(s)-2}u}{|x|^s}+\lambda|u|^{q-2}u,\ \ &;x\in\Omega,\\D_\gamma{u}+\alpha(x)u=0,&;x\in\partial\Omega\backslash\{0\},\end{array}\right.$其中$\Omega $ 是 $ R^N$ 中具有 $ C^1$边界的有界区域, $ 0\in\partial\Omega$, $N\ge5$. $2^{*}(s)=\frac{2(N-s)}{N-2}$ (该文研究了如下的奇异椭圆方程Neumann问题$\left\{\begin{array}{ll}\disp -\Delta u-\frac{\mu u}{|x|^2}=\frac{|u|^{2^{*}(s)-2}u}{|x|^s}+\lambda|u|^{q-2}u,\ \ &;x\in\Omega,\\D_\gamma{u}+\alpha(x)u=0,&;x\in\partial\Omega\backslash\{0\},\end{array}\right.$其中$\Omega $ 是 $ R^N$ 中具有 $ C^1$边界的有界区域, $ 0\in\partial\Omega$, $N\ge5$. $2^{*}(s)=\frac{2(N-s)}{N-2}$ (该文研究了如下的奇异椭圆方程Neumann问题其中Ω是RN中具有C1边界的有界区域,0∈■Ω,N≥5.2*(s)=2(N-s)/N-2(0≤s≤2)是临界Sobolev-Hardy指标, 10.利用变分方法和对偶喷泉定理,证明了这个方程无穷多解的存在性.     

X射线皮秒变象管分幅相机研究

本文介绍了我们提出的一种新的实现皮秒分幅摄影的技术方案,其优点是对控制线路要求不高,给出了用计算机对此方案进行数值模拟的结果和新设计的用于这种分幅方案的变象管特性,用直流X射线源测出该变象管的静态空间分辨率为20lp/mm。用激光打靶产生的脉冲X射线测量了相机动态特性,已得到了四幅动态像,每幅曝光时间150ps,空间分辨率3lp/mm。     

砷化镓半导体材料与器件中高频场分布研究的新方法——脉冲电光检测技术

介绍了砷化镓材料和器件中高频电场的分布测量的新方法——谐波混频脉冲电光检测:它的原理、实验装置以及在砷化镓共平面波导中微波驻波场分布测量中应用的结果.在频率高达20.10GHz及开路、短路和50Ω不同的负载条件下测得的结果与理论预计值符合很好.本文最后对方法的灵敏度和空间分辨率进行讨论.     

周期结构GaAs晶体ps脉冲差频产生窄带THz辐射的研究

计算模拟了在ps脉冲抽运周期结构GaAs晶体差频产生窄带THz波过程中,对于不同波长、不同脉宽的抽运光,周期结构GaAs晶体的走离长度和最佳周期长度的变化,并对计算结果进行了理论分析.研究了周期结构GaAs晶体的畴数对THz波光谱的影响.根据GaAs晶体温度色散公式,计算并分析了晶体最佳周期长度的温度调谐特性,研究了温度变化对THz波光谱的影响,提出了通过温度调谐实现在周期结构GaAs晶体中产生宽调谐、窄带宽THz波的新方法,该计算结果为下一步的实验研究提供了理论基础. 关键词： ps脉冲 差频产生窄带THz波 周期结构GaAs晶体 温度调谐     

Investigation of thin TiO2 films cosputtered with Si species

Titanium dioxide (TiO₂) films were fabricated by cosputtering titanium (Ti) target and SiO₂ or Si slice with ion-beam-sputtering deposition (IBSD) technique and were postannealed at 450 °C for 6 h. The variations of oxygen bonding, which included high-binding-energy oxygen (HBO), bridging oxygen (BO), low-binding-energy oxygen (LBO), and three chemical states of titanium (Ti⁴⁺, Ti³⁺ and Ti²⁺) were analyzed by X-ray photoelectron spectroscopy (XPS). The enhancement of HBO and reduction of BO in O 1s spectra as functions of SiO₂ or Si amount in cosputtered film imply the formation of Si-O-Ti linkage. Corresponding increase of Ti³⁺ in Ti 2p spectra further confirmed the property modification of the cosputtered film resulting from the variation of the chemical bonding. An observed correlation between the chemical structure and optical properties, refractive index and extinction coefficient, of the SiO₂ or Si cosputtered films demonstrated that the change of chemical bonding in the film results in the modification of optical properties. Furthermore, it was found that the optical properties of the cosputtered films were strongly depended on the cosputtering targets. In case of the Si cosputtered films both the refractive indices and extinction coefficients were reduced after postannealing, however, the opposite trend was observed in SiO₂ cosputtered films.     

Atomistic computer simulation studies of La1−xSrxVO3

Static computer simulation techniques have been employed for structural investigation of the La_1−xSr_xVO₃ series. Potential parameters for V³⁺-O²⁻ and V⁴⁺-O²⁻ have been derived which reproduces the crystal structures of end members with sufficient accuracy. Variations of lattice parameters and bond distances with Sr concentration have been studied. The calculated lattice parameters decrease with increase in the Sr concentration. A structural phase transition from orthorhombic to cubic is observed at 50% Sr doping level.