Synthesis of anodic silicon oxide films in water-organic solutions containing orthophosphoric acid

Variations in electrophysical properties of anodic silicon oxide at the surface of semiconductor silicon are studied as a function of the composition of electrolytic solutions containing orthophosphoric acid and the conditions of reaching the final formation potential. The optimum conditions for the formation of anodic SiO₂ coatings that include phosphorus-containing admixtures are determined, the coatings being intended for application as diffusates in nanoelectronics.     

Synthesis,Properties, and Applications of 2-D Materials: A Comprehensive Review

Recent advances in atomically thin two-dimensional (2-D) materials have led to a variety of promising future technologies for post-CMOS nanoelectronics and energy generation. This review is an attempt to thoroughly illustrate the current status and future prospects for 2-D materials other than graphene (e.g., BN nanosheets, MoS₂, NbSe₂, WS₂, etc.), which have already been contemplated for both low-end and high-end technological applications. An overview of the different synthesis techniques for 2-D materials is presented here, with an exploration of the potential for developing methods of controllable large scale synthesis. Furthermore, we summarize the underlying theories which correlate the structural and physical properties of 2-D materials with their state-of-the-art applications. Finally, we show that utilizing the unprecedented properties arising from these materials would lead to innovative devices. Such devices would significantly reduce both device dimensions and power consumption, as necessary for the creation of tomorrow's sustainable technology.     

Towards Polyoxometalate‐Cluster‐Based Nano‐Electronics

We explore the concept that the incorporation of polyoxometalates (POMs) into complementary metal oxide semiconductor (CMOS) technologies could offer a fundamentally better way to design and engineer new types of data storage devices, due to the enhanced electronic complementarity with SiO₂, high redox potentials, and multiple redox states accessible to polyoxometalate clusters. To explore this we constructed a custom‐built simulation domain bridge. Connecting DFT, for the quantum mechanical modelling part, and mesoscopic device modelling, confirms the theoretical basis for the proposed advantages of POMs in non‐volatile molecular memories (NVMM) or flash‐RAM.     

Nanometer Scale Electrical Characterization of Artificial Mesostructures

In this article, we review advances in experimental techniques for the electrical characterization of artificial mesostructures from nanometer to micrometer size. As the scale of electronic devices is rapidly approaching the 100-nm benchmark, new tools are becoming necessary to study and characterize them. We are also at a point where new tools to fabricate these devices are becoming increasingly relevant. We discuss the various characterization techniques applicable to objects of this scale, with particular emphasis on scanned probe methods.     

Semiconductor Research Needs in the Nanoscale Physical Sciences: A Semiconductor Research Corporation Working Paper

The purpose of this paper is to identify areas in the basic physical sciences where additional research is needed to sustain the extraordinary progress in electronics that has now extended for several decades. Also, it is argued that basic research will provide the foundation for the discovery of new generations of nanoelectronic devices that will continue the experimental rate of reduction in cost per function. Some of the fundamental areas requiring further research are the chemistry and physics of material interfaces, conductivity at small dimensions, deterministic doping effects, and nanomagnetics. Discovery research also is needed in the functional synergy of nanoelectronic materials and non-traditional fabrication methods.     

Light-emitting diodes with semiconductor nanocrystals

Colloidal semiconductor nanocrystals are promising luminophores for creating a new generation of electroluminescence devices. Research on semiconductor nanocrystal based light-emitting diodes (LEDs) has made remarkable advances in just one decade: the external quantum efficiency has improved by over two orders of magnitude and highly saturated color emission is now the norm. Although the device efficiencies are still more than an order of magnitude lower than those of the purely organic LEDs there are potential advantages associated with nanocrystal-based devices, such as a spectrally pure emission color, which will certainly merit future research. Further developments of nanocrystal-based LEDs will be improving material stability, understanding and controlling chemical and physical phenomena at the interfaces, and optimizing charge injection and charge transport.     

Electron transport in Nano‐Gold–Silicon interfaces

The electron transport characteristics of gold–silicon interfaces are studied using a combined ab initio approach of the Green's function for electron transfer and quantum density functional theory (DFT) for finite and extended systems. The Kohn–Sham Hamiltonian of an extended cluster or molecule and the density of states (DOS) of bulk Si and Au are used to construct the interface Hamiltonian to obtain the DOS, electron transmission, and current–voltage characteristics of the interface. Diode behavior is observed with electron conduction when the gold side is positively biased with a threshold of 0.8 V. The presence of molecules trapped at the interface and the geometry of the metal atoms strongly affect the conductance, implying difficult or even impossible theory–experiment validations. © 2006 Wiley Periodicals, Inc. Int J Quantum Chem, 2007     

Nanotechnology at NASA

Journal of Nanoparticle Research -     

Nanoscience and Engineering: The Next Five Years

The current and planned research in nanoscience and engineering will make possible a paradigm shift in nanoscale devices and structures.     

General solution-based route to V–VI semiconductors nanorods from hydrolysate

V–VI (Bi₂Se₃, Bi₂Te₃, Sb₂Se₃, and Sb₂Te₃) semiconductors nanorods with the diameters of 40–90 nm have been synthesized starting from BiCl₃ (or SbCl₃) and Na₂SeO₃ (or Na₂TeO₃) by using NaH₂PO₂·H₂O as the reduced agent at 140°C for 24 h. The samples were characterized by XRD, SEM and TEM. XPS spectra of the products show the obtained samples are close to stoichiometry. The hydrolysate of the starting materials could be served as the precursor and sharply decreases the growth of the samples; a possible hydrolyzation–reduction–crystallization process was also proposed to explore the formation mechanism of these nanorods.