基于电化学发光和阻抗技术研究DNA单碱基错配

单碱基错配的识别和稳定性差异在核酸多态性研究中至关重要。在同一电化学传感器平台上，采用电化学发光（ECL）和电化学阻抗（EIS）2种技术，协同研究DNA链中不同类型和不同位点的单碱基错配识别和稳定性差异。电极表面具有茎环构象的探针DNA与完全互补DNA、不同类型或不同位点单碱基错配DNA杂交前后的ECL和EIS信号强度变化有显著差异。信号强度变化可揭示单碱基错配识别的稳定性。结果表明，DNA链中心位点的C-A单碱基错配稳定性低于链两端的，靠近键合电极表面双链链端的C-A单碱基错配稳定性低于非键合电极表面双链链端的，同一中心位点C-X碱基对的稳定性顺序为C-G?C-T>C-A≥C-C。研究结果可为核酸多态性研究提供参考。     

基于碳化硅衬底的宽禁带半导体外延

宽禁带半导体具备禁带宽度大、电子饱和飘移速度高、击穿场强大等优势,是制备高功率密度、高频率、低损耗电子器件的理想材料。碳化硅(SiC)材料具有热导率高、化学稳定性好、耐高温等优点,在SiC衬底上外延宽禁带半导体材料,对充分发挥宽禁带半导体材料的优势,并提升宽禁带半导体电子器件的性能具有重要意义。得益于SiC衬底质量持续提升及成本不断降低,基于SiC衬底的宽禁带半导体电子市场占比呈现逐年增加的态势。在SiC衬底上外延生长高质量的宽禁带半导体材料是提高宽禁带半导体电子器件性能及可靠性的关键瓶颈。本文综述了近年来国内外研究者们在SiC衬底上外延SiC、氮化镓(GaN)、氧化镓(Ga₂O₃)所取得的研究进展,并展望了SiC衬底上宽禁带半导体外延的发展及应用前景。     

双路激光混沌复用系统的混沌同步及安全性能研究

针对一种新型的双路激光混沌复用系统, 建立相应的速率方程模型, 详细分析了两个主激光器的单个参数失配、多个参数同时失配、反馈强度差异以及频率失谐对混沌同步性能的影响, 并对此复用系统的安全性能和频谱性能进行了研究. 研究结果表明: 采用参数失配方案, 通过合理选择两个主激光器的参数, 可以保证两个主激光器之间的同步性能较差而两对主从激光器间实现高品质的混沌同步, 因此满足双路激光混沌复用的条件; 两个主激光器之间的参数失配对它们之间的同步性能影响较大, 然而对配对主从激光器间同步性能的影响并不明显, 进一步说明参数失配方案的有效性和可行性. 另外, 通过自相关函数和频谱分别分析混沌复用信号的时域和频域特征, 发现双路激光混沌复用系统可提供更高的安全性.     

Unusually Large Lattice Mismatch‐Induced Optical Behaviors of Au@Cu–Cu2O Core–Shell Nanocrystals with Noncentrally Located Cores

To extend the optical property characterization of metal–Cu₂O polyhedra, 50 nm Au@Cu cubic cores are used to fabricate Au@Cu–Cu₂O core–shell cubes, octahedra, and rhombic dodecahedra with tunable sizes. Despite the unusually large lattice mismatch of 15.1% between Cu and Cu₂O, fine adjustment in the volumes of reagents introduced allows the formation of these heterostructures. To relieve the lattice strain, the metal cores are essentially never found to locate at the particle center, and slight lattice spacing shifts are recorded. Although efforts are made to reduce the heterostructure sizes, the Cu₂O shells are generally too thick to reveal surface plasmon resonance (SPR) absorption band from the metal cores. Only the Au@Cu–Cu₂O cubes with many cores located near the particle corners show observable SPR band red‐shift, but UV–vis spectra of all particle shapes are still dominated by Cu₂O absorption and light scattering bands. Au@Cu–Cu₂O cubes consistently show the most red‐shifted absorption bands than those of octahedra resulting from the optical facet effects.     

The first principles investigation of ferrite magnetic response with mismatch stress

The quasi-ferrite model is proposed and an appropriate PBE exchange functional with the spin density functional theory(SDFT) is selected for the calculation of the relation between magnetic moment and residual stress in ferrite using a quantum mechanics code. The relationship between ferrite magnetism and the carbon content is determined,and then a ferrite interstitial solid solution(ISS) model in a low carbon concentration state is replaced with an α- Fe model in the case of majority magnetic calculation. The band structure of the loaded-Fe is compared with that of the unloaded α-Fe. The comparison shows that the energy of Fe atomic 3d orbital changes a little,while the energy of electron orbital of iron core below 3d almost keeps unchanged. The relationship between the magnetic moment and the stress appears intermittent due to the Bragg total reflection. The change in the magnetic moment due to lattice mismatch is much larger than that caused by mechanical loading.     

Mismatches Improve the Performance of Strand‐Displacement Nucleic Acid Circuits

Catalytic hairpin assembly (CHA) has previously proven useful as a transduction and amplification method for nucleic acid detection. However, the two hairpin substrates in a CHA circuit can potentially react non‐specifically even in the absence of a single‐stranded catalyst, and this non‐specific background degrades the signal‐to‐noise ratio. The introduction of mismatched base pairs that impede uncatalyzed strand exchange reactions led to a significant decrease of the background signal, while only partially damping the signal in the presence of a catalyst. Various types and lengths of mismatches were assayed by fluorimetry, and in many instances, our MismatCHA designs yielded 100‐fold increased signal‐to‐background ratios compared to a ratio of 4:1 with the perfectly matched substrates. These observations could be of general utility for the design of non‐enzymatic nucleic acid circuits.     

Effect of material selection and background impurity on interface property and resulted CIP-GMR performance

In this paper, we investigated the effect of background base pressure, wafer-transferring time between process modules, and stack layer material selection on the current-in-plane giant magneto-resistive (CIP-GMR) interface properties and the resulted CIP-GMR performance. Experimental results showed that seed layer/AFM interface, AFM/pinned layer (PL) interface, pinned layer/Ru interface, and reference layer (RL)/Cu spacer interface are among the most critical ones for a CIP-GMR device. By reducing the background impurity level (water moisture and oxygen), optimizing the wafer process flow sequence, and careful stack-layer material selection, such critical interfaces in a CIP-GMR device can be preserved. Consequently, a much robust GMR performance control can be achieved.     

Effects of divalent alkaline earth ions on the magnetic and transport features of La0.65A0.35Mn0.95Fe0.05O3 (A = Ca, Sr, Pb, Ba) compounds

We have studied the magnetic and transport properties of Fe doped La_0.65A_0.35Mn_0.95Fe_0.05O₃ (A = Ca, Sr, Pb, Ba) manganites. All the compositions show ferromagnetic/metal to paramagnetic/insulator transition (T_C) except the Pb doped sample which is insulating and ferromagnetic (FM) in the entire temperature range. The magnetization and T_C are decreased by decreasing the cation size on La site. The transition temperature and magnetic moment at 77 K is a maximum for Sr doped sample and is decreasing if we increase or decrease the cation size from Sr size. The maximum value of T_C and magnetic moment for Sr based sample is most likely due to the closer ionic sizes of La and Sr as compared to the other dopants (Ca, Pb, and Ba). We observed a spin freezing type effect in the Pb doped sample below 120 K in resistivity, ac susceptibility and in magnetization. This suggests that the AFM interactions introduced by the Fe are most effective in the Pb doped composition leading to increased competition between the FM and AFM interactions. This FM and AFM interaction generates some degree of frustration leading to the appearance of spin glass like phase whose typical magnetic behavior is studied for small ion when the metallic like behavior is lost.     

Biaxial stress‐induced giant bandgap shift in BiFeO3 epitaxial films

Thickness‐dependent stress relaxation and its influence on the bandgap of BiFeO₃ have been investigated. BiFeO₃ films with 15 at% Bi excess allow the control of lattice mismatch‐induced biaxial stress up to 10.8 GPa on SrTiO₃(001) substrates. Heteroepitaxy of such films follows the Stranski–Krastanov growth mode, as suggested by island formation on the wetting layer accompanied with stress relaxation. The bandgap is linearly decreased with the in‐plane compressive stress, and a large stress coefficient of 67 meV/GPa was extracted. A 0.7 eV red‐shift of the bandgap was observed in the fully epitaxially strained film. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effects of phosphorous beam equivalent pressure on GaInAsP/GaAs grown by solid source molecular beam epitaxy with a valve phosphorous cracker cell

We report the growth and characterization of GaInAsP films on GaAs substrates by solid source molecular beam epitaxy (SSMBE) using a valve phosphorous cracker cell at varied white phosphorous beam equivalent pressure (BEP). It is found that the GaInAsP/GaAs can be easily grown with the solid sources, and the incorporated phosphorous composition as a function of the beam equivalent pressure ratio, R=f_P/(f_P+f_As), can be well described by a parabolic relationship. With the increase of the incorporated phosphorous composition, the GaP-, InP-, InAs- and GaAs-like phonon modes shift towards opposite directions and their emission intensities also change. The first three modes shift to larger wave numbers while the last one shifts to smaller wave number. The lattice mismatch, Δa/a, of the materials grown with varied phosphorous BEP follows a linear relationship. Photoluminescence (PL) measurements reveal that as the phosphorous BEP ratio increases, the peak position or energy band gap of the material shifts towards higher energy; the full-width at half-maximum (FWHM) becomes narrower, and the luminescence intensity becomes higher. In addition, the materials also show smooth surfaces that do not change significantly with phosphorous beam equivalent pressure.