Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ～8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic In_xAl_1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded In_xAl_1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As₄/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?10⁷ cm^?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.     

Flexible and Epitaxial Metal Oxide Thin Film Growth by Photoreaction Processing for Electrical and Optical Applications

This review summarizes the use of photoreactions that replace conventional heating processes for growing oxide thin films from chemical solutions. In particular, this review outlines key variables in photoreactions that affect epitaxial and polycrystalline thin film growth, including precursor materials, laser wavelength, laser fluence, and carbon. In addition, the features of the photoreaction process that can be controlled at a low temperature by oxygen non-stoichiometry are examined. Likewise, functions that are neither achieved by developing a gradient structure nor controlled by a thermal equilibrium reaction are detailed. Two new concepts are presented, known as photoreaction of nanoparticles (PRNP) and photoreaction of a hybrid solutions (PRHS), in which crystal nuclei are pre-dispersed in a metal–organic compound film. This method has successfully produced flexible phosphor films used as resistor or thermistor electronic components. Finally, thin film growth using different light sources such as flash lamps and femtosecond lasers (fs) is explored.     

Bridging Two Worlds: Colloidal versus Epitaxial Quantum Dots

An overview is given of two distinct classes of semiconductor quantum dots, epitaxial and colloidal structures that have been studied intensely for more than 30 years by now, however, without large interconnection between the two involved research communities. The largely parallel and independent evolution of the two structure classes may be partly related to the origin of colloidal systems from chemistry, while epitaxial quantum dots have been addressed mostly by the physics community. These independent evolutions are somewhat surprising because the interest in optics‐related applications is shared by both communities. Here, a short summary of the development of the two structure classes, the present status of activities, and some perspectives for future developments are presented.     

RIG型磁光薄膜的研究进展及应用

随着光通信技术与光子集成电路的发展,非互易性器件作为光通信系统中重要的组成部分得到了越来越广泛的研究与应用。基于磁光效应制成的磁光隔离器和环行器是目前应用最为广泛的非互易性器件,为了将非互易性器件整块集成在硅片上,需制备性能与块状磁光材料相当的磁光薄膜。在近红外通信波段(1 550 nm),以钇铁石榴石(Y₃Fe₅O₁₂,YIG)为代表的稀土铁石榴石(RIG)具备优良的磁光效应,是最具应用前景的磁光材料之一。研究发现,使用稀土离子对YIG薄膜进行掺杂可以有效改善其磁光性能,尤其是Bi³⁺和Ce³⁺掺杂的YIG表现出巨法拉第效应。本文首先介绍了法拉第效应原理,介绍了三种常见磁光薄膜的生长方法,回顾了近年来的主要研究成果,介绍了磁光薄膜在光隔离器和环行器中的应用,最后对磁光薄膜的未来发展趋势进行了展望。     

凝胶渗透色谱-气相色谱-离子阱质谱法测定桔梗原药和当归提取物中101种农药残留

建立了凝胶渗透色谱（GPC）-气相色谱-离子阱质谱同时检测桔梗原药和当归提取物中101种农药残留的分析方法。方法采用乙腈超声辅助提取桔梗原药和当归提取物,浓缩提取液至近干后用乙酸乙酯-环己烷（1∶1, v/v）复溶,采用凝胶渗透色谱法（选取40 cm长、内径20 mm的凝胶渗透色谱柱）对样品进行净化,弃去前段含脂类、色素等杂质的流出液,收集17~30 min洗脱液并旋转蒸发浓缩至近干,甲苯1 mL定容上机。选用DB-5MS毛细管色谱柱分离待测物,通过离子阱质谱实现对101种农药残留的高效检测。方法通过优化前处理条件和离子阱二级质谱参数,有效降低了复杂中药基质对待测化合物的干扰,最大限度提高了样品中农药的定量准确性和回收率,101种农药3水平添加的平均回收率为58.3%~108.9%,每个添加水平10次独立重复测定的相对标准偏差为0.4%~16.5%,检出限（LOD）范围为0.2~40.0 μg/kg,可满足当前韩国、日本、欧洲规定的最大残留限量（maximum residue limits, MRLs）要求。方法具有操作简单快速、灵敏度高、重复性好等特点,凝胶渗透色谱技术的应用克服了固相萃取小柱净化容量不足的弊端,离子阱技术的应用可以进一步排除共流出基体杂质的干扰,提高定量和定性的准确性,检测效果优于常用的气相色谱-质谱法,是对中药中同时分析多种农药残留检测方法的有益补充。     

Epitaxial growth of borophene on substrates

Borophene, a two-dimensional (2D) planar boron sheet, has attracted dramatic attention for its unique physical properties that are theoretically predicted to be different from those of bulk boron, such as polymorphism, superconductivity, Dirac fermions, mechanical flexibility and anisotropic metallicity. Nevertheless, it has long been difficult to obtain borophene experimentally due to its susceptibility to oxidation and the strong covalent bonds in bulk forms. With the development of growth technology in ultra-high vacuum (UHV), borophene has been successfully synthesized by molecular beam epitaxy (MBE) supported by substrates in recent years. Due to the intrinsic polymorphism of borophene, the choice of substrates in the synthesis of borophene is pivotal to the atomic structure of borophene. The different interactions and commensuration of borophene on various substrates can induce various allotropes of borophene with distinct atomic structures, which suggests a potential approach to explore and manipulate the structure of borophene and benefits the realization of novel physical and chemical properties in borophene due to the structure–property correspondence. In this review, we summarize the recent research progress in the synthesis of monolayer (ML) borophene on various substrates, including Ag(1 1 1), Ag(1 1 0), Ag(1 0 0), Cu(1 1 1), Cu(1 0 0), Au(1 1 1), Al(1 1 1) and Ir(1 1 1), in which the polymorphism of borophene is present. Moreover, we introduce the realization of bilayer (BL) borophene on Ag(1 1 1), Cu(1 1 1) and Ru(0 0 0 1) surfaces, which possess richer electronic properties, including better thermal stability and oxidation resistance. Then, the stabilization mechanism of polymorphic borophene on their substrates is discussed. In addition, experimental investigations on the unique physical properties of borophene are also introduced, including metallicity, topology, superconductivity, optical and mechanical properties. Finally, we present an outlook on the challenges and prospects for the synthesis and potential applications of borophene.     

非平衡溶剂化新理论在有机染料电子光谱中的应用

总结了非平衡溶剂化新理论和在量子化学软件Q-Chem中基于含时密度泛函理论(TD-DFT)实现溶剂效应下计算电子吸收和发射光谱的数值解方法.采用该方法计算了染料敏化太阳能电池(DSSCs)中三苯胺型有机染料■在真空和乙腈溶剂中的电子结构与光谱性质,研究发现,π共轭桥上碳碳双键的个数和溶剂效应会促进光电转换.     

中空碳纳米球的制备及VOCs吸附性能

首先, 在碱性条件下, 不使用表面活性剂, 采用St?ber小球法以正硅酸四乙酯(TEOS)和正硅酸四丙酯(TPOS)为硅源, 生成初级氧化硅球形颗粒; 然后, 使酚醛树脂(间苯二酚和甲醛)与球形氧化硅的羟基共缩合形成酚醛树脂-氧化硅复合材料; 最后, 经高温碳化和酸蚀获得了空心碳纳米球(HCNSs). 通过调节TEOS/TPOS的摩尔比获得了一系列具有良好的单分散性且粒径、 壁厚可调节的HCNSs, 其粒径和壁厚分别在280~430 nm和15~63 nm的范围内. 仅以TPOS为硅源时合成的HCNS-0/4具有较大的粒径(426 nm)和壁厚(63 nm)、 较高的比表面积(1216 m²/g)和孔容(0.508 cm³/g), 并且具有较大的挥发性有机化合物(VOCs)吸附性能, 其正己烷、 甲苯和油气的静态吸附容量分别为2.02, 1.42和0.926 g/g, 正己烷和甲苯的动态吸附容量分别为2.01 g/g和1.37 g/g, 均远高于商业化活性炭.     

质子水合结构的振动态密度分析

使用基于多态经验价键模型的分子动力学模拟, 对水溶液中质子的水合结构及其在质子传递过程中的动力学过程进行了研究. 在价键模型的方法下, 质子的水合结构主要以H₉O₄⁺(Eigen)以及过渡态的H₅O₂⁺(Zundel)结构形态存在, 且在这两种结构中以Eigen的形态表现明显. 通过对质子传递过程中不同水合结构的态密度频谱分析, 发现一个在2000~3000 cm^-1范围内的明显连续的宽吸收谱带, 主要归因于Eigen结构的贡献, 这些特征峰的出现与水合氢离子第一溶剂化层内的强氢键作用密切相关. 对于Zundel的结构, 在1760 cm^-1处出现一个较为明显的肩峰, 归属为质子传递模式的特征振动. 通过对质子水合结构态密度频谱的分析, 可望增强对于稀酸溶液红外光谱中的连续宽吸收带以及质子传递的微观动力学过程的理解.     

高通量虚拟筛选CDK2/Cyclin A2靶点抑制剂

CDK2/Cyclin A2复合蛋白的异常表达与乳腺癌、 口腔癌、 食管鳞状细胞癌的发生密切相关. CDK2/ Cyclin A2复合蛋白的活性位点不同于CDK2单体. 至今临床上尚无靶向此复合蛋白的药物分子. 针对CDK2/Cyclin A2复合蛋白, 以实验报道的10个抑制剂分子构建药效团模型, 通过药物体外药代动力学（ADME）、 Docking、 聚类分析、 毒性预测, 从DrugBank, ChEMBL和TCM@Taiwan 3个数据库约90万组数据中进行高通量虚拟筛选, 进一步进行MD模拟、 MM/PBSA结合自由能计算、 能量分解和平均非共价作用(aNCI)分析, 筛选出3个抑制效果优于阳性实验药Roscovitine的先导分子: DrugBank-2004, DrugBank-583和ChEMBL-7122. 与CDK2蛋白相比, CDK2/Cyclin A2复合蛋白结合位点空间变大, 先导分子与Lys33, Asp86, Lys129和Asp145残基之间的排斥作用有所降低, 导致结合自由能更大.