Li原子掺杂C28单分子器件的热自旋输运性质

利用第一性原理对Li原子掺杂C₂₈的分子器件的热自旋输运性质进行了计算。在不同的温度场下,上下自旋分别为Li原子掺杂C₂₈的分子器件中的空穴和电子提供了输运通道,在MJ₁和MJ₃分子器件中,热自旋电流随着温度增加而增大,但在MJ₂分子器件中,热自旋电流先增大再减小。三种分子器件都出现了自旋塞贝克效应,MJ₂还出现了负微分电阻现象,利用费米-狄拉克分布和自旋输运谱对其物理机理进行了解释。根据Li掺杂C₂₈的单分子器件的热自旋输运性质,可设计新的自旋纳米器件。     

Electronic transport study of PbSe pellets prepared from self-assembled 2D-PbSe nanostructures

This work presents a study of the electronic transport properties of PbSe pellets fabricated starting of PbSe nanostructures that exhibited a flake-like 2D morphology, which were synthesized by the co-precipitation method. Seebeck coefficient measurements revealed that the PbSe sample displays n-type conductivity, a maximum Seebeck coefficient of −512.6 μV/K around 380 K, and that the carriers scattering is dominated by acoustic and optical phonons. The Fermi level dependence on the temperature and the band gap energy are also reported. Interestingly, size-dependent confinement effects due probably to the reminiscent PbSe 2D character could be evidenced.     

Correlating conductivity and Seebeck coefficient to doping within crystalline and amorphous domains in poly(3-(methoxyethoxyethoxy)thiophene)

Molecular doping of conjugated polymers (CPs) plays a vital role in optimizing organic electronic and energy applications. For the case of organic thermoelectrics, it is commonly believed that doping CPs with a strong dopant could result in higher conductivity (σ) and thus better power factor (PF). Herein, by investigating thermoelectric performance of a polar side-chain bearing CP, poly(3-(methoxyethoxyethoxy)thiophene) (P3MEET), vapor doped with fluorinated-derivative of tetracyanoquinodimethane FnTCNQ (n = 1, 2, 4), we show that using strong dopants can in fact have detrimental effects on the thermoelectric performance of CPs. Despite possessing higher electron affinity, doping P3MEET with F4TCNQ only results in a σ (27.0 S/cm) comparable to samples doped with other two weaker dopants F2TCNQ and F1TCNQ (26.4 and 20.1 S/cm). Interestingly, F4TCNQ-doped samples display a marked reduction in the Seebeck coefficient (α) compared to F1TCNQ- and F2TCNQ-doped samples from 42 to 13 μV/K, leading to an undesirable suppression of the PF. Structural characterizations coupled with Kang-Snyder modeling of the α–σ relation show that the reduction of α in F4TCNQ-doped P3MEET samples originates from the generation of low mobility carrier within P3MEET's amorphous domain. Our results demonstrate that factors such as dopant distribution and doping efficiency within the crystalline and amorphous domains of CPs should play a crucial role in advancing rational design for organic thermoelectrics.     

泽贝克/佩尔捷效应演示实验

应用半导体温差发电模块制作了半导体温差发电演示装置,该装置可直观演示泽贝克效应及佩尔捷效应,同时还具有测量泽贝克系数等功能.     

The observation of inherent spin Seebeck effect in Rh/YIG hybrid structure

Rhodium (Rh) is a 4d metal possessing a large spin orbit coupling strength and spin-Hall conductivity with a very small magnetic susceptibility, implying an insignificant magnetic proximity effect (MPE). We report here the observation of longitudinal spin Seebeck effect (LSSE) using Rh as a normal metal. A Rh film was sputtered on nanometer thick YIG films of highly crystalline nature and extremely low magnetic damping to obtain Rh/YIG hybrid structure. A clear thermal voltage V_th (SSE voltage) was obtained when a temperature gradient was applied on the Rh/YIG hybrid. The Rh film showed a very weak anomalous Hall resistance and the magneto-resistive testing clearly ruled out the magnetization of the Rh films via MPE. The anisotropic magnetoresistance (AMR) revealed a clear spin hall magnetoresistance (SMR) signal in Rh film implying a purely intrinsic spin current generation, free from any parasitic magnetic effects. The work can open a new window in the study of pure and uncontaminated spin current, generated in ferromagnetic insulators, using Rh as spin current detector.     

硅锗合金Seebeck系数影响因素的研究

作为一种洁净能源,硅锗合金的热电转换性能的研究越来越受到人们的重视.本文重点研究了不同Ge浓度的硅锗合金以及Si、Ge单晶在300～1100K温度范围内,Seebeck系数随温度的变化.并对组分相同导电类型不同、晶向不同以及结晶状态不同的样品的Seebeck系数进行了比较.在研究温度区间,Seebeck系数的绝对值大小一般在200～600μV/K之间,随温度不同连续变化.通过对比发现SiGe合金的Seebeck系数大小不仅与Ge的浓度和温度有关,其他因素对其绝对值也有影响,其中晶向最为明显,表现出了明显的各向异性.此外,材料本身的电阻率除了作为一个热电参数影响最优值外,其大小还对Seebeck系数的绝对值有影响,即掺杂济浓度对Seebeck系数的影响.