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1.
We report on the growth properties of InAs, InP and GaAs nanowires (NWs) on different lattice mismatched substrates, in particular, on Si(111), during Au‐assisted molecular beam epitaxy (MBE). We show that the critical diameter for the epitaxial growth of dislocation‐free III–V NWs decreases as the lattice mismatch increases and equals 24 nm for InAs NWs on Si(111), 39 nm for InP NWs on Si(111), 44 nm for InAs NWs on GaAs(111)B, and 110 nm for GaAs NWs on Si(111). When the diameters exceed these critical values, the NWs are dislocated or do not grow at all. The corresponding temperature domains for NW growth extend from 320 °C to 340 °C for InAs NWs on Si(111), 330 °C to 360 °C for InP NWs on Si(111), 370 °C to 420 °C for InAs NWs on GaAs(111)B and 380 °C to 540 °C for GaAs NWs on Si(111). Experimental values for critical diameters are compared to the previous findings and are discussed within the frame of a theoretical model. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   
2.
Optical properties of hexagonal and cubic ZnS nanoribbons are studied by using valence electron energy loss spectroscopy (VEELS) and ab initio band structure calculations. The peaks in VEELS are assigned to interband transitions by comparing the interband transition strengths with the calculated densities of states. The optical properties are deduced from the experimental VEELS, and the theoretical calculations give consistent results. This combination of experimental and theoretical approaches provides a comprehensive understanding of the optical properties of polytype ZnS.  相似文献   
3.
We present theoretically a novel intrinsic optical bistability (IOB) in the Tm^3+ /Yb^3+ codoped system with a photon avalanche mechanism. Numerical simulations based on the rate equation model demonstrate distinct 10B hysteresis and critical slowing dynamics around the avalanche thresholds. Such an 10B characteristic in Tm^3+ /Yb^3+ eodoped crystal has potential applications in solid-state bistable optical displays and luminescence switchers in visible-infrared spectra.  相似文献   
4.
Energy transfer has been studied from Er3+ to Eu3+ ions on excitation with NIR photons (796 and 980 nm) with and without Yb3+ ions. It is found that in one case the presence of Yb3+ enhances the fluorescence yield (980 nm excitation) whereas in the other case it quenches (796 nm excitation). Energy transfer from Er3+ ion's levels 4S3/2 and 2H11/2 is verified by decay curve analysis in both the cases. The nature of interaction between the donor (Er) and the acceptor (Eu) ions is found to be dipole-dipole. The energy transfer parameters viz. transfer probability, critical distance etc. have been calculated.  相似文献   
5.
β-Ga2O3 nanostructures including nanowires, nanoribbons and nanosheets were synthesized via thermal annealing of gold coated GaAs substrates in N2 ambient. GaAs substrates with different dopants were taken as the starting material to study the effect of doping on the growth and photoluminescence properties of β-Ga2O3 nanostructures. The nanostructures were investigated by Grazing Incident X-ray Diffraction, Scanning Electron Microscopy, Transmission Electron Microscopy, Energy Dispersive X-ray Spectroscopy, room temperature photoluminescence and optical absorbance. The selected area electron diffraction and High resolution-TEM observations suggest that both nanowires and nanobelts are single crystalline. Different growth directions were observed for nanowires and nanoribbons, indicating the different growth patterns of these nanostructures. The PL spectra of β-Ga2O3 nanostructures exhibit a strong UV-blue emission band centered at 410 nm, 415 nm and 450 nm for differently doped GaAs substrates respectively. A weak red luminescence peak at 710 nm was also observed in all the samples. The optical absorbance spectrum showed intense absorption features in the UV spectral region. The growth and luminescence mechanism in β-Ga2O3 nanostructures are also discussed.  相似文献   
6.
The study is dedicated to some aspects of the controlled heteroepitaxial growth of nanoscaled ZnO structures and an investigation of their general and dimension mediated properties. ZnO nanostructures were synthesized by optimized MOCVD process via two growth approaches: (i) catalyst free self-organized growth of ZnO on Si substrates and (ii) ZnO heteroepitaxy on p-type hexagonal 4H-SiC substrates. The SiC substrate was prepared by sublimation epitaxy and served as a template for the ZnO epitaxial growth. The epitaxial growth of n-ZnO on p-SiC resulted in a regular matrix of well-faceted hexagonally shaped ZnO single crystals. The achievement of ZnO integration with Si encompasses controlled growth of vertically oriented nanosized ZnO pillars. The grown structures were characterized by transmission electron microscopy and microphotoluminescence. Low concentration of native defects due to a stoichiometry balance, advanced optical emission, (excitonic type near-band-edge emission and negligible defect related luminescence) and continuous interfaces (epitaxial relationship ZnO[0 0 0 1]/SiC[0 0 0 1]) are evidenced. The ZnO nanopillars were further probed as field emitters: the grown structures exhibits advanced field emission properties, which are explained in term of dimensionality and spatial uniformity of the nanopillars. The present results contribute to understanding and resolving growth and device related issues of ZnO as a functional nanostructured material.  相似文献   
7.
The Monte Carlo simulation method was used to model thermal desorption of a pair of enantiomers from a solid surface with a chiral periodic pattern of active sites. The main objective of the study was to determine the optimal number of the active sites and their spatial distribution within the unit cell of the surface to achieve the most efficient separation of the enantiomers. For that purpose we tested the series of chiral patterns which were found previously for the equilibrium adsorption. Temperature programmed desorption spectra were calculated using a square lattice of adsorption sites in which the active sites were distributed spatially according to the candidate patterns. Additionally, influence of relaxation of the adsorbed layer on the relative shift of the TPD peaks of the enantiomers was assessed and the key factors affecting the chiral separation were identified.  相似文献   
8.
4 )2 single crystals doped with Er3+ have been grown by the flux top-seeded-solution growth method. The crystallographic structure of the lattice has been refined, being the lattice constants a=10.652(4), b=10.374(6), c=7.582(2) Å, β=130.80(2)°. The refractive index dispersion of the host has been measured in the 350–1500 nm range. The optical absorption and photoluminescence properties of Er3+ have been characterised in the 5–300 K temperature range. At 5 K, the absorption and emission bands show the (2J+1)/2 multiplet splittings expected for the C2 symmetry site of Er in the Gd site. The energy positions and halfwidths of the 72 sublevels observed have been tabulated as well as the cross sections of the different multiplets. Six emission band sets have been observed under excitation of the 4F7/2 multiplet. The Judd–Ofelt (JO) parameters of Er3+ in KGW have been calculated: Ω2=8.90×10-20 cm2, Ω4=0.96×10-20 cm2, Ω6=0.82×10-20 cm2. Lifetimes of the 4S3/2, 4F9/2, and 4I11/2 multiplets have been measured in the 5–300 K range of temperature and compared with those calculated from the JO theory. A reduction of the 4S3/2 and 4I11/2 measured lifetimes with increasing erbium concentration has been observed, moreover the presence of multiphonon non-radiative processes is inferred from the temperature dependence of the lifetimes. Received: 15 December 1997/Revised version: 10 July 1998  相似文献   
9.
This paper describes the use of ultrasonic guided waves for identifying the mass loading due to underwater limpet mines on ship hulls. The Dynamic Wavelet Fingerprint Technique (DFWT) is used to render the guided wave mode information in two-dimensional binary images because the waveform features of interest are too subtle to identify in time domain. The use of wavelets allows both time and scale features from the original signals to be retained, and image processing can be used to automatically extract features that correspond to the arrival times of the guided wave modes. For further understanding of how the guided wave modes propagate through the real structures, a parallel processing, 3D elastic wave simulation is developed using the finite integration technique (EFIT). This full field, technique models situations that are too complex for analytical solutions, such as built up 3D structures. The simulations have produced informative visualizations of the guided wave modes in the structures as well as mimicking directly the output from sensors placed in the simulation space for direct comparison to experiments. Results from both drydock and in-water experiments with dummy mines are also shown.  相似文献   
10.
Dynamics of the Yb3+ to Er3+ energy transfer in LiNbO3   总被引:1,自引:0,他引:1  
The energy transfer dynamics between Yb3+ and Er3+ ions in lithium niobate is investigated after ytterbium-pulsed excitation at 920 nm. The sensitisation of the LiNbO3:Er3+ system with Yb3+ ions does not modify the lifetime of the 4I13/2 erbium level (1.5-μm emission), whereas it induces a marked, concentration-dependent change in the lifetime of the 2F5/2 (Yb3+) and 4S3/2 (Er3+) multiplets (1060-nm and 550-nm emissions, respectively). The results are analysed by using the rate-equation formalism and cross-relaxation model for the energy transfer. Received: 15 October 1998 / Revised version: 24 November 1998 / Published online: 24 February 1999  相似文献   
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