Anharmonic effects in large-amplitude vibrations of metal clusters

Two types of extreme collective motion, large-amplitude many-phonon vibration of the ionic core and rotation of the cluster with high angular momenta, are considered. The interplay between vibration and collective motion towards fission is discussed. A new mechanism of formation and rupture of the neck is proposed which is based on the Franck-Condon principle, and accounts for the interplay between vibration and fission. Under rotation, the change of the shape of the cluster and a phase transition from axially symmetric to triaxial ellipsoid are predicted. For studying the effects, vibrational motion can be induced by laser radiation. Rotational motion may arise in collisions of clusters. Received 26 April 2001 and Received in final form 15 October 2001     

Photocarrier injection and the I-V characteristics of La0.8Sr0.2MnO3/SrTiO3:Nb heterojunctions

Oxide heterojunctions made of p-type La_0.8Sr_0.2MnO₃ (LSMO) and niobium-doped n-type SrTiO₃ (STO:Nb) have been fabricated by the pulsed laser deposition (PLD) technique and characterized under UV light irradiation by measuring the current-voltage, photovoltaic properties and the junction capacitance. It is shown that the heterojunctions work as an efficient UV photodiode, in which photogenerated holes in the STO:Nb substrate are injected to the LSMO film. The maximum surface hole density Q/e and external quantum efficiency γ are estimated to be 8.3×10¹² cm⁻² and 11% at room temperature, respectively. They are improved significantly in a p-i-n junction of LSMO/STO/STO:Nb, where Q/e and γ are 3.0×10¹³ cm⁻² and 27%, respectively.     

Current-temperature measurements of a SBD evaporated onto inductively coupled plasma cleaned germanium

Inductively coupled plasma (ICP) etching has been used primarily on compound semiconductors. There are however compelling reasons to study the effects of ICP etching on Ge. Pd Schottky barrier diodes (SBDs) were resistively evaporated onto Ge (1 1 1) that was ICP etched at a rate of 60 Å per minute for three or ten minute intervals. Although plasma cleaning is known to introduce defects that were observed with DLTS, the diodes exhibited excellent current-voltage characteristics when cooled down to 80 K. Current-temperature (IT) scans that were recorded from 20 K up to 300 K after cooling under reverse bias showed no effect of recombination/generation (RG). On the other hand, IT scans that were recorded after cooling under zero or forward bias clearly exhibited RG effects in the 100-240 K temperature range. This effect was found to be completely reversible. In addition, ICP etching leads to superior devices when compared to devices manufactured by RF sputter deposition.     

Temperature-dependent optical absorption measurements and Schottky contact behavior in layered semiconductor n-type InSe(:Sn)

The layered n-InSe(:Sn) single crystal samples have been cleaved from a large crystal ingot grown from non-stoichiometric melt by the Bridgman-Stockbarger method. It has been made the absorption measurements of these samples without Schottky contact under electric fields of 0.0 and 6000 V cm⁻¹. The band gap energy value of the InSe:Sn has been calculated as 1.36 ± 0.01 eV (at 10 K) and 1.28 ± 0.01 eV (at 300 K) under zero electrical field, and 1.31 ± 0.01 eV (at 10 K) and 1.26 ± 0.01 eV (at 300 K) under 6000 Vcm⁻¹. The current-voltage (I-V) characteristics of Au-Ge/InSe(:Sn)/In Schottky diodes have been measured in the temperature range 80-320 K with a temperature step of 20 K. An experimental barrier height (BH) Φ_ap value of about 0.70 ± 0.01 eV was obtained for the Au-Ge/InSe(:Sn)/In Schottky diode at the room temperature (300 K). An abnormal decrease in the experimental BH Φ_b and an increase in the ideality factor n with a decrease in temperature have been explained by the barrier inhomogeneities at the metal-semiconductor interface. From the temperature-dependent I-V characteristics of the Au-Ge/InSe(:Sn)/In contact, that is, and A^* as 0.94 ± 0.02 and 0.58 ± 0.02 eV, and 27 ± 2 and 21 ± 1 (A/cm² K²), respectively, have been calculated from a modified versus 1/T plot for the two temperature regions. The Richardson constant values are about two times larger than the known value of 14.4 (A/cm² K²) known for n-type InSe. Moreover, in the temperature range 80-320 K, we have also discussed whether or not the current through the junction has been connected with TFE.     

Use of ultrasonics in shear layer cavitation control

In this paper we report results from some investigations on the use of ultrasonics in controlling hydrodynamic cavitation in the shear layer downstream of a sudden expansion. Control of this type of cavitation has been achieved by modulating the local pressure that was experienced by a nucleus present in the shear layer. This modulation was made possible by using a piezoelectric device, termed as Ultrasonic Pressure Modulator (UPM). The performance of UPM has been studied at different dissolved gas concentrations with electrolysis bubbles as nuclei. Control of cavitation due to natural nuclei has also been attempted. Efficiency of UPM, in reducing cavitation, was seen to be dependent on the driving frequency employed. Experimental and numerical studies have been conducted to bring out the physics behind this approach of cavitation control. Different measures of cavitation control have been identified and some possible applications of this method have also been outlined.     

Mesoscopic and macroscopic dipole clusters: Structure and phase transitions

A two dimensional (2D) classical system of dipole particles confined by a quadratic potential is studied. This system can be used as a model for rare electrons in semiconductor structures near a metal electrode, indirect excitons in coupled quantum dots etc. For clusters of N ≤ 80 particles ground state configurations and appropriate eigenfrequencies and eigenvectors for the normal modes are found. Monte-Carlo and molecular dynamic methods are used to study the order-disorder transition (the “melting” of clusters). In mesoscopic clusters (N < 37) there is a hierarchy of transitions: at lower temperatures an intershell orientational disordering of pairs of shells takes place; at higher temperatures the intershell diffusion sets in and the shell structure disappears. In “macroscopic” clusters (N > 37) an orientational “melting” of only the outer shell is possible. The most stable clusters (having both maximal lowest nonzero eigenfrequencies and maximal temperatures of total melting) are those of completed crystal shells which are concentric groups of nodes of 2D hexagonal lattice with a number of nodes placed in the center of them. The picture of disordering in clusters is compared with that in an infinite 2D dipole system. The study of the radial diffusion constant, the structure factor, the local minima distribution and other quantities shows that the melting temperature is a nonmonotonic function of the number of particles in the system. The dynamical equilibrium between “solid-like” and “orientationally disordered” forms of clusters is considered.     

The conductance and capacitance-frequency characteristics of Au/pyronine-B/p-type Si/Al contacts

The rectifying junction characteristics of the organic compound pyronine-B (PYR-B) film on a p-type Si substrate have been studied. The PYR-B has been evaporated onto the top of p-Si surface. The barrier height and ideality factor values of 0.67 ± 0.02 eV and 2.02 ± 0.03 for this structure have been obtained from the forward bias current-voltage (I-V) characteristics. The energy distribution of the interface states and their relaxation time have been determined from the forward bias capacitance-frequency and conductance-frequency characteristics in the energy range of ((0.42 ± 0.02) − E_v)-((0.66 ± 0.02) − E_v) eV. The interface state density values ranges from (4.21 ± 0.14) × 10¹³ to (3.82 ± 0.24) × 10¹³ cm⁻² eV⁻¹. Furthermore, the relaxation time ranges from (1.65 ± 0.23) × 10⁻⁵ to (8.12 ± 0.21) × 10⁻⁴ s and shows an exponential rise with bias from the top of the valance band towards the midgap.     

Melting Transition of Small Aluminium Clusters Al11-20

Heat capacities of small aluminium clusters A111-20 are investigated using MD simulation with empirical many- body Gupta potential. The heat capacities of some clusters A111, A112, A113 and A119 show well-defined peaks while the heat capacities of Alls-ls indicate a gradual melting transition. The spectra of isomers obtained by quenches along the MD trajectory give good interpretation for those results.     

The role of energy density and acoustic cavitation in shock wave lithotripsy

Today a high percentage of urinary stones are successfully treated by extracorporeal shockwave lithotripsy (SWL); however, misconceptions regarding fragmentation mechanisms, as well as treatment parameters like dose, applied energy and focal area are still common. A main stone comminution mechanism during SWL is acoustic cavitation. The objective of this study was to analyze the influence of cavitation and energy density on stone fragmentation. A research lithotripter was used to expose a large set of artificial kidney stones to shock waves varying different parameters. Hundreds of pressure records were used to calculate the energy density of the lithotripter at different settings. Results indicate that energy density is a crucial parameter and that better SWL treatment outcomes could be obtained placing the calculus at a prefocal position.