CrO2 (1 0 0) and TiO2 (1 0 0) film heteroepitaxy on a BaF2 (1 1 1)/Si (1 0 0) substrate

Multi-domained heteroepitaxial rutile-phase TiO₂ (1 0 0)-oriented films were grown on Si (1 0 0) substrates by using a 30-nm-thick BaF₂ (1 1 1) buffer layer at the TiO₂–Si interface. The 50 nm TiO₂ films were grown by electron cyclotron resonance oxygen plasma-assisted electron beam evaporation of a titanium source, and the growth temperature was varied from 300 to 600 °C. At an optimal temperature of 500 °C, X-ray diffraction measurements show that rutile phase TiO₂ films are produced. Pole figure analysis indicates that the TiO₂ layer follows the symmetry of the BaF₂ surface mesh, and consists of six (1 0 0)-oriented domains separated by 30° in-plane rotations about the TiO₂ [1 0 0] axis. The in-plane alignment between the TiO₂ and BaF₂ films is oriented as [0 0 1] TiO₂ || BaF₂ or [0 0 1] TiO₂ || BaF₂ . Rocking curve and STM analyses suggest that the TiO₂ films are more finely grained than the BaF₂ film. STM imaging also reveals that the TiO₂ surface has morphological features consistent with the BaF₂ surface mesh symmetry. One of the optimally grown TiO₂ (1 0 0) films was used to template a CrO₂ (1 0 0) film which was grown via chemical vapor deposition. Point contact Andreev reflection measurements indicate that the CrO₂ film was approximately 70% spin polarized.     

Rare earth photoionization study by the resonant microwave cavity technique

Photoconductivity spectra of rare earth-doped insulating materials are measured using the resonant microwave cavity method. This technique is based on the detection of the cavity Q-factor changes induced by irradiation of the sample (inserted in the cavity) by a pulsed tunable laser. Results obtained with Lu₂(SiO₄)O:Ce³⁺ and BaF₂:Eu²⁺ are presented and discussed. Photoionization thresholds at 400 nm (3.1 eV) and 310 nm (4.0 eV) are measured for Lu₂(SiO₄)O:Ce³⁺ and BaF₂:Eu²⁺, respectively.     

BaF2中Vk心的ESR谱分析

电子自旋共振（ＥＳＲ）实验间接表明，γ射线辐照能在室温下在ＢａＦ２微晶中产生Ｆｒｅｎｋｅｌ激子这样的元激发，此元激发受热在１５０℃以下消失。γ射线辐照使ＢａＦ２微晶中Ｆ－离子上的２Ｐ电子跃迁到外层轨道，并与２Ｐ轨道的空穴形成紧束缚的电子－空穴对——Ｆｒｅｎｋｅｌ激子。激子中的电子受热脱离Ｆ原子，这种晶格上的Ｆ０是ＥＳＲ可探测的顺磁色心点缺陷——Ｖｋ心。受γ射线辐照的ＢａＦ２微晶中含有Ｆｒｅｎｋｅｌ激子，受热时Ｆｒｅｎｋｅｌ激子湮灭。Ｖｋ心增多的现象，表现为随温度增高Ｖｋ心的ＥＳＲ信号增强的反常现象。     

Complex copper(II) fluorides. XV. The Ternary System BaF2?CuF2?ScF3

The liquid-solid phase diagram of the binary system BaF₂? ScF₃ is established by D.T.A. and radiocrystallography. Three fluorides are disclosed: Ba₃Sc₂F₁₂, Ba₅Sc₃F₁₉ and a cubic high temperature phase Ba_1?xSc_xF_2+x (x = 0.17), the structure of which derives from that of BaF₂. A solid solution between BaF₂ and ScF₃ is also evidenced at high temperature. The ternary system BaF₂? CuF₂? ScF₃ is investigated by radiocrystallography and an isothermal section at 670°C is given. It shows the existence of four phases: a complex quaternary fluoride Ba₁₀Cu₁₂ScF₄₇, two “polytypic” phases the structure of which derives from that of BaCuF₄ and a tetragonal solid solution Ba₅Sc_3?xCu_xF_19?x with 0 ≤ x ≤ 1.     

Saturated absorption spectroscopy of buffer-gas-cooled Barium monofluoride molecules

We report an experimental investigation on the Doppler-free saturated absorption spectroscopy of buffer-gas-cooled Barium monofluoride (BaF) molecules in a 4 K cryogenic cell. The obtained spectra with a resolution of 19 MHz, much smaller than previously observed in absorption spectroscopy, clearly resolve the hyperfine transitions. Moreover, we use these high-resolution spectra to fit the hyperfine splittings of excited A(v = 0) state and find the hyperfine splitting of the laser-cooling-relevant A²Π_1/2(v = 0, J = 1/2,+) state is about 18 MHz, much higher than the previous theoretically predicted value. This provides important missing information for laser cooling of BaF molecules.     

高压下BaF2光学性质的模拟计算

探寻新的冲击窗口材料是高压科学领域中的一个重要课题.为此,在100 GPa范围内,通过第一性原理方法计算了BaF₂晶体的吸收谱以及在532 nm处的折射率.结果表明:1)压力和结构相变因素不会引起BaF₂晶体在可见光区域出现光吸收;氟和钡空位点缺陷的存在将使得BaF₂吸收谱的吸收边红移,但这些红移行为不会导致该材料在可见光区域内出现光吸收的现象,由此可以初步推测,BaF₂晶体有成为冲击窗口材料的可能. 2) BaF₂的折射率在其三个结构相区都随压力的增大而增大,并且BaF₂的高压相变也使得其折射率升高;钡空位点缺陷的存在将导致其折射率减小,而氟空位点缺陷却引起其折射率增加.     

BaF2高压相变行为的第一性原理研究

通过理论计算研究了BaF₂在高压下的晶体结构及物理性质.结果表明,在3.5和18.3 GPa,BaF₂依次经历了Fm■m-Pnma-P6₃/mmc两次结构相变,相变过程伴随着体积的塌缩,均为一级相变.约15 GP时,Pnma相晶轴压缩性出现异常,表现为随压强增大,晶轴b_o轻微增加,a_o略微减小.对其电子态密度进行分析发现,在16 GPa以后,由于F1原子的p_y+p_z与p_x轨道电子离域,导致其带隙随压强增加而降低.在约20 GPa时,Pnma相完全转变为P6₃/mmc相,相变完成.对BaF₂的拉曼峰位随压强变化进行了计算,为其高压拉曼光谱行为提供了相应的理论依据.计算了P6₃/mmc相在不同压强下的声子色散曲线,揭示了其卸压过程中的滞后机制,计算结果还预测该物相至少可以稳定到80 GPa.     

Analysis of the magnetic structure of the manganese oxychalcogenides R2Mn2Se2O (R=LaO,BaF) by density functional calculations

We examined the magnetic structures of R₂Mn₂Se₂O (R=LaO, BaF) by evaluating the spin exchange interactions on the basis of density functional theory (DFT) calculations, and compared how they differ from that of the Fe analog (BaF)₂Fe₂Se₂O. In R₂Mn₂Se₂O (R=LaO, BaF), the two-dimensional antiferromagnetic square lattice defined by J₁ is spin-frustrated, and the exchange J₁ is stronger for (LaO)₂Mn₂Se₂O than for (BaF)₂Mn₂Se₂O by a factor of 1.5 explaining why the magnetic susceptibility maximum occurs at a higher temperature for (LaO)₂Mn₂Se₂O than for (BaF)₂Mn₂Se₂O (360 vs. 210 K). We identified two probable reasons why the specific heat anomaly at the long-range antiferromagnetic ordering temperature T_N is significantly weaker for R₂Mn₂Se₂O than for (BaF)₂Fe₂Se₂O.     

闪烁晶体的发光研究进展

概述了近年来闪烁体发光研究的进展,主要介绍用于未来高能物理实验的新型闪烁体发光机理研究,选取我们在研BaF₂,BaF₂:RE,CeF₃以及PbWO₄中的一些新进展。重点谈及三点:(1)在BaF₂的“价带^→芯带”跃迁发光研究基础上进行稀土(Gd³⁺-Eu³⁺)掺杂时观察到的量子剪裁以及对多光子发光的新思考;(2)CeF₃晶体发光的级联能量传递中,Ce³⁺(290nm发射带)与缺陷发光中心(340nm发射带)间能量传递及其传递效率的温度依赖;(3)PbWO₄晶体的发光中心研究中,提出以“WO₄^-2+O_i”绿光中心替代“WO³+F”中心观点的依据。同时也简介了医用闪烁体的最新进展。     

氟化钡晶体真空紫外透过率温度特性研究

真空紫外波段存在几个可用于研究电离层物理现象的重要光谱,其中135.6nm的夜气辉是重要的探测谱段,通过对该波段辐射强度的探测可反演出电离层电子密度(TEC)及F2层峰值电子密度。夜气辉发射线中,130.4nm的发射线与135.6nm光谱间隔很近,发射强度与135.6nm强度相当,因此,要实现对135.6nm夜气辉探测需要抑制130.4nm气辉辐射。分别对0.5和1mm厚的真空紫外级别的氟化钡晶体窗口透过率随温度变化特性进行研究,结果表明,氟化钡晶体的短波截止波长随温度的升高向长波方向偏移,在一定温度范围内,氟化钡晶体可以很好地抑制130.4nm辐射,并在135.6nm波段有较高的透过率。与国外相关文献所报道的通过加热SrF2晶体来抑制130.4nm辐射的方式相比,利用氟化钡晶体作为短波截止滤光片,可以将130.4nm的杂散光完全抑制,同时可以降低仪器功耗,对于电离层光学遥感探测有着重要的意义。