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对于掺铁铌酸锂晶体中不同全息记录配置下的磁光折变效应做了比较系统的理论分析,给出了铌酸锂晶体所有的磁光生伏打非零张量元. 详细计算并给出了不同全息纪录配置下的所有体光生伏打、磁光生伏打电流的解析形式. 理论结果表明,由于磁光生伏打效应引起了光激发电流的变化,所以对于每种配置全息光栅的衍射效率都会受到外加磁场的影响;对于不同的全息记录配置,磁场对铌酸锂晶体光折变非线性性质的影响也不同.讨论了一种确定特定张量元的方法.
关键词:
磁光生伏打
磁光折变效应
光生伏打 相似文献
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A series of Al=-(Alq3)l-x granular films is prepared on Si wafer with native oxide layer using co-evaporation technique. Large lateral photovoltaic effect (LPE) is observed, with an optimal LPV sensitivity of 75 mV/mm in x=0.35 sample. The dependence of LPE on temperature and A1 composition is investigated, and the possible mechanism is discussed. 相似文献
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Temperature-dependent rectifying and photovoltaic characteristics of an oxygen-deficient Bi_2Sr_2Co_2O_y/Si heterojunction
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A Bi2Sr2Co2Oy/Si heterojunction is obtained by growing a layer of p-type oxygen-deficient Bi2Sr2Co2Oy film on a commercial n-type silicon wafer by pulsed laser deposition. Its rectifying and photovoltaic properties are studied in a wide temperature range from 20 K to 300 K. The transport mechanism under the forward bias can be attributed to a trap- filled space-charge-limited current conduction mechanism. Under the irradiation of a 532-nm continuous wave laser, a clear photovoltaic effect is observed and the magnitude ofphotovoltage increases as the temperature decreases, The results demonstrate the potential application of a Bi2SrzCo2Oy-based heterojunction in the photoelectronic devices. 相似文献
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理论分析了背景光辐照在光折变晶体中从自散焦向自聚焦特性转化过程中的作用,得到了R>1是不同类型(Δn<0和Δn>0)晶体中这种转变的条件.实验观察到了铌酸锂晶体中这种转变的现象.并依据Glass常量的光伏打效应表征意义,提出了光伏孤子形成过程中载流子的竞争效应模型.基于此,分析了折射率变化为负的光生伏打晶体在背景光和信号光Glass常量比大于1条件下的载流子竞争效应,得到了与实验现象和已知理论分析相一致的结论.研究表明,背景光引起的载流子竞争效应是影响晶体自散焦向自聚焦特性转换的内在物理本质. 相似文献