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1.
位错是金属塑性变形普遍形式,对其可动位错演化特性与规律探寻并充分利用,将在金属强韧化提升中有着潜在基础前瞻性研究价值.本文基于分子动力学法对金属Al塑性变形的可动位错迁演特性展开研究,洞悉纳米压痕诱导的可动位错与孪晶界面间作用规律,揭示出金属强化微观机制,并分析单层孪晶界高度与多层孪晶界层间距对可动位错迁演、位错密度、硬度、黏着效应的影响.研究发现:高速变形下的金属非晶产生和密排六方结构的出现会协同主导Al基塑性变形,而孪晶界会阻碍可动位错滑移、诱导可动位错缠绕及交滑移产生,在金属承载提升中扮演了位错墙和诱导位错胞形成的微观作用.通过在孪晶界形成钉扎位错和限制位错迁移,在受限域形成高密度局域可动位错,显著强化了金属硬度和韧性,降低了卸载时黏附于探针表面的原子数.结果表明:Al基受载会诱导上表面局部非接触区原子失配斑出现;单层孪晶界高度离基底上表面距离减小时,位错缠绕和交滑移作用越明显,抗黏着效应也随之下降;载荷持续增加会诱驱孪晶界成为位错萌生处与发射源,并伴随塑性环的繁衍增殖.  相似文献   
2.
《Comptes Rendus Mecanique》2019,347(10):677-684
Some implications of the simplest accounting of defects of compatibility in the velocity field on the structure of the classical Navier–Stokes equations are explored, leading to connections between classical elasticity, the elastic theory of defects, plasticity theory, and classical fluid mechanics.  相似文献   
3.
Xing Chen  He Tian  Ze Zhang 《物理化学学报》2020,36(11):1906019-0
It is important to determine the effects of misfit dislocations and other defects on the domain structure, ferroelectricity, conductivity, and other physical properties of ferroelectric thin films to understand their ferroelectric and piezoelectric behaviors. Much attention has been given to ferroelectric PbTiO3/SrTiO3 or PbZr0.2Ti0.8O3/SrTiO3 heterointerfaces, at which improper ferroelectricity, a spin-polarized two-dimensional electron gas, and other physical phenomena have been found. However, those heterointerfaces were all (001) planes, and there has been no experimental studies on the growth of (010) PbTiO3/SrTiO3 heterointerface due to the 6.4% misfit between two materials. In this study, we selected an atomically flat (010) PbTiO3/SrTiO3 heterointerface grown using a two-step hydrothermal method as the research subject, and this is the first experimental report on that interface. Interfacial dislocations can play a significant role in causing dramatic changes in the Curie temperature and polarization distribution near the dislocation cores, especially when the size of a ferroelectric thin film is scaled down to the nanoscale. The results of previous studies on the effects of interfacial dislocations on the physical properties of ferroelectric thin films have been contradictory. Thus, this issue needs to be explored more deeply in the future. This study used aberration corrected scanning transmission electron microscopy (STEM) to study the atomic structure of a (010) PbTiO3/SrTiO3 heterointerface and found periodic misfit dislocations with a Burgers vector of a[001]. The extra planes at the dislocation cores could relieve the misfit strain between the two materials in the [001] direction and thus allowed the growth of such an atomically sharp heterointerface. Moreover, monochromated electron energy-loss spectroscopy with an atomic scale spatial resolution and high energy resolution was used to explore the charge distribution near the periodic misfit dislocation cores. The fine structure of the Ti L edge was quantitatively analyzed by linearly fitting the experimental spectra recorded at various locations near and at the misfit dislocation cores with the Ti3+ and Ti4+ reference spectra. Therefore, the accurate valence change of Ti could be determined, which corresponded to the charge distribution. The probable existence of an aggregation of electrons was found near the a[001] dislocation cores, and the density of the electrons calculated from the valence change was 0.26 electrons per unit cell. Based on an analysis of the fine structure of the oxygen K edge, it could be argued that the electrons aggregating at the dislocation cores came from the oxygen vacancies in the interior regions of the PbTiO3. This aggregation of electrons will probably increase the electron conductivity along the dislocation line. The physics of two-dimensional charge distributions at oxide interfaces have been intensively studied, however, little attention had been given to the one-dimensional charge distribution. Therefore, the results of this study can stimulate research interest in exploring the influence of the interfacial dislocations on the physics of ferroelectric heterointerfaces.  相似文献   
4.
We describe a model based on continuum mechanics that reduces the study of a significant class of problems of discrete dislocation dynamics to questions of the modern theory of continuum plasticity. As applications, we explore the questions of the existence of a Peierls stress in a continuum theory, dislocation annihilation, dislocation dissociation, finite-speed-of-propagation effects of elastic waves vis-a-vis dynamic dislocation fields, supersonic dislocation motion, and short-slip duration in rupture dynamics.  相似文献   
5.
The behaviour of a dislocation pileup with a finite-strength source is investigated in the presence of various stress gradients within a continuum model where a free-dislocation region exists around the source. Expressions for dislocation density and stress field within the pileup are derived for the situation where there are first and second spatial gradients in applied stress. For a pileup configuration under an applied stress, yielding occurs when the force acting on the leading dislocations at the pileup tips reaches the obstacle strength, and at the same time, it is required that the source be at the threshold stress for dislocation production. A numerical methodology is presented to solve the underlying equations that represent the yielding conditions. The yield stress calculated for a pileup configuration is found to depend on stress gradients, obstacle spacing and source/obstacle strengths. It increases with increasing the first stress gradient, yet dependent on the second stress gradient. Furthermore, while the dependency of yield stress on the obstacle spacing intensifies with increasing the first stress gradient, it diminishes with an increase of second stress gradient. Therefore, the second stress gradient, as a newly introduced parameter, can provide a new physical insight into the size-dependent plasticity phenomena at small length scales.  相似文献   
6.
Shaofeng Wang 《哲学杂志》2015,95(33):3768-3784
A fundamental equation is derived for the structure of dislocations in solids. With the interaction potential that can be obtained properly from the first principle, the equation provides a complete basis for a comprehensive study of the dislocation structure. In particular, the full structural feature and related properties of dislocation can be predicted theoretically, which makes it possible to compare precisely the theoretical results and what is produced by experiments or numerical simulations.  相似文献   
7.
There are large classes of materials problems that involve the solutions of stress, displacement, and strain energy of dislocation loops in elastically anisotropic solids, including increasingly detailed investigations of the generation and evolution of irradiation induced defect clusters ranging in sizes from the micro- to meso-scopic length scales. Based on a two-dimensional Fourier transform and Stroh formalism that are ideal for homogeneous and layered anisotropic solids, we have developed robust and computationally efficient methods to calculate the displacement fields for circular and polygonal dislocation loops. Using the homogeneous nature of the Green tensor of order −1, we have shown that the displacement and stress fields of dislocation loops can be obtained by numerical quadrature of a line integral. In addition, it is shown that the sextuple integrals associated with the strain energy of loops can be represented by the product of a pre-factor containing elastic anisotropy effects and a universal term that is singular and equal to that for elastic isotropic case. Furthermore, we have found that the self-energy pre-factor of prismatic loops is identical to the effective modulus of normal contact, and the pre-factor of shear loops differs from the effective indentation modulus in shear by only a few percent. These results provide a convenient method for examining dislocation reaction energetic and efficient procedures for numerical computation of local displacements and stresses of dislocation loops, both of which play integral roles in quantitative defect analyses within combined experimental–theoretical investigations.  相似文献   
8.
光电探测器组件响应度下降会造成光纤陀螺输出异常,响应度下降的主要原因为光纤耦合移位,分析光纤耦合移位的原因并采取有效措施可提高探测器组件的使用可靠性。通过对探测器尾纤出射高斯光斑在探测器管芯端面数学积分,计算出光纤耦合效率系数与光纤耦合间距及光纤偏转角度的关系,计算结果与实际封装探测器组件指标一致。根据计算结果,从光纤移位、探测器管芯移位和管壳形变三个方面分析了耦合移位的影响因素,提出避免探测器使用中发生耦合移位的措施,并通过试验验证了耦合焊接缺陷会造成探测器试验后响应度下降,采取耦合对准控制措施后封装的探测器试验后响应度保持稳定。  相似文献   
9.
For self-interstitial atom (SIA) clusters in various concentrated alloys, one-dimensional (1D) migration is induced by electron irradiation around 300 K. But at elevated temperatures, the 1D migration frequency decreases to less than one-tenth of that around 300 K in iron-based bcc alloys. In this study, we examined mechanisms of 1D migration at elevated temperatures using in situ observation of SUS316L and its model alloys with high-voltage electron microscopy. First, for elevated temperatures, we examined the effects of annealing and short-term electron irradiation of SIA clusters on their subsequent 1D migration. In annealed SUS316L, 1D migration was suppressed and then recovered by prolonged irradiation at 300 K. In high-purity model alloy Fe-18Cr-13Ni, annealing or irradiation had no effect. Addition of carbon or oxygen to the model alloy suppressed 1D migration after annealing. Manganese and silicon did not suppress 1D migration after annealing but after short-term electron irradiation. The suppression was attributable to the pinning of SIA clusters by segregated solute elements, and the recovery was to the dissolution of the segregation by interatomic mixing under electron irradiation. Next, we examined 1D migration of SIA clusters in SUS316L under continuous electron irradiation at elevated temperatures. The 1D migration frequency at 673 K was proportional to the irradiation intensity. It was as high as half of that at 300 K. We proposed that 1D migration is controlled by the competition of two effects: induction of 1D migration by interatomic mixing and suppression by solute segregation.  相似文献   
10.
高英俊  秦河林  周文权  邓芊芊  罗志荣  黄创高 《物理学报》2015,64(10):106105-106105
应用晶体相场方法研究高温应变下的预熔化晶界位错湮没机理. 结果表明, 原预熔化晶界上的位错在应变作用下发生分离运动, 形成新晶界, 即亚晶界. 该过程的实质是生成了亚晶粒; 亚晶界的迁移过程的本质是亚晶粒长大、吞噬旧晶粒的过程; 亚晶界之间的湮没是亚晶粒完全吞噬旧晶粒过程的结束, 体系转变成为单个晶粒结构. 根据原子密度序参数沿xy方向的投影值随应变量的变化特征, 可以揭示出高温应变作用下, 预熔化亚晶界相遇湮没的本质是两对极性相反的偶极子位错对发生二次湮没, 该湮没的微观过程是通过位错连续二次滑移湮没而实现的, 其湮没的速率较低温时的湮没速率要小许多.  相似文献   
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