有序分子膜技术在无机超薄膜制备中的应用

本文以LB技术、自组装技术、SILAR方法为例简要介绍了近年来有序分子膜技术在无机超薄膜构筑方面的应用。并对其今后的发展进行了展望。  

SILAR法制备化学计量CuInS_2薄膜

在室温下,以不同cCu/cIn的CuCl2和InCl3混合溶液作为阳离子前驱体,Na2S水溶液为硫源,利用连续离子层吸附反应法(SILAR)在玻璃基底上制备了CuInS2薄膜。XRD结果表明,当cCu2 /cIn3 在1￣1.5范围内均可形成具有黄铜矿结构的CuInS2薄膜。SEM观察到随cCu2 /cIn3 的升高,薄膜表面颗粒长大并出现团簇聚集。通过XPS测定薄膜表面的化学组成证明当cCu2 /cIn3 =1.25时,CuInS2薄膜接近其标准的化学计量组成。此时薄膜的吸收系数大于>104cm-1,禁带宽度Eg为1.45eV。  

热处理对SILAR法制备CuInSe_2薄膜性能的影响

0引言铜铟硒(CIS)具有合适的带隙、高光吸收系数、适当的电荷密度和迁移率,是一种用于薄膜太阳能电池的备受关注的吸收材料[1]。目前CuInSe2薄膜已采用多种方法进行制备,如金属前驱体硒化法[2]、共沉积法[3]、溅射法[4]、电沉积法[5]和化学气相沉积法[6]等。这些方法都有各自的  

热处理对SILAR法制备CuInSe2薄膜性能的影响

CuInSe₂ ternary films were prepared by successive ionic layer absorption and reaction (SILAR) method. The films were deposited on glass substrates at room temperature and subject to heat-treatment under Ar atmosphere at various calcination temperatures, and then characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), optical absorption spectroscopy. XRD results showed that chalcopyrite structure CuInSe₂ with high degree of preferred orientation towards (112) reflection could be obtained by post-heat treatment. The compositions of films calcined at 300～400 ℃ were close to the standard stoichiometry and Cl impurity decreased after calcination. The direct band gap increased from 0.94 eV to 0.98 eV with the increase of calcination temperature.  

SILAR法制备化学计量CuInS2薄膜

在室温下，以不同c_Cu/c_In的CuCl₂和InCl₃混合溶液作为阳离子前驱体，Na₂S水溶液为硫源，利用连续离子层吸附反应法(SILAR)在玻璃基底上制备了CuInS₂薄膜。XRD结果表明，当c_Cu²⁺/c_In³⁺在1～1.5范围内均可形成具有黄铜矿结构的CuInS₂薄膜。SEM观察到随c_Cu²⁺/c_In³⁺的升高，薄膜表面颗粒长大并出现团簇聚集。通过XPS测定薄膜表面的化学组成证明当c_Cu²⁺/c_In³⁺=1.25时，CuInS₂薄膜接近其标准的化学计量组成。此时薄膜的吸收系数大于>10⁴ cm^-1，禁带宽度E_g为1.45 eV。  

Electrical Properties of Ag Thin Films Deposited by the Improved SILAR Method

Ag films were deposited on glass substrates using the successive layer adsorption and reaction (SILAR) method and characterized with XRD and AFM. The I‐V curves of the thicker Ag films obeyed ohmic law because of the formation of the continuous films. After annealing at 300°C in N₂, the conductance increased due to the removal of imperfections. Compared with the thicker film, the thinner Ag films showed nonlinear I‐V curves. After annealing, these films were inconductible. This may be ascribed to the destruction of the junction, that existed between the Ag islands. The absorption spectra of the films proved the formation of the Ag islands after annealing. With the thickness of the films further decreasing, the Ag films became insulated.