热处理对SILAR法制备CuInSe_2薄膜性能的影响

0引言铜铟硒(CIS)具有合适的带隙、高光吸收系数、适当的电荷密度和迁移率,是一种用于薄膜太阳能电池的备受关注的吸收材料[1]。目前CuInSe2薄膜已采用多种方法进行制备,如金属前驱体硒化法[2]、共沉积法[3]、溅射法[4]、电沉积法[5]和化学气相沉积法[6]等。这些方法都有各自的  

热处理对SILAR法制备CuInSe2薄膜性能的影响

CuInSe₂ ternary films were prepared by successive ionic layer absorption and reaction (SILAR) method. The films were deposited on glass substrates at room temperature and subject to heat-treatment under Ar atmosphere at various calcination temperatures, and then characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), optical absorption spectroscopy. XRD results showed that chalcopyrite structure CuInSe₂ with high degree of preferred orientation towards (112) reflection could be obtained by post-heat treatment. The compositions of films calcined at 300～400 ℃ were close to the standard stoichiometry and Cl impurity decreased after calcination. The direct band gap increased from 0.94 eV to 0.98 eV with the increase of calcination temperature.