GaAsN/AlAs/AlGaAs double barrier quantum wells grown by molecular beam epitaxy as an alternative to infrared absorption below 4 μm

In this work, we report on the design, growth and characterization of GaAsN/AlAs/AlGaAs double barrier quantum well infrared detectors to achieve intraband absorption below 4 μm. Due to the high effective mass of N-dilute alloys, it is common for these N-containing double barrier quantum well structures to have more than one bound state within the quantum well, enabling the possibility of achieving multispectral absorption from these confined levels to the quasi-bound. Based on a transfer matrix calculation we will study the influence of the potential parameters, in particular the well width and the introduction of a GaAs spacer layer in between the N-well and the AlAs barriers. We will compare the case in which there are two confined levels with the case in which only one level is bound, like in the conventional AlGaAs/AlAs/GaAs structures. On the basis of the simulation, we have grown and characterized some N-containing double barrier detectors. Moreover, an optimization of the post-growth annealing treatments of the GaAsN quantum well structures has also been performed. Finally, room temperature absorption measurements of both as-grown and annealed samples are presented and analyzed.     

Resonance method for IR sensing

A highly sensitive method for infrared radiation detection based on thermal resonance in an active bolometer is set forth. An active bolometer is a self-oscillating system consisting of an IR-sensitive cell in a feedback circuit of an adjustable proportional controller. The analysis of an active bolometer autonomous (dark) dynamics reveals that with a generalized gain factor A variation the system evolves from relaxation type towards oscillating and self-oscillating type. When A=A_c, where A_c is a critical value of the generalized gain factor A, the steady state loses stability through self-excited thermal oscillations. The resonance in a system weakly perturbed by IR radiation modulated at self-oscillation frequency q₀[1+exp(iω_ct)] is considered. It is shown that in a small precritical vicinity =(A−A_c)/A_c of the gain factor the amplitude of forced thermal oscillations is proportional to q₀/A_c. The D^* calculation reveals that the detection power of a passive (A=0) bolometer increases with feedback introduction by a factor of 1/||. The detection powers of feasible versions of an active bolometer are compared.     

Indoor radon measurements in dwellings of four Saudi Arabian cities

An indoor radon survey of a total of 269 dwellings, with one dosimeter per house, distributed in four Saudi Arabian cities was carried out. The objective of this survey was to carry out indoor radon measurements of two cities in the Eastern Province, Khafji and Hafr Al-Batin and to compare this with two cities in the Western Province, Al-Madina and Taif. The survey provides additional information about indoor radon concentrations in Saudi Arabia. The results of the survey in these cities showed that the overall minimum, maximum and average radon concentration were 7,137 and 30 Bqm⁻³, respectively. The lowest average radon concentration (20 Bqm⁻³) was found in Hafr Al-Batin, while the highest average concentration was found in Khafji (40 Bqm⁻³).     

High resolution staring arrays answering compact MW and LW applications

This paper overviews the electro-optical and thermal performances of different types of infrared detectors manufactured by Sofradir. The detector’s fabrication processes and detector’s performance are shortly described. New staring arrays are more compact and offer system solutions required by infrared market. Special attention is directed to some reliability advantages of new dewar design. Finally, the development trends for highest resolution infrared detector are discussed. The paper presented there appears in Infrared Photoelectronics, edited by Antoni Rogalski, Eustace L. Dereniak, Fiodor F. Sizov, Proc. SPIE Vol. 5957, 59570U (2005).     

面阵探测器的像点亚像素定位研究

面阵探测器可直接探测点目标图像的位置，但其定位精度受到探测器分辨率的限制。因此，亚像元精度技术得到了发展。它是利用目标像点的灰度分布特性，通过内插细分算法，确定出像点位置。可将定位精度提高1—2个数量级。本文介绍了几种实现目标像点亚像素定位的内插细分算法。对它们的计算公式、特点进行了分析，并进行了实验验证。     

Identification of micro-scale calorimetric devices

Micro-calorimetric devices using Si-based sensors are very useful for the study of gas–solid reactions, in which very low mass of reactants are necessary. But in fact the consequence of using flat detectors is an increase of the uncertainty in the measured energy. In this work a calorimetric gas sensor based on Xensor chip is analysed studying the local x–y contributions of dissipation to the sensitivity related to the value in the centre. We study also the effects of the gas-flow on the sensitivity, comparing the results obtained with two Xensor type chips. Finally we carry out a deeper analysis of the x–y effects on the calorimetric detector for dissipations in the reactant shell extremely close to the detector surface to visualize the link between the power density distribution and the output signal.     

电化学检测在流动注射分析中的应用

评述了近几年来电化学检测在流动注射分析中的应用，展望了流动注射电化学分析法的发展动向。     

Copper ring-disk microelectrodes: fabrication, characterization, and application as an amperometric detector for capillary columns

A novel approach to the fabrication of metal ring-disk (RD) microelectrodes is presented that employs flexible chemical vapor deposition (CVD) and electrode modification techniques. Specifically, the development of a copper ring-disk microelectrode is described utilizing a combination of CVD coating, electroetching, and electroplating. Initially, a 25 μm diameter tungsten wire is concentrically coated by CVD with an insulating layer of silica, a layer of tungsten metal, and finally, a second outer layer of silica. The copper surface was prepared by first creating micrometer cavities by electrochemical etching the tungsten in hydroxide solutions followed by electrodeposition of copper from aqueous solutions of Cu(II). Each step of the process was characterized by scanning electron microscopy, optical microscopy, and cyclic voltammetry, demonstrating the preparation of a viable metal-based dual ring-disk microelectrode system. For the purpose of demonstrating the concept of introducing specific selectivity into the device, amperometric detection of galactose in 0.1 M NaOH was performed at +0.60 V in bulk solution and after flow injection analysis in a capillary column.     

Physical grounds of high-sensitive room temperature detection of infrared radiation involving spherical excitons at impurities in crystals

The possibility of the IR-radiation detecting in crystals of direct-gap semiconductors, caused by effects of IR-quenching of probe visible-range radiation within the region of a crystal relative transparency, is studied both theoretically and experimentally. The comparison of some mechanisms investigated allows to conclude that the most probable explanation of the IR-quenching effect, experimentally observed in the CdS crystal, is the mechanism of probe radiation absorption with photon energy deficit with respect to exciton resonance, which is eliminated due to exchange interaction of a free exciton in the intermediate state with spherical excitons localized on manyelectron atoms of impurity.     

Excitonic detectors of infrared and submillimeter radiation

The theory of new type detectors based on the quenching of secondary emission in direct-gap semiconductors (lines of Raman light scattering due to interaction between free and bound excitons in the crystal, and also bands of edge radiation) caused by IR or submillimeter radiation is proposed. The results obtained are confirmed by the experiment performed for CdS crystal excited by ultraviolet radiation of mercury lamp, at liquid helium temperature.