Effect of absorbed pump power on the quality of output beam from monolithic microchip lasers

The dependence of the beam propagation factor (M ² parameter) with the absorbed pump power in the case of monolithic microchip laser under face-cooled configuration is extensively studied. Our investigations show that the M ₂ parameter is related to the absorbed pump power through two parameters (α and β) whose values depend on the laser material properties and laser configuration. We have shown that one parameter arises due to the oscillation of higher order modes in the microchip cavity and the other parameter accounts for the spherical aberration associated with the thermal lens induced by the pump beam. Such dependency of M ² parameter with the absorbed pump power is experimentally verified for a face-cooled monolithic microchip laser based on Nd³⁺ -doped GdVO₄ crystal and the values of α and β parameters were estimated from the experimentally measured data points.     

Electron spin lifetimes in Hg0.78Cd0.22 Te and InSb

We have made direct pump–probe measurements of spin lifetimes in long wavelength narrow-gap semiconductors at wavelengths between 4 and 10 μm and from 4 to 300 K. In particular, we measure remarkably long spin lifetimes, τ_s300 ps, even at 300 K for epilayers of degenerate n-type InSb. In this material the mobility is approximately constant between 77 and 300 K, and we find that τ_s is approximately constant in this temperature range. In order to determine the dominant spin relaxation mechanism we have investigated the temperature dependence of τ_s in non-degenerate lightly n-type Hg_0.78Cd_0.22Te of approximately the same band gap as InSb, and find that τ_s varies from 356 ps at 150 K to 24 ps at 300 K. Our results, both in magnitude and temperature dependence of τ_s, imply that the Elliott–Yafet model dominates in these materials.     

Performance of a CW pumped Nd:YVO4 amplifier with kHz pulses

Until recently, simple and reliable high repetition-rate laser sources with nanosecond pulses much shorter than from conventional A-O Q-switch lasers were not available. However over the past 2 years we have developed such lasers based on proprietary fast E-O switching technology, which allows designs delivering 1 ns pulses and subnanosecond jitter for good synchronisation. The technology provides pulses with multi-kW peak power and repetition-rates to >100 kHz.Most recently, the performance of these short pulse lasers has been developed further by implementing oscillator/amplifier (master oscillator and power amplifier, MOPA) technology which increases the output to >1 W average power. Here we report on a simple model that has been used to predict the performance of the CW pumped Nd:YVO₄ amplifier used in the MOPA laser. The model is based on the well-known expressions for the saturated gain applying to laser pulses, but more usually applied to pulse-excited amplifiers. The model is shown to allow a good interpretation of the amplifier behaviour for kHz pulses and to be a useful tool for predicting the performance of the MOPA laser.     

氙灯泵浦的NYAB晶体调Q激光运转特性及实验研究

首次报道了氙灯泵浦的自激活自倍频NYAB复合功能晶体的BDN染料片调Q运转,获得了自倍频绿光单脉冲.测量了不同L和T_o情况下的绿光脉冲的能量、脉宽和峰值功率.文中还从理论上推导了自激活自倍频晶体调Q激光器的方程组.数值求解方程组,所得的理论数据与实验结果很好地相符.最后,讨论了进一步提高绿光脉冲峰值功率的途径.     

Study of a millimeter-wave squint indirect holographic algorithm suitable for imaging with large field-of-view

In this paper a millimeter-wave （MMW） squint indirect holographic method is presented, which is suitable for imaging with a large field-of-view. The proposed system employs the squint operation mode to remove the background and twin- image interferences, which achieves a similar effect to off-axis holography but leaves out the large-aperture quasi-optical component. The translational scanning manner enables a large field of view and ensures the image uniformity, which is difficult to realize in off-axis holography. In addition, a corresponding imaging algorithm for the presented scheme is developed to reconstruct the image from the recorded hologram. Some imaging results on typical objects, obtained with electromagnetic simulation, demonstrate good performance of the imaging scheme and validate the effectiveness of the image reconstruction algorithm.     

小信号脉冲抽运时掺铒光纤自发辐射的研究

自发辐射(ASE)是掺铒光纤放大器(EDFA)的重要噪声源,对于由EDFA构成的光纤激光器有重要影响。理论与实践证明,它与抽运方式紧密相关,所以研究脉冲抽运时掺铒光纤(EDF)的自发辐射有重要的学术价值。同时,脉冲抽运对于EDFA锁模激光器的研究也有一定意义。从理论和实验两方面研究了小信号脉冲抽运时,抽运脉冲宽度和幅度对于EDF的自发辐射特性的影响,得到了小信号抽运时输出ASE噪声平均值的近似解析解。研究发现,小信号脉冲抽运时输出信号的幅度与抽运脉冲的宽度成正比。这个新现象可用于脉冲宽度的全光检测。     

Hot carrier degradation mechanism interpretation by lateral distribution of interface and bulk trap density

We investigated the drain avalanche hot carrier effect (DAHC) of p-type metal-oxide-semiconductor field effect transistor of 0.14 μm channel length (PMOSFET) with SiON gate dielectric. Using three different stress conditions of substrate maximum current, the changes to threshold voltage, maximum transconductance, saturation current and channel leakage current was monitored. Concurrently, the lateral distribution of interface trap density (N_it) and bulk trapped charge density (N_ot) with stress time has been extracted along the 70 nm half channels from gate edge to drain junction, which is the first endeavor in describing charge traps along sub 100 nm short channels. The degradation of the PMOSFET was described by combining electrical property with N_it and N_ot profiles. Hot electron punch through (HEIP) effect was evidenced by negative Not distribution near the drain junction while more severe hot carrier degradation was successfully demonstrated by the empirical power law dependence of the electrical parameters N_it and N_ot. We have studied the evolution of degradation behavior along highly scaled tens of nanometer channel, and N_it and N_ot profile offers systematic study and interpretation of degradation mechanism of hot carrier effect in MOSFET devices.     

多通道表面放电光泵浦源触发特性研究

介绍了多通道表面放电光泵浦源的设计,理论分析了触发电压幅值及上升时间、绝缘基板厚度等参数对所设计光泵浦源触发特性的影响。分析表明：在触发电压作用下,通道两电极处电场出现强烈畸变,而通道中间电场基本为零。采用高速相机拍摄泵浦源的放电图像以及电流线圈测量各通道的放电电流这两种方法实验研究了泵浦源的同步性及放电均匀性。当氮氩混合气体总气压为0.1 MPa (氮氩体积比为3∶7),充电电压20 kV,触发电压30 kV,前沿约10 ns时,成功实现了10通道均匀放电,抖动约20 ns。实验结果表明：在保证放电装置绝缘良好的情况下,若充电电压和触发电压越高,触发电压上升时间越短,触发电极至通道的有效距离越短,则多通道放电的抖动就越小,放电均匀性越好。     

放电脉冲重频准分子激光器在不同应用领域的发展现状(英文)

研究了脉冲宽度为25～40 ns的放电脉冲XeCl准分子激光器的工作参数。结果显示,激光器产生的脉冲能量为0.2～0.7 J,重复频率为100 Hz,表明在泵浦功率为2.8～3.3 MW/cm3时,激光器实现了2.6%的激光效率和3.8%的本征效率。     

高功率光纤激光器二级抽运技术的理论分析

从理论上分析了高功率光纤激光器直接抽运和二级抽运的斜率效率和热管理问题. 计算结果表明:波长为975 nm的激光直接抽运产生波长为1070 nm的激光时,理论斜率效率为80%,但当抽运光功率为10 kW时,在强制水冷条件下纤芯极值温度也难以降到150 ℃以下;在二级抽运技术中,波长为1018 nm的激光抽运产生波长为1070 nm的激光时,若采用传统的包层抽运技术,其斜率效率不足20%,如果抽运功率填充因子由0.0025提高到0.1,则理论上斜率效率可由18.5%提高到80.9%,从而总斜率效率由15.5 关键词： 二级抽运 功率填充因子 斜率效率 热管理