Interface and defects engineering for multilayer laser coatings

High-reflective multilayer laser coatings are widely used in advanced optical systems from high power laser facilities to high precision metrology systems. However, the real interface quality and defects will significantly affect absorption/scattering losses and laser induced damage thresholds of multilayer coatings. With the recent advances in the control of coating design and deposition processes, these coating properties can be significantly improved when properly engineered the interface and defects. This paper reviews the recent progress in the physics of laser damage, optical losses and environmental stability involved in multilayer reflective coatings for high power nanosecond near-infrared lasers. We first provide an overview of the layer growth mechanisms, ways to control the microstructures and reduce layer roughness, as well as the nature of defects which are critical to the optical loss and laser induced damage. Then an overview of interface engineering based on the design of coating structure and the regulation of deposition materials reveals their ability to improve the laser induced damage threshold, reduce the backscattering, and realize the desirable properties of environmental stability and exceptional multifunctionality. Moreover, we describe the recent progress in the laser damage and scattering mechanism of nodule defects and give the approaches to suppress the defect-induced damage and scattering of the multilayer laser coatings. Finally, the present challenges and limitations of high-performance multilayer laser coatings are highlighted, along with the comments on likely trends in future.     

The Role of Radical Bridges in Polynuclear Single-Molecule Magnets

Employing radical bridges between anisotropic metal ions has been a viable route to achieve high-performance single-molecule magnets (SMMs). While the bridges have been mainly considered for their ability to promote exchange interactions, the crystal-field effect arising from them has not been taken into account explicitly. This lack of consideration may distort the understanding and limit the development of the entire family. To shed light on this aspect, herein we report a theoretical investigation of a series of N -radical-bridged diterbium complexes. It is found that while promoting strong exchange coupling between the terbium ions, the N -radical induces a crystal field that interferes destructively with that of the outer ligands, and thus reduces the overall SMM behavior. Based on the theoretical results, we conclude that the SMM behavior in this series could be further maximized if the crystal field of the outer ligands is designed to be collinear with that of the radical bridge. This conclusion can be generalized to all exchange-coupled SMMs.     

Synthesis and optical properties of new chalcones containing 4-[bis(2-hydroxyethyl)amino]phenyl fragment

New chalcones with 4-[bis(2-hydroxyethyl)amino] phenyl fragment were obtained from 4-[bis(2-acetoxyethyl) amino]- benzaldehyde by the Claisen–Schmidt reaction. From their UV-VIS absorption and emission spectra, optical band gap values were calculated based on the Stokes shifts as well as the molar absorption coefficients and fluorescence quantum yields were estimated. The dependence of the absorption and emission maxima on solvent polarity and pH was evaluated.     

Interaction induced non-reciprocal three-level quantum transport

Besides its fundamental importance, non-reciprocity has also found many potential applications in quantum technology. Recently, many quantum systems have been proposed to realize non-reciprocity, but stable non-reciprocal process is still experimentally difficult in general, due to the needed cyclical interactions in artificial systems or operational difficulties in solid state materials. Here, we propose a new kind of interaction induced non-reciprocal operation, based on the conventional stimulated-Raman-adiabatic-passage(STIRAP) setup, which removes the experimental difficulty of requiring cyclical interaction, and thus it is directly implementable in various quantum systems. Furthermore, we also illustrate our proposal on a chain of three coupled superconducting transmons, which can lead to a non-reciprocal circulator with high fidelity without a ring coupling configuration as in the previous schemes or implementations. Therefore, our protocol provides a promising way to explore fundamental non-reciprocal quantum physics as well as realize non-reciprocal quantum device.     

Full counting statistics of transport electrons through a two-level quantum dot with spin–orbit coupling

We study the full counting statistics of transport electrons through a semiconductor two-level quantum dot with Rashba spin–orbit (SO) coupling, which acts as a nonabelian gauge field and thus induces the electron transition between two levels along with the spin flip. By means of the quantum master equation approach, shot noise and skewness are obtained at finite temperature with two-body Coulomb interaction. We particularly demonstrate the crucial effect of SO coupling on the super-Poissonian fluctuation of transport electrons, in terms of which the SO coupling can be probed by the zero-frequency cumulants. While the charge currents are not sensitive to the SO coupling.     

Defects related emission and nanosecond optical power limiting in CuS quantum dots

We report optical and nonlinear optical properties of CuS quantum dots and nanoparticles prepared through a nontoxic, green, one-pot synthesis method. The presence of surface states and defects in the quantum dots are evident from the luminescent behavior and enhanced nonlinear optical properties measured using the open aperture Z-scan, employing 5 ns laser pulses at 532 nm. The quantum dots exhibit large effective third order nonlinear optical coefficients with a relatively lower optical limiting threshold of 2.3 J cm⁻², and the optical nonlinearity arises largely from absorption saturation and excited state absorption. Results suggest that these materials are potential candidates for designing efficient optical limiters with applications in laser safety devices.     

Hexagonal boron nitride quantum dots: Properties,preparation and applications

As a new type of quantum dots (QDs), hexagonal boron nitride quantum dots (BNQDs) exhibit promising potential in the applications of disease diagnosis, fluorescence imaging, biosensing, metal ion detection, and so on, because of their remarkable chemical stability, excellent biocompatibility, low cytotoxicity, and outstanding photoluminescence properties. However, the large-scale fabrication of homogeneous BNQDs still remains challenging. In this article, the properties and common fabrication methods of BNQDs are summarized based on the recent research progress. Then, the corresponding yields, morphologies, and fabrication mechanisms of these as-obtained BNQDs are discussed in detail. Moreover, the applications of these as-obtained BNQDs in different fields are also discussed. This article is expected to inspire new methods and improvements to achieve large-scale fabrication of homogeneous BNQDs, which will enable their practical applications in future.     

Collective Tunnelling of Strongly Interacting Cold Atoms in a Double-Well Potential

It is known that under resonance conditions, a group of strongly interacting bosonic atoms, trapped in a double-well potential, mimics a single particle, performing Rabi oscillations between the wells. By implication, all atoms need to tunnel at roughly the same time, even though the Bose–Hubbard Hamiltonian accounts only for one-atom-at-a-time transfers. The mechanism of this collective behavior is analyzed, the Rabi frequencies in the process are evaluated, and the limitation of this simple picture is discussed. In particular, it is shown that the small rapid oscillations superimposed on the slow Rabi cycle result from splitting the transferred cluster at the sudden onset of tunnelling, and disappear if tunnelling is turned on gradually.     

Atmospheric chemistry of diazomethane – an experimental and theoretical study

The kinetics of the O₃, OH and NO₃ radical reactions with diazomethane were studied in smog chamber experiments employing long-path FTIR and PTR-ToF-MS detection. The rate coefficients were determined to be k _CH2NN+O3?=?(3.2?±?0.4)?×?10^?17 and k _CH2NN+OH?=?(1.68?±?0.12)?×?10^?10 cm³ molecule^?1 s^?1 at 295?±?3?K and 1013?±?30 hPa, whereas the CH₂NN?+?NO₃ reaction was too fast to be determined in the static smog chamber experiments. Formaldehyde was the sole product observed in all the reactions. The experimental results are supported by CCSD(T*)-F12a/aug-cc-pVTZ//M062X/aug-cc-pVTZ calculations showing the reactions to proceed exclusively via addition to the carbon atom. The atmospheric fate of diazomethane is discussed.     

Highly Luminescent Red Phosphorescent OLED with Interfacial Layers for Hole Transport and Electron Injection

Four kinds of red phosphorescent organic light-emitting devices were fabricated and compared to investigate the effect of interfacial layers for hole transport and electron injection. 1 nm-thick LiF in the device A and C and 1 nm-thick Cs₂CO₃ in the device B and D were deposited as an electron injection layer between the anode and the electron transport layer, and 5 nm-thick layer of dipyrazion[2,3-f:2′,2′-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile[HATCN] was inserted as a hole transport interfacial layer between the hole injection layer and the hole transport layer only in the device C and D. Under a luminance of 1000 cd/m², the power efficiencies were 7.6 lm/W and 8.5 lm/W in the device A and B, and 8.6 lm/W and 13.4 lm/W in the device C and D. The quantum efficiency of the device D was 15.8% under 1000 cd/m² which was somewhat lower than those of the device A and C, but a little higher than that of the device B. The luminance of the device D was much higher than those of the other devices at a given votage. The luminance of the device D at 7 V was 23,710 cd/m², which was 13.0, 3.4, and 4.0 times higher than those of the device A, B, and C at the same voltage, respectively.