Nano hillock and complex crater formation by low-energy proton implantation with incident angle into lithium niobate single crystal

The formation of nano-size hillocks and simple and complex craters was observed as a result of ion–surface collisions with a lithium niobate single crystal on proton implantation. The low-energy ion implantation process is considered as a controllable and versatile tool for surface and near-surface modifications down to an atomic scale as an alternative to the swift heavy ion irradiation effect. Lithium niobate samples implanted by proton ions with a low energy of 120 keV at various fluences (10¹⁵ and 10¹⁶ protons/cm²) were studied using atomic force microscopy (AFM). The images of surface modification appear as simple and complex crater formation in the case of incident ions at normal to the surface. Varying the angle of incidence to θ=30° with respect to the normal to the surface, hillocks and multi-hillocks were observed. The complex craters with central uplifted, cone-shaped hillocks with a height of up to 4.3 nm are surrounded by low-height (1 nm) rims. The hillock height varies from a few nanometers to 16 nm with the basal diameter from 200 to 340 nm depending on the ion implantation conditions. The complex crater and hillock formation on the lithium niobate sample surface at the collision spot with the impact of incident angle is discussed.     

Growth morphology of {100} faces of L‐Arginine phosphate monohydrate single crystals investigated by atomic force microscopy

Morphology of the {100} faces of L‐arginine phosphate monohydrate (LAP) single crystal grown at 25 °C at a supersaturation of 0.32 has been discussed. The rectangular dislocation growth hillocks elongate along the b direction, which manifests the fast growth due to the strong Period Bond Chain (PBC) bonds along this direction. Apart from that, the growth hillocks are consistent with the macro‐morphology of the crystal grown at the pH value of about 4.2. The lopsided shapes of the hillocks result from step bunching. Triangular pits are assumed to form during the process of the steps getting across the impurities. The hollow cavities existing on the growth hillocks also elongate along the b direction and they can lead to the formation of other defects such as dislocations. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Development of etch hillocks on different Si(h k l) planes in silicon anisotropic etching

The connection between the way of development and appearance of mesa structures and typical hillocks developing during anisotropic etching of monocrystalline silicon in 5 M KOH saturated with isopropanol has been studied both theoretically and experimentally. A simple geometrical model of mesa formation was presented. Then, the process of hillock growth in result of mesa transformation caused by etch mask underetching was analyzed. At the second part of the paper, the model of hillocks formation was verified experimentally. For this purpose, a series of experiments with etching of mini-mesas through the masks with various patterns in the conditions favoring hillock formation was carried out. It was shown that at the final stage of the etching process the mesas transform into hillocks, bounded by the planes close to {1 1 1}. Probably at the first stage of hillocks formation, mini-mesas develop. Such stable mini-mesas, produced in the presence of random micro-masks, may transform into typical hillocks in effect of successive releasing of {1 1 1} mini-faces. It seems that the process of hillock formation is similar to mesa etching.

The shapes of hillocks produced on the substrates with different from (0 0 1) crystallographic orientations have been also analyzed. The similarities of the hillocks and intentionally prepared mesas were underlined. It was stated that the morphologies of hillocks are strictly connected with crystallographic orientation of etched substrate. Different shapes of hillocks developing on the substrates with different crystallographic orientations, reflect the arrangement and inclination of {1 1 1} planes on considered substrate.     

Surface Morphological Evolution of Thin Films Under Stress and Capillary Forces

Holes and hillocks can commonly be observed on the surface of thin films after thermal processing. For films deposited on a substrate with a different coefficient of thermal expansion, strains due to thermal expansion mismatch can produce very large stresses. While capillary forces tend to produce a thermal groove at a grain boundary (GB), compressive and tensile stresses can form, respectively, a ridge or a canal at the GB. These phenomena can strongly influence mobility of a GB. The formation of a canal enhances the potential for pinning the GB, whereas the formation of a ridge tends to repel the GB.After a short overview of the theory, analytical and numerical solutions for surface profiles of static and travelling GBs under stress are presented. The results of the computed profiles are compared to experimental surface morphologies in aluminum thin film.