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排序方式: 共有100条查询结果,搜索用时 312 毫秒
1.
2.
采用MOCVD技术在Al2O3(0001)衬底上生长了GaN薄膜,使用透射光谱、光致发光光谱和X射线双晶衍射三种技术测试了五类GaN薄膜样品,实验结果表明:GaN薄膜透射谱反映出的GaN质量与X射线双晶衍射测量的结果一致,即透射率越大,半高宽越小,结晶质量越好;而X射线双晶衍射峰半高宽最小的样品,其PL谱的带边峰却很弱,这说明PL谱反映样品的光学性能与X射线双晶衍射获得的结晶质量不存在简单的对应关系,同时还报导了一种特殊工艺生长的高阻GaN样品的RBS/沟道结果。 相似文献
3.
Nitrogen implantation has been performed in silicon [001] crystals in carefully controlled alignment conditions. The channeling effects are clearly evident when implanting in [001] and [011] directions at energies ranging from 0.6 to 1.4 MeV. Both ion distribution and damage profiles are strongly influenced by channeling effects during ion implantation. The angular region around the [001] direction has been also investigated by implanting at small angles with respect to the axis. The same kind of study has been performed by implanting at different angles with respect to the planar (011) direction. The ion distributions (investigated by SIMS) show a strong dependence upon the alignment conditions. Moreover in high energy ion implantation, the lattice damage is located deep inside the crystal, leaving the surface layer almost unperturbed. The channeling effects on the damage production have been investigated by double crystal diffraction (DCD) in the low-dose regime and by RBS-channeling experiments (after implantation at doses greater than 1 × 1015 cm–2) and for different ion alignment conditions.A big increase in the ion ranges and a strong reduction in the lattice damage is evident when implanting along major crystal axes. No saturatíon of the lattice damage and of the channelled component of the beam has been detected if the implantation is performed parallel to the [011] axis. 相似文献
4.
Chunsheng Tian Stefan Gara Gerhard Hobler Gerhard Stingeder 《Mikrochimica acta》1992,107(3-6):161-169
The axial channeling behaviour of boron implants in <100>, <110> and <111> silicon wafers is investigated by SIMS. Large differences of channeling characteristics such as channeled projected range (the projected range of channeled ions or channeling peak) and the fraction of channeled to implanted ions are observed among the three major crystal orientations. Within the critical angle, the channeling behaviour is very sensitive to the incidence beam angle with respect to crystal orientations. SIMS measurements are performed at different positions along several critical directions over a whole wafer. Well channeled profiles with an incidence beam angle to crystal orientations of 0 ° are obtained for each ion implantation energy and orientation. The results are used to test various models of ion implantation by simulation. A 3-parameter model for electronic stopping power of boron in silicon was proposed. 相似文献
5.
Nils Siegbahn Mats-Olle Maånsson Klaus Mosbach 《Applied biochemistry and biotechnology》1987,12(2):91-105
A soluble, bifunctional enzyme complex has been prepared by crosslinking lactate dehydrogenase and alcohol dehydrogenase with
glutaraldehyde. The crosslinking was performed on a solid phase while the active sites of alcohol dehydrogenase and lactate
dehydrogenase were held adjacent to one another with the aid of a bis-NAD analog. Subsequently, the enzyme complex was released
from the solid phase. The soluble enzyme complex was then purified by using NAD-Sepharose as an affinity adsorbent. Based
on gel filtration experiments, the complex was estimated to consist of one of each dehydrogenase.
By using a third enzyme, lipoamide dehydrogenase, which competes with lactate dehydrogenase for NADH produced by alcohol dehydrogenase,
the effect of site-to-site orientation was studied. It was found that about 83% of the NADH produced by alcohol dehydrogenase
was oxidized by site-to-site oriented lactate dehydrogenase compared to a figure of only about 61% obtained in an identical
system of separate enzymes. This indicates that given two alternative routes, the preference for the one to lactate dehydrogenase
over the one to lipoamide dehydrogenase is enhanced when lactate dehydrogenase and alcohol dehydrogenase are site-to-site
oriented. 相似文献
6.
k-ratios of Ge-L and Si-K measured at different beam energies allow to evaluate simultaneously composition and thickness of SiGe layers on a Si substrate. A simple technique applying backscattered electrons also enables estimation of composition of bulk SiGe and of composition and thickness of relatively thick (200 nm) SiGe layers on Si. Electron channeling patterns of pseudomorphic SiGe/Si structures and of pure Si substrate show no significant differences whereas in relaxed structures a smearing of the pattern with increasing density of misfit dislocations is observed. Under particular conditions the technique of the electron beam induced current permits imaging of recombination-active misfit dislocations with a spatial resolution around 0.2 m. Moreover, a repulsion of holes due to the valence-band offset in a n-Si/SiGe heterostructure was detected. 相似文献
7.
Abstract A model for calculation of the range distribution of energetic ions with taking into account the channeling effect is proposed. The measurement of the depth distributions of boron ions in silicon crystals implanted at 13.6 and 91 MeV revealed significant difference between the measured and the calculated range profiles when the channeling effects have not been included in the calculation. In spite of deminishing the critical angles of channeling with growing ion energy the probability of the capture of ions into the channeling regime is significant in case of high energy implantation even when the incident angles are 7–10° off the main crystallographic directions. 相似文献
8.
The radiation spectrum of a photon bunch with the energy E = mc 2γ = 4 GeV channeled in the (110) plane of a diamond single crystal is calculated numerically, taking into account the inhomogeneous polarization of the medium. Features of the spectrum in the extreme soft region of frequencies are obtained. Characteristics of the calculated spectrum are in agreement with the experimental data obtained in the hard region of frequencies. 相似文献
9.
The range, detection efficiency and etching development of alpha tracks were studied in cellulose nitrate. Some other track revelation techniques employing the swelling of latent alpha and proton tracks are discussed. 相似文献
10.
We investigate the motion of high-energy particles in a crystal with regard to their interaction with the thermal vibrations of the lattice atoms using analytic methods in the theory of Markov processes including the local Fokker–Planck equation. We construct a local matrix of random actions, which is used to introduce the main kinetic functions in the traverse-energy space, namely, the function a() of energy losses due to the dynamic friction and the diffusion function b(). We show that the singularities of the functions a() and b() are related to the distinction between the contributions to the kinetics from particles moving in three different regimes, namely, in the channeling, quasichanneling, and chaotic motion modes. 相似文献