Setting local rank constraints by orthogonal projections for image resolution analysis: Application to the determination of a low dose pharmaceutical compound

Raman chemical imaging provides chemical and spatial information about pharmaceutical drug product. By using resolution methods on acquired spectra, the objective is to calculate pure spectra and distribution maps of image compounds. With multivariate curve resolution-alternating least squares, constraints are used to improve the performance of the resolution and to decrease the ambiguity linked to the final solution. Non negativity and spatial local rank constraints have been identified as the most powerful constraints to be used.     

355nm Nd∶YAG激光在H_2中的高效一级斯托克斯转换

对脉冲Nd∶YAG激光(355 nm)在H2和H2∶He-Ar混合气体中的受激拉曼散射(SRS)进行了研究。在0.5 MPa的氢气中,同时测量到从二级反斯托克斯到三级斯托克斯的多波长输出,其总转化效率达88%;而高压下只剩下一级和二级斯托克斯输出,其中二级斯托克斯最大能量转化效率达44%(对应量子效率为63%)。由于高级斯托克斯的竞争,纯氢气中一级斯托克斯的最大能量转换效率不超过43%。通过向3 MPa氢气中掺入2 MPaAr气后,很好地抑制了二级斯托克斯的产生,从而获得了能量转换效率高达71%(对应量子效率为83%)的一级斯托克斯输出。对四波混频和级联受激拉曼散射在氢气多级斯托克斯产生中的作用以及惰性气体对它们的影响进行了讨论。     

High pressure X-ray diffraction study of CdAl2Se4 and Raman study of AAl2Se4 (A=Hg, Zn) and CdAl2X4 (X=Se, S)

We report the results of an X-ray diffraction study of CdAl₂Se₄ and of Raman studies of HgAl₂Se₄ and ZnAl₂Se₄ at room temperature, and of CdAl₂S₄ and CdAl₂Se₄ at 80 K at high pressure. The ambient pressure phase of CdAl₂Se₄ is stable up to a pressure of 9.1 GPa above which a phase transition to a disordered rock salt phase is observed. A fit of the volume pressure data to a Birch-Murnaghan type equation of state yields a bulk modulus of 52.1 GPa. The relative volume change at the phase transition at ∼9 GPa is about 10%. The analysis of the Raman data of HgAl₂Se₄ and ZnAl₂Se₄ reveals a general trend observed for different defect chalcopyrite materials. The line widths of the Raman peaks change at intermediate pressures between 4 and 6 GPa as an indication of the pressure induced two stage order-disorder transition observed in these materials. In addition, we include results of a low temperature Raman study of CdAl₂S₄ and CdAl₂Se₄, which shows a very weak temperature dependence of the Raman-active phonon modes.     

拉曼放大器中放大的自发拉曼散射与拉曼开-关增益关系的研究

研究了拉曼放大器中放大的自发拉曼散射对拉曼开－关增益的影响，并提出了一种利用自发拉曼散射谱来调整拉曼放大器位曼开－关增益平坦的方法，实验采用4个波长为14xx nm的激光二极管作为抽运源，75km的G．652光纤作为传输介质，获得了C波段附近的光放大，同时对此给出了合理的理论解释。     

CdSe和ZnO量子点的拉曼光谱研究

本文介绍了用拉曼光谱研究CdSe和ZnO两种Ⅱ Ⅳ族量子点材料的结果,对拉曼峰进行了指认。观察到的光学声子峰位的移动被认为是由量子限制效应引起。     

激光等离子体探针及应用研究

本文介绍用阴影、纹影相干涉方法确定等离子体折射系数变化的原理。分析了等离子体中的非线性效应和对光探测系统的基本要求。并简要叙述了实验上采用的后向喇曼探测束,给出了等离子体干涉、纹影和阴影的测量结果。     

Preparation and properties of the biodegradable graded blend of poly(L‐lactic acid) and poly(ethylene oxide)

We prepared biodegradable poly(ethylene oxide) (PEO)/poly(L ‐lactic acid) (PLLA) graded blends by the dissolution–diffusion process, and discussed the biodegradability and tensile strength of the graded blends by comparing isotropic blend and PLLA only. All the graded blends were degraded more largely than the PLLA only and isotropic blend (PEO: 37.5 wt %), which had the same content as the total content of those graded blends. The graded blend having most excellent wide compositional gradient was degraded most largely with the enzyme. Thus, graded structure of the blends promoted their biodegradabilities large. It was considered that the dissolution of PEO with water increased the surface area attacked by the enzyme, while PEO caught PLLA oligomers to promote the biodegradation of PLLA. Then, the biodegradabilities of the graded blends were suppressed by the increasing crystallinity of PLLA. Furthermore, the strengths of all the graded blends were larger than those of the isotropic blend. © 2007 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 45: 2972–2981, 2007     

Structural and vibrational properties of dilute GaNxAs1−x(P1−x)

We report a comprehensive analyzes of the Fourier transform infrared (FTIR) absorption and Raman scattering data on the structural and vibrational properties of dilute ternary GaAs_1−xN_x,[GaP_1−xN_x] (x<0.03) alloys grown on GaAs [GaP] by metal organic chemical vapor deposition (MOCVD) and solid source molecular beam epitaxy (MBE). By using realistic total energy and lattice dynamical calculations, the origin of experimentally observed N-induced vibrational features are characterized. Useful information is obtained about the structural stability, vibrational frequencies, lattice relaxations and compositional disorder in GaNAs (GaNP) alloys. At lower composition (x<0.015) most of the N atoms occupy the As [P] sublattice {N_As[N_P]}—they prefer moving out of their substitutional sites to more energetically favorable locations at higher x. Our results for the N-isotopic shifts of local mode frequencies compare favorably well with the existing FTIR data.     

A Semiconductor Laser of the Visible Range as an Exciting Source of Raman Scattering

A possibility of application of semiconductor lasers of the visible range as exciting sources for Raman spectroscopy is studied. An experimental set-up for measuring Raman spectra of polycrystalline dielectrics and broad-gap semiconductors excited by a semiconductor laser with a wavelength of 640 nm was created. The conditions under which the spectral width of the lasing line of a semiconductor laser was within 10^-3 cm^-1 in the continuous mode with a power of 10 mW are realized. The characteristics of various types of exciting sources used in Raman spectroscopy are compared. The results of studies of the characteristic Raman spectra excited with a semiconductor laser in polycrystalline sulfur are presented.     

Performance of a CW pumped Nd:YVO4 amplifier with kHz pulses

Until recently, simple and reliable high repetition-rate laser sources with nanosecond pulses much shorter than from conventional A-O Q-switch lasers were not available. However over the past 2 years we have developed such lasers based on proprietary fast E-O switching technology, which allows designs delivering 1 ns pulses and subnanosecond jitter for good synchronisation. The technology provides pulses with multi-kW peak power and repetition-rates to >100 kHz.Most recently, the performance of these short pulse lasers has been developed further by implementing oscillator/amplifier (master oscillator and power amplifier, MOPA) technology which increases the output to >1 W average power. Here we report on a simple model that has been used to predict the performance of the CW pumped Nd:YVO₄ amplifier used in the MOPA laser. The model is based on the well-known expressions for the saturated gain applying to laser pulses, but more usually applied to pulse-excited amplifiers. The model is shown to allow a good interpretation of the amplifier behaviour for kHz pulses and to be a useful tool for predicting the performance of the MOPA laser.