Chemisorption at interfaces between organic semiconductors and metals: role of the electron affinity

Chemisorption is a well-known phenomenon for many interfaces between organic semiconductors and metals. It is shown that many published data indicate that the occurrence of chemisorption can be rationalized upon the consideration of the metal work function versus the electron affinity of the organic semiconductor.     

On possible spin injection at non-ideal Schottky contacts

The role of the tunneling mechanisms in metal-disordered layer-semiconductor structure under spin injection at the interface is investigated. The non-ideal metal-semiconductor structure as prepared by ionized cluster beam deposition is considered, and it is shown that the depletion region of the semiconductor can be tailored to include a suitably heavily doped region near the interface. The tunneling is described within a simplified model in which the expression for the interface resistance of the metal-disordered layer-semiconductor structure is obtained. It is argued that in the case of ionized cluster beam deposited non-ideal Schottky structure a significant spin injection is achieved.     

Investigation on the barrier height and inhomogeneity of nickel silicide Schottky

The apparent Schottky barrier height (SBH) of the nickel silicide Schottky contacts annealed at different temperatures was investigated based on temperature dependence of I-V characteristic. Thermionic emission-diffusion (TED) theory, single Gaussian and double Gaussian models were employed to fit I-V experimental data. It is found the single Gaussian and double Gaussian SB distribution model can give a very good fit to the I-V characteristic of apparent SBH for different annealing temperatures. Also, the apparent SBH and the leakage current increase with annealing temperatures under reverse voltage. In addition, the homogeneity of interfaces for the samples annealed at temperatures of 500 and 600 °C is much better than that of the samples annealed at temperatures of 400, 700, and 800 °C. This may result from the phase transformation of nickel silicide due to the different annealing temperatures and from the low Schottky barrier (SB) patches.     

Advantages of the Ns group in the reactions of N-SO2R inosines with benzylamine and with NH3

The reactivity of N¹-alkylsulfonyl- and N¹-arylsulfonyl-2′,3′,5′-tri-O-acetylinosine with benzylamine and with ¹⁵NH₃, regarding the attack on C2, has been shown to be in the order CF₃SO₂ (Tf) > 2,4-(NO₂)₂C₆H₃SO₂ (DNs) ? 4-NO₂C₆H₄SO₂ (pNs) ≈ C₆F₅SO₂ (PFBs) > 2-NO₂C₆H₄SO₂ (Ns) ? CH₃SO₂ (Ms) > 4-CH₃C₆H₄SO₂ (Ts) > 2,4,6-(CH₃)₃C₆H₂SO₂ (Mts). In spite of its intermediate reactivity, the Ns group is the most appropriate, since in this case the formation of by-products is minimised during the ring-opening and ring-closing steps of the process. Another advantage of the Ns group is thus disclosed.     

Electronic conduction properties of silver particles in cesium oxide

The electronic conductivity of a particular metallic particles/semiconductor system, i.e. Ag particles in cesium-oxide thin film, has been studied. The experimental results show a transition from a polycrystalline semiconductor to metallic behavior as characterized by the conductivity-temperature curve (log bs 1/T), and a five order of magnitude increase in the room temperature value of the conductivity with surface Ag content increasing from an equivalent thickness of 2Å to 20Å. It was observed by TEM that the deposited Ag was mainly in the form of dispersed particles with the particle size varying from 20 to 200Å and their separations varying from hundreds to tens of angstroms over the Ag content range. These results can hardly be explained with the model of direct electron tunneling through the Schottky barrier at the Ag-particle/cesium-oxide interface. A microstructure model with two conduction layers is presented, and an analogy to the hopping conduction mechanism is proposed to explain the electronic conduction behavior. This model predicts that the attenuation length for electronic wavefunctions localized at Ag particles falls in the range 20–50Å.     

Temperature-dependent optical absorption measurements and Schottky contact behavior in layered semiconductor n-type InSe(:Sn)

The layered n-InSe(:Sn) single crystal samples have been cleaved from a large crystal ingot grown from non-stoichiometric melt by the Bridgman-Stockbarger method. It has been made the absorption measurements of these samples without Schottky contact under electric fields of 0.0 and 6000 V cm⁻¹. The band gap energy value of the InSe:Sn has been calculated as 1.36 ± 0.01 eV (at 10 K) and 1.28 ± 0.01 eV (at 300 K) under zero electrical field, and 1.31 ± 0.01 eV (at 10 K) and 1.26 ± 0.01 eV (at 300 K) under 6000 Vcm⁻¹. The current-voltage (I-V) characteristics of Au-Ge/InSe(:Sn)/In Schottky diodes have been measured in the temperature range 80-320 K with a temperature step of 20 K. An experimental barrier height (BH) Φ_ap value of about 0.70 ± 0.01 eV was obtained for the Au-Ge/InSe(:Sn)/In Schottky diode at the room temperature (300 K). An abnormal decrease in the experimental BH Φ_b and an increase in the ideality factor n with a decrease in temperature have been explained by the barrier inhomogeneities at the metal-semiconductor interface. From the temperature-dependent I-V characteristics of the Au-Ge/InSe(:Sn)/In contact, that is, and A^* as 0.94 ± 0.02 and 0.58 ± 0.02 eV, and 27 ± 2 and 21 ± 1 (A/cm² K²), respectively, have been calculated from a modified versus 1/T plot for the two temperature regions. The Richardson constant values are about two times larger than the known value of 14.4 (A/cm² K²) known for n-type InSe. Moreover, in the temperature range 80-320 K, we have also discussed whether or not the current through the junction has been connected with TFE.     

Low-dimension self-interstitial diffusion in α-Zr

The mobility of self-interstitials in α-zirconium (α-Zr) is studied with molecular dynamic (MD) and molecular static (MS) simulations, using Ackland’s many-body inter-atomic potential. The basal crowdion configuration is found to be the ground state. Four types of diffusion jumps can be identified via MS, in-plane in-line, in-plane off-line, out-of-plane in-line and out-of-plane off-line. The in-plane migration is dominated by one-dimensional crowdion motion along the [110] directions, interrupted from time to time by off-line or out-of-plane jumps. Based on the MS results, the activation energies and pre-exponentials for the diffusion processes are determined by fits to the Arrhenius plots of D_c and D_a. The diffusional anisotropy factor D_c/D_a is also obtained, and compares well with experimental results. The mean frequency of each type of jumps is then found using Monte Carlo simulation, and is reported as a function of temperature. The mean lifetime and mean free path of the one-dimensional mobility are then obtained. The 1-D mean free path is found to be unimportant for sink separations involved under the usual irradiation damage conditions. Received: 4 March 2002 / Accepted: 4 April 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. E-mail: Chung.Woo@polyu.edu.hk     

Computational and experimental study of the cluster size distribution in MAPLE

A combined experimental and computational study is performed to investigate the origin and characteristics of the surface features observed in SEM images of thin polymer films deposited in matrix-assisted pulsed laser evaporation (MAPLE). Analysis of high-resolution SEM images of surface morphologies of the films deposited at different fluences reveals that the mass distributions of the surface features can be well described by a power-law, Y(N) ∝ N^−t, with exponent −t ≈ −1.6. Molecular dynamic simulations of the MAPLE process predict a similar size distribution for large clusters observed in the ablation plume. A weak dependence of the cluster size distributions on fluence and target composition suggests that the power-law cluster size distribution may be a general characteristic of the ablation plume generated as a result of an explosive decomposition of a target region overheated above the limit of its thermodynamic stability. Based on the simulation results, we suggest that the ejection of large matrix-polymer clusters, followed by evaporation of the volatile matrix, is responsible for the formation of the surface features observed in the polymer films deposited in MAPLE experiments.     

The conductance and capacitance-frequency characteristics of Au/pyronine-B/p-type Si/Al contacts

The rectifying junction characteristics of the organic compound pyronine-B (PYR-B) film on a p-type Si substrate have been studied. The PYR-B has been evaporated onto the top of p-Si surface. The barrier height and ideality factor values of 0.67 ± 0.02 eV and 2.02 ± 0.03 for this structure have been obtained from the forward bias current-voltage (I-V) characteristics. The energy distribution of the interface states and their relaxation time have been determined from the forward bias capacitance-frequency and conductance-frequency characteristics in the energy range of ((0.42 ± 0.02) − E_v)-((0.66 ± 0.02) − E_v) eV. The interface state density values ranges from (4.21 ± 0.14) × 10¹³ to (3.82 ± 0.24) × 10¹³ cm⁻² eV⁻¹. Furthermore, the relaxation time ranges from (1.65 ± 0.23) × 10⁻⁵ to (8.12 ± 0.21) × 10⁻⁴ s and shows an exponential rise with bias from the top of the valance band towards the midgap.