Spatially resolved Raman spectroscopy evaluation of residual stresses in 3C-SiC layer deposited on Si substrates with different crystallographic orientations

Raman scattering studies were performed on hot-wall chemical vapor deposited (heteroepitaxial) silicon carbide (SiC) films grown on Si substrates with orientations of (1 0 0), (1 1 1), (1 1 0) and (2 1 1), respectively. Raman spectra suggested that good quality cubic SiC single crystals could be obtained on the Si substrate, independent of its crystallographic orientation. Average residual stresses in the epitaxially grown 3C-SiC films were measured with the laser waist focused on the epilayer surface. Tensile and compressive residual stresses were found to be stored within the SiC film and in the Si substrate, respectively. The residual stress exhibited a marked dependence on the orientation of the substrate. The measured stresses were comparable to the thermal stress deduced from elastic deformation theory, which demonstrates that the large lattice mismatch between cubic SiC and Si is effectively relieved by initial carbonization. The confocal configuration of the optical probe enabled a stress evaluation along the cross-section of the sample, which showed maximum tensile stress magnitude at the SiC/Si interface from the SiC side, decreasing away from the interface in varied rate for different crystallographic orientations. Defocusing experiments were used to precisely characterize the geometry of the laser probe in 3C-SiC single crystal. Based on this knowledge, a theoretical convolution of the in-depth stress distribution could be obtained, which showed a satisfactory agreement with stress values obtained by experiments performed on the 3C-SiC surface.     

Determination of optical properties in nanostructured thin films using the Swanepoel method

We present the methodological framework of the Swanepoel method for the spectrophotometric determination of optical properties in thin films using transmittance data. As an illustrative case study, we determined the refractive index, thickness, absorption index, and extinction coefficient of a nanostructured 3 mol% Y₂O₃-doped ZrO₂ (yttria stabilized zirconia, 3YSZ) thin film prepared by the sol-gel method and deposited by dipping onto a soda-lime glass substrate. In addition, using the absorption index obtained with the Swanepoel method, we calculated the optical band gap of the film. The refractive index was found to increase, then decrease, and finally stabilize with increasing wavelength of the radiation, while the absorption index and extinction coefficient decreased monotonically to zero. These trends are explained in terms of the location of the absorption bands. We also deduced that this 3YSZ thin film has a direct optical band gap of 4.6 eV. All these results compared well with those given in the literature for similar thin films. This suggests that the Swanepoel method has an important role to play in the optical characterization of ceramic thin films.     

One convenient synthesis route to boron nitride nanotube

We describe one convenient synthesis route to boron nitride (BN) nanotube by the reaction of boron powder, iron oxide, and ammonium chloride at 600 °C for 12 h. Characterized by XRD, FTIR, XPS, TEM and SAED, the composition and morphology of the products are confirmed. The possible reaction mechanism is also discussed.     

Finite element simulation of pulsed laser ablation of titanium carbide

In the present paper, a 2D finite element model based on the heat-conduction equation and on the Hertz-Knudsen equation for vaporization was developed and used to simulate the ablation of TiC by Nd:YAG and KrF pulsed laser radiation. The calculations were performed for fluences of 8 and 10 J/cm², which according to experimental results obtained previously, correspond to large increases of the ablation rate. The calculated maximum surface temperature of the target for both lasers is higher than the estimated value of TiC critical temperature, corroborating the hypothesis that the increase of the ablation rate is explained by the explosive boiling mechanism.     

Age-induced phase transitions on mechanically alloyed amorphous GaSe

After aging it for four years at room temperature, a mechanically alloyed amorphous GaSe powder was transformed to a multi-phase crystalline alloy, where major phase is the trigonal Se one. The structural, thermal and optical properties of this aged amorphous GaSe were investigated through systematic X-ray diffraction, differential scanning calorimetry and Raman scattering measurements. The X-ray diffraction results on the aged GaSe powder suggest the presence of oxides, and X-ray absorption spectroscopy was employed to further investigate it.     

Single-Proton Pickup Reaction of the Halo Nucleus ^6He on a ^9Be Target at 25 MeV/nucleon

The inclusive differential cross sections of the ^7 Li nucleus in a reaction induced by ^6He on a ^9Be target are measured at an incident energy of 25 MeV/nucleon. Finite-range distorted-wave Born approximation calculations suggest that these ^7 Li particles are formed in a direct single-proton pickup reaction ^9Be（^6He,^7 Li）^8Li. The experimental data can be well reproduced by taking into account of the contributions of both the ground states and the first excited states of ^7Li and ^8Li.     

Investigation of phase-equivalent potentials by a halo transfer reaction

Using the supersymmetric quantum mechanics, we investigate the wave function-sensitive properties of the supersymmetric potentials which have received a lot of attention in the literature recently. We show that a superdeep potential and its phase-equivalent shallow-partner potential give very similar rms radius values for the weakly bound systems such as the deuteron and ¹¹Be nuclei. Although the corresponding eigenstates differ in the node-number, our investigation on the ¹¹Be(p, d )¹⁰Be single nucleon halo transfer reaction at 35 MeV show that also other physical quantities such as the cross-section angular distributions calculated using these wave functions reflect the nodal structure rather weakly. This lends support to two nearly equivalent treatments of the Pauli principle. Received: 15 May 2000 / Accepted: 14 September 2000     

From nitride to carbide: control of zirconium-based hard materials film growth and their characterization

High-quality thin films of ZrC_yN_1-y and the novel tribological material Zr_0.8Al_0.2C_yN_1-y have been grown by pulsed reactive crossed-beam laser ablation using Zr and Zr–Al ablation targets, respectively, and a pulsed gas. The gas mixture provided the carbon and nitrogen for the solid-solution films. Control of the stoichiometry (i.e. y) was determined by the relative partial pressures of the nitrogen- and carbon-containing gases. It was found that optimal control of the film chemistry was achieved by using the least thermally reactive gases. In this manner, it was possible to activate the gas species exclusively by collisions in the gas phase with the ablation-plume particles, thereby decoupling the chemistry from surface processes. The films were characterized for their chemical, crystallographic, optical, and tribological properties. All the films had very low impurity levels and a cubic rock salt crystal structure over the entire investigated temperature range between 100 and 600 °C. Exceedingly high quality epitaxial films could be grown on MgO (001) at 600 °C. Films grown on stainless steel were polycrystalline. The hardness of the films showed a maximum for both sets for stoichiometries predicted by a recent theoretical model for hardness based on band-structure calculations. In addition, all the films had an exceptionally low coefficient of friction versus steel. Received: 22 August 2001 / Accepted: 3 March 2002 / Published online: 19 July 2002     

Electrical properties and stability of Tb-doped zinc oxide-based nonlinear resistors

The microstructure, electric field-current density (E-J), capacitance-voltage (C-V), and stability characteristics of Zn-Pr-Co-Cr-Tb oxide-based nonlinear resistors were investigated for different Tb₄O₇ amounts. It increased in the range of 8.9-42.0 in the nonlinear coefficient and in the range of 1026-6514 V/cm in the breakdown field with increasing Tb₄O₇ amount. As Tb₄O₇ amount increased, the donor density decreased in the range of 1.23×10¹⁸-0.70×10¹⁸/cm³, whereas the barrier height at grain boundaries increased in the range of 0.73-0.93 eV. A good stability was obtained in the range of 0.25-0.5 mol% in Tb₄O₇ amount.