Magnetism and magneto-transport studies in sonochemically prepared amorphous Co100−xPtx nano alloys

Bulk amorphous Co_(100−x)Pt_x (0≤x≤50) nano-alloys have been synthesized using high frequency ultrasound, displaying single domain (4-5 nm) behavior wherein weakly exchange-coupled particles lead to a field-dependent resistivity behavior. Magneto-resistivity is correlated to the order-disorder parameter in these powder compacts. The plot of Δρ/ρ₀ as a function of reduced magnetization indicates that all the systems are weakly exchange coupled.     

Constraints on an asymptotic safety scenario for the Wess–Zumino model

Using the nonrenormalization theorem and Pohlmeyer's theorem, it is proven that there cannot be an asymptotic safety scenario for the Wess–Zumino model unless there exists a non-trivial fixed point with (i) a negative anomalous dimension (ii) a relevant direction belonging to the Kähler potential.     

Transfer reactions and sub-barrier fusion in 40Ca + 90, 96Zr

The two systems ⁴⁰Ca + ^90,96Zr have been studied by measuring nucleon transfer reactions at two energies near the Coulomb barrier, thus complementing the available sub-barrier fusion cross-sections. Angular distributions for various transfer channels have been determined. Significantly larger neutron transfer cross-sections are found for the target ⁹⁶Zr that exhibits the larger enhancement in the sub-barrier fusion cross-sections. All data have been analyzed with a new model for heavy-ion collisions that calculates simultaneously transfer cross-sections, fusion excitation functions and barrier distributions. The model gives a good account of both transfer and fusion data. Received: 2 May 2002 / Accepted: 4 June 2002 / Published online: 26 November 2002 RID="a" ID="a"e-mail: montagnoli@pd.infn.it, Fax +39049 8277102, Tel. +39049 8277117. RID="b" ID="b"On leave from the China Institute for Atomic Energy, 102413 Beijing, China. Communicated by C. Signorini     

Optimization of Metamorphic InGaAs Quantum Wells on GaAs Grown by Molecular Beam Epitaxy

We investigate the molecular beam epitaxy growth of metamorphic InxGal-xAs materials （x up to 0.5） on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical qualdty. The optimized structures have an average surface roughness of 0.9-1.8 nm. It is also proven by PL measurements that the optical properties of high indium content （55%） InGaAs quantum wells are improved apparently by defect reduction technique and by introducing Sb as a surfactant. These provide us new ways for growing device quality metamorphic structures on GaAs substrates with long-wavelength emissions.     

GSI experiments on synthesis and nuclear structure investigations of the heaviest nuclei

Isotopes of elements up to Z = 113 have been synthesized using medium heavy projectiles and target nuclei around doubly magic ²⁰⁸Pb. Synthesis of still heavier elements in reactions of ⁴⁸Ca projectiles with actinide target nuclei has been reported. To obtain more information about production mechanism of transfermium isotopes nuclear reaction studies including investigations of massive transfer were resumed at SHIP, GSI. Nuclear structure investigations at SHIP have been concentrated so far mainly on systematic investigations of low lying Nilsson levels in odd-mass nuclei. Recently this field has been extended to decay studies of isomeric states in nobelium nuclei at E^* > 1 MeV.     

Anomalous electrical transport properties of Ag/Al bilayers grown on Si by molecular beam epitaxy

We have investigated the temperature dependent electrical resistivity, ρ(T), of Ag(100 nm)/Al(10 nm) bilayers grown on Si(111) and quartz substrates using molecular beam epitaxy (MBE). Bilayers grown on Si exhibited an anomalous negative temperature coefficient of resistivity (TCR) in the temperature range of 140-165 K of the ρ(T) plot. However, at temperatures below and above this negative TCR region, ρ(T) exhibited a characteristic positive TCR of metallic alloys. No such resistive anomaly was observed for the bilayers grown on quartz substrates. The observed resistive anomaly could be qualitatively explained by assuming two parallel conduction channels, that is, one at the interface having high Si content and obeying the polaronic behavior at <165 K and another far away from the interface having almost no Si impurity and thus exhibiting pure metallic behavior down to 4 K. In addition, bilayers exhibited a sharp resistive transition at ∼6.5 K, indicating a possibility of a new Ag-Al alloy being a superconducting material.     

Effect of Reactor Pressure on Qualities of GaN Layers Grown by Hydride Vapour Phase Epitaxy

The influence of reactor pressure on GaN layers grown by hydride vapour phase epitaxy （HVPE） is investigated. By decreasing the reactor pressure from0. 7 to 0.5 mm, the GaN layer growth mode changes from the island-like one to the step flow. The improvements in structural and optical properties and surface morphology of GaN layers are observed in the step flow growth mode. The results clearly indicate that the reactor pressure, similarly to the growth temperature, is One of the important parameters to influence the qualities of GaN epilayers grown by HVPE, due to the change of growth mode.     

Ordered InAs Quantum Dots with Controllable Periods Grown on Stripe-Patterned GaAs Substrates

GaAs （001） substrates are patterned by electron beam lithography and wet chemical etching to control the nucleation of lnAs quantum dots （QDs）. InAs dots are grown on the stripe-patterned substrates by solid source molecular beam epitaxy. A thick buffer layer is deposited on the strip pattern before the deposition of InAs. To enhance the surface diffusion length of the In atoms, InAs is deposited with low growth rate and low As pressure. The AFM images show that distinct one-dimensionally ordered InAs QDs with homogeneous size distribution are created, and the QDs preferentiMly nucleate along the trench. With the increasing amount of deposited InAs and the spacing of the trenches, a number of QDs are formed beside the trenches. The distribution of additional QDs is long-range ordered, always along the trenchs rather than across the spacing regions.     

Single-Proton Pickup Reaction of the Halo Nucleus ^6He on a ^9Be Target at 25 MeV/nucleon

The inclusive differential cross sections of the ^7 Li nucleus in a reaction induced by ^6He on a ^9Be target are measured at an incident energy of 25 MeV/nucleon. Finite-range distorted-wave Born approximation calculations suggest that these ^7 Li particles are formed in a direct single-proton pickup reaction ^9Be（^6He,^7 Li）^8Li. The experimental data can be well reproduced by taking into account of the contributions of both the ground states and the first excited states of ^7Li and ^8Li.     

Bi induced step-flow growth in the homoepitaxial growth of Au(1 1 1)

Homoepitaxial growth of Au on Bi-covered Au(1 1 1) was studied at room temperature using reflection high-energy electron diffraction (RHEED) and Auger electron spectroscopy (AES). From observations of RHEED it is found that the Au(1 1 1) (23 × 1) reconstruction structure changes to a (1 × 1) by about 0.16-0.5 ML deposition of Bi and to a (2√3 × 2√3)R30° by about 1.0 ML deposition of Bi, respectively. The surface morphology evolution by Bi deposition leads to a change of Au homoepitaxial growth behavior from layer-by-layer to step flow. This indicates that the surface diffusion distance of Au atoms on the Bi-precovered (1 × 1) and (2√3 × 2√3)R30° surfaces is longer than that on the Au(1 1 1) (23 × 1) clean surfaces. A strong surface segregation of Bi was found at top of surface. It is concluded that Bi atoms acted as an effective surfactant in the Au homoepitaxial growth by promoting Au intralayer mass transport.