Diamagnetic susceptibility of hydrogenic donor impurity in low-dimensional semiconducting systems

The binding energies of a hydrogenic donor both in the parabolic and non-parabolic conduction band model within the effective mass approximation have been computed for the low-dimensional semiconducting systems (LDSS) like quantum well, quantum well wire and quantum dot taking GaAs/Al_xGa_1−xAs systems as an example. It is observed that the effect of non-parabolicity is not effective when the system goes to lower dimensionality. The diamagnetic susceptibility of a hydrogenic donor impurity has also been computed in these LDSS in the infinite barrier model. Since no theoretical or experimental works on the diamagnetic susceptibility of LDSS are available in the literature, as a realistic case the diamagnetic susceptibility has been computed in the finite barrier model (x=0.3) for a quantum well and the results are discussed in the light of semiconductor-metal transition.     

Characteristics of transmission of electrons in a quantum wire tangentially attached to a superconductor ring threaded by magnetic flux

We present numerical investigations of the transmission properties of electrons in a normal quantum wire tangentially attached to a superconductor ring threaded by magnetic flux. A point scatterer with a δ -function potential is placed at node to model scattering effect. We find that the transmission characteristics of electrons in this structure strongly depend on the normal or superconducting state of the ring. The transmission probability as a function of the energy of incident electrons, in the case of a superconductor ring threaded by one quantum magnetic flux, emerges one deep dip, imposed upon the first broad bump in spectrum. This intrinsic conductance dip originates from the superconductor state of the ring. When increasing the magnetic flux from one quantum magnetic flux to two, the spectrum shifts toward higher energy region in the whole. This conductance dip accordingly shifts and appears in the second bump. In the presence of a point-scatterer at the node, the spectrum is substantially modified. Based on the condition of the formation of the standing wave functions in the ring and the broken of the time-reserve symmetry of Schr?dinger equation after switching magnetic flux, the characteristics of transmission of electrons in this structure can be well understood. Received 6 November 2001     

Hadroproduction experiments for precise neutrino beam calculations

The discovery of the neutrino oscillation pattern with solar and atmospheric neutrinos has stimulated systematic studies with long-baseline accelerator experiments. Precise neutrino beamline calculations have demonstrated the importance and paucity of existing hadroproduction data needed to shape the primary meson production in targets and tune available Monte Carlo codes for hadronic shower simulation. After a brief introduction to the physics of neutrino beams, available hadron production data will be reviewed with regards to their parametrization. Fast simulations based on such parameterizations and full Monte Carlo simulations of neutrino beamlines will then be illustrated. The prospective impact of new hadroproduction experiments, such as HARP at CERN and MIPP at Fermilab, will be shown together with some neutrino beamline simulations.     

A comparison between optically active CdZnSe/ZnSe and CdZnSe/ZnBeSe self-assembled quantum dots: effect of beryllium

The composition and size of optically active Cd_xZn_1−xSe/ZnSe quantum dots are estimated with a previously developed method. The results are then compared with those obtained for Cd_xZn_1−xSe/Zn_0.97Be_0.03Se QDs. We show that introducing Be into the barrier material enhances both Cd composition and quantum size effect of optically active quantum dots.     

Oscillator strength of a two-dimensional D ion in magnetic fields

In the present paper we determine the oscillator strength of two-dimensional (2D) D⁻ ions under the influence of a static magnetic field. The results are important for the analysis of the optical transitions observed in semiconductor quantum wells. We have applied the ab initio procedure Hyperspherical Adiabatic Approach, based on the use of hyperspherical coordinates. This approach uses an adiabatic separation of the total wave function that allows accurate energies determination from molecular-like potential curves. The convergence is obtained in a systematic way by the inclusion of non-adiabatic couplings without the need of adjustable parameters.     

Atomically precise self-assembly of one-dimensional structures on silicon

This work has three main themes: (1) fabricate atomically precise nanostructures at surfaces, particularly nanowires consisting of atom chains; (2) explore the behavior of one-dimensional electrons in atomic chains; (3) find the fundamental limits of data storage using an atomic scale memory. Semiconductor surfaces lend themselves towards self-assembly, because the broken covalent bonds create elaborate reconstruction patterns to minimize the surface energy. An example is the large 7 × 7 unit cell on Si(1 1 1), which can be used as building block. On semiconductors, the surface electrons completely de-couple from the substrate, as long as their energy lies in the band gap. Angle-resolved photoemission reveals surprising features, such as a fractional band filling and a spin-splitting at a non-magnetic surface. An interesting by-product is a memory structure with self-assembled tracks that are five atom rows wide and store a bit by the presence or absence of a single silicon atom. This toy memory is used to test the fundamental limits of data storage and to see how storage on silicon compares to storage in DNA.     

Formation process for and strain effect in InAs quantum dots grown on GaAs substrates by using molecular beam epitaxy

Reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM) measurements were used to investigate the dependences of the formation process and the strain on the As/In ratio and the substrate temperature of InAs quantum dots (QDs) grown on GaAs substrates by using molecular beam epitaxy. The thickness of the InAs wetting layer and the shape and the size of the InAs QDs were significantly affected by the As/In ratio and the substrate temperature. The strains in the InAs layer and the GaAs substrate were studied by using RHEED patterns. The magnitude in strain of the InAs QDs formed at a low substrate temperature was larger than that in InAs QDs grown at high substrate temperature. The present results can help to improve the understanding of the formation process and the strain effect in InAs QDs.     

一阶导数分光光度法测定血中一氧化碳含量的研究

本文通过理论推导及实验证明CO饱和血与正常血一阶导数的振幅高度比为一常数。将CO中毒检血氨稀释液取一半通CO至饱和,与另一半分别加入Na_2S_2O_4后在500～600nm测定一阶导数光谱在579nm处量出振幅值经计算可得CO在血中含量。     

Bone-ablation mechanism using CO2 lasers of different pulse duration and wavelength

Bone ablation using different pulse parameters and four emission lines of 9.3, 9.6, 10.3, and 10.6 m of the CO₂ laser exhibits effects which are caused by the thermal properties and the absorption spectrum of bone material. The ablation mechanism was investigated with light- and electron-microscopy at short laser-pulse durations of 0.9 and 1.8 s and a long pulse of 250 s. It is shown that different processes are responsible for the ablation mechanism either using the short or the long pulse durations. In the case of short pulse durations it is shown that, although the mineral components are the main absorber for CO₂ radiation, water is the driving force for the ablation process. The destruction of material is based on explosive evaporation of water with an ablation energy of 1.3 kJ/cm³. Histological examination revealed a minimal zone of 10–15 m of thermally altered material at the bottom of the laser drilled hole. Within the investigated spectral range we found that the ablation threshold at 9.3 and 9.6 m is lower than at 10.3 and 10.6 m. In comparison the ablation with a long pulse duration is determined by two processes. On the one side, the heat lost by heat conduction leads to carbonization of a surface layer, and the absorption of the CO₂ radiation in this carbonized layer is the driving force of the ablation process. On the other side, it is shown that up to 60% of the pulse energy is absorbed in the ablation plume. Therefore, a long pulse duration results in an eight-times higher specific ablation energy of 10 kJ/cm³.     

新型大分子席夫碱配合物的合成和表征

本文用胺基封端聚四氢呋喃(Mn=862)与水杨醛反应，生成新型席夫碱遥爪配体，再与金属离子(Fe³⁺, Co²⁺, Cu²⁺)反应，得到新型大分子席夫碱配合物。用IR、ESR、UV、循环伏安法、拉伸和动态粘弹谱等表征手段对配合物进行了研究。证明所得配合物的配位结构与血红蛋白分子的功能片段的配位结构相似，钴配合物具有与血红蛋白分子相近的可逆化学吸附功能。