Small and high-density GeSiC dots stacked on buried Ge hut-clusters in Si

Self-assembled GeSiC dots stacked on a Ge hut-cluster layer buried in Si have been investigated. The critical thickness for formation of GeSiC dots is reduced owing to the strain fields from the buried hut-clusters. By utilizing the stacked structure, the dot size is decreased and the uniformity is improved. The highest density of the GeSiC dots with stacked structures is 7.4×10¹⁰ cm⁻², which is six times larger than that of single GeSiC dots. The formation of the self-assembled GeSiC dots is strongly influenced by being stacked with buried Ge dots as well as C incorporation.     

19.6nm波长类氖锗X光激光光源理论模拟

 波长19.6nm的类氖锗X光激光适合作为诊断激光等离子体界面不稳定性的光源。用经过实验检验的系列程序对预-主短脉冲驱动类氖锗进行了系统的优化设计和理论分析。采用2%~3%的预脉冲强度，6~8ns的预-主脉冲时间间隔，在4×10¹³W/cm²功率密度驱动下, 波长19.6nm增益区的宽度可以超过60μm，增益区的维持时间可以达到90ps。对于16mm长的平板靶，增益系数可达11.8/cm；弯曲靶增益系数可达13.3/cm；单靶小增益长度积可达21.3，单靶就可以获得饱和增益。采用双靶对接，其小讯号增益可达38.4，可以获得深度饱和增益，能满足应用演示所需的X光激光光源。     

Complex impedance spectra of chip inductor using Li–Zn–Cu–Mn ferrite

A multi-layer chip inductor (MCI) was fabricated using polycrystalline Li–Zn–Cu–Mn ferrite and the green-sheet technique, and its complex impedance spectrum was evaluated with the help of numerical calculations. The complex impedance spectra of the MCI component using Ni–Zn–Cu ferrite, which have been widely used for this application, were very sensitive to the residual stress and deviated much from the calculated values; however, it was found that the complex impedance spectrum of the MCI component using Li–Zn–Cu–Mn ferrite is quite well reproduced by calculation, where the complex permittivity and permeability of the polycrystalline ferrite as well as the MCI dimensions, were used. It implied that the magneto-striction effect was negligible in case of MCI using Li–Zn–Cu–Mn ferrite, and that the difference was related to magneto-strictive coefficient of the polycrystalline ferrite. Consequently, utilization of Li–Zn–Cu–Mn ferrite enabled us to easily design the complex impedance of MCI component.     

Divergence-free WKB theory

We present a divergence-free WKB theory, which is a new semiclassical theory modified by nonperturbative quantum corrections. Conventionally, the WKB theory is constructed upon a trajectory that obeys the bare classical dynamics expressed by a quadratic equation in momentum space. Contrary to this, the divergence-free WKB theory is based on a higher-order algebraic equation in momentum space, which represents a dressed classical dynamics. More precisely, this higher-order algebraic equation is obtained by including quantum corrections to the quadratic equation, which is the bare classical limit. An additional solution of the higher-order algebraic equation enables us to construct a uniformly converging perturbative expansion of the wavefunction. Namely, our theory removes the notorious divergence of wavefunction at a turning point from the WKB theory. Moreover, our theory is able to produce wavefunctions and eigenenergies more accurate than those given by the traditional WKB method. In addition, the divergence-free WKB theory that is based on the cubic equation allows us to construct a uniformly valid wavefunction for the nonlinear Schrödinger equation (NLSE). A recent short letter [T. Hyouguchi, S. Adachi, M. Ueda, Phys. Rev. Lett. 88 (2002) 170404] is the opening of the divergence-free WKB theory. This paper presents full formalism of this theory and its several applications concerning wavefunction and eigenenergy to show that our theory is a natural extension of the traditional WKB theory that incorporates nonperturbative quantum corrections.     

Experimental evidence for anisotropic response of a driven vortex lattice

We present kinetic inductance measurements in current driven Josephson junction arrays. Measurements performed with circular coils indicate that this technique is very sensitive to the vortex mobility. Results obtained with anisotropic detection coils provide experimental evidence for the anisotropic response of a driven vortex lattice. Anisotropic behavior is obtained when rising the temperature or the mean vortex velocity as indicated by the loss of the superconducting shielding capability, first in the direction of vortex motion and then in the perpendicular direction.     

Scale-free behavior of the Internet global performance

Measurements and data analysis have proved very effective in the study of the Internet's physical fabric and have shown heterogeneities and statistical fluctuations extending over several orders of magnitude. Here we focus on the relationship between the Round-Trip-Time (RTT) and the geographical distance. We define dimensionless variables that contain information on the quality of Internet connections finding that their probability distributions are characterized by a slow power-law decay signalling the presence of scale-free features. These results point out the extreme heterogeneity of Internet delay since the transmission speed between different points of the network exhibits very large fluctuations. The associated scaling exponents appear to have fairly stable values in different data sets and thus define an invariant characteristic of the Internet that might be used in the future as a benchmark of the overall state of “health” of the Internet. Received 25 January 2003 Published online 7 May 2003     

Memory Effect in Ceramic Superconductors

We measured the time decay of the magnetic moment of high T_c superconductors YBa₂Cu₃O_7-δ ceramic samples and found the memory effect which has hitherto been reported only in single crystals. The temperature and field ranges, especially the memory phenomenon in ceramic samples at liquid nitrogen temperature can only be understood in a combined picture of both flux creep and glass behaviour     

A structural study of CN treated amorphous silicon

Recently, a remarkable technique to overcome the problem of light-induced degradation in amorphous silicon (a-Si) solar cells using a cyanide (CN) treatment has been developed. Structural and bonding characteristics of CN in a-Si has been studied using ab initio molecular dynamics simulations. It was found that CN incorporation results in more than just the termination of dangling bonds. The connectivity of the covalent random network increases because the CN changes from triply bonded, which is a common form in molecular CN, to the singly bonded form. This may be the mechanism by which CN incorporation produces significant reductions in light-induced degradation.     

SiGe (Ge-dot) heterojunction phototransistors for efficient light detection at 1.3–1.55 μm

The aim of this work is to develop a Si/SiGe HBT-type phototransistor with several Ge dot layers incorporated in the collector, in order to obtain improved light detectivity at 1.3–1.55 μm. The MBE grown HBT detectors are of n–p–n type and based on a multilayer structure containing 10 Ge-dot layers (8 ML in each layer, separated by 60 nm Si spacer) in the base-collector junction. The transistors were processed for normal incidence or with waveguide geometry where the light is coupled through the edge of the sample. The measured breakdown voltage, BV_ceo, was about 6 V. Compared to a p–i–n reference photodiode with the same dot layer structure, photoconductivity measurements show that the responsivity is improved by a factor of 60 for normal incidence at 1.3 μm. When the light is coupled through the edge of the device, the detectivity is even further enhanced. The measured photo-responsivity is more than 100 and 5 mA/W at 1.3 and 1.55 μm, respectively.