The energy and structure of (0 0 1) twist grain boundary in noble metals

The relaxed energy and structure of (0 0 1) twist grain boundary (GB) in noble metals Au, Ag and Cu are simulated by the MAEAM. In-boundary translation between two adjacent grains results in a periodic energy variation and the period is a square with the side length L_Σ/Σ. The lowest energy appears when the two grains are translated relatively to either corner or center of the periodic square. The relaxed GB energy increases smoothly for low-angle boundaries and levels off for larger-angle boundaries except a cusp appeared at θ = 36.87° (Σ = 5). After relaxation, the symmetry of the GB structure is not changed but the displacement of the atoms parallel to the GB plane decreases with increasing the distance of the atoms from the GB plane.     

Study on structure change of carbon nanotubes depending on different reaction gases

Aligned carbon nanotubes were grown by plasma-enhanced hot filament chemical vapor deposition using different reaction gases and they were investigated by scanning electron microscopy and transmission electron microscopy. It is found that the hollow carbon nanotubes were formed using methane and hydrogen as the reaction gases, but the bamboo-structured carbon nanotubes were grown when ammonia was added into the reaction gases, indicating that the structure of the aligned carbon nanotubes was changed depending on different reaction gases. On setting of diffusion of carbon, the effects of the nitrogenous gas on the structure change of carbon nanotubes are studied.     

Surface functionalisation of polymer nanofibres by sputter coating of titanium dioxide

The surface properties of nanofibres are of importance in various applications. In this work, electrospun polyamide nanofibres were used as substrates for creating functional nanostructures on the nanofibre surfaces. A RF magnetron sputter coating was used to deposit the functional layer of titanium dioxide (TiO₂) onto the nanofibres. Atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and environmental scanning electron microscopy (ESEM) were employed to study the topography, grain structure and wetting of the nanofibre surfaces, respectively. The AFM results indicated a significant difference in the morphology of the nanofibres before and after the TiO₂ sputter coating. The XRD analysis showed the amorphous structures of the TiO₂ deposition layer. XPS spectra reflected the chemical features of the deposited nanostructures. The ESEM observation revealed that the surface wettability of TiO₂ sputter coated nanofibres was significantly improved after UV irradiation.     

On the linear relaxation of a one-dimensional bonded fluid model

The linear relaxation of a one-dimensional bonded fluid model is studied in the dynamical mean field approximation at the pair level. The results are compared with simulation data. Relaxation at low temperatures shows a cooperative character that can be understood in terms of a simple diffusion picture.     

Study on effects of substrate temperature on growth and structure of alignment carbon nanotubes in plasma-enhanced hot filament chemical vapor deposition system

Alignment carbon nanotubes (ACNTs) were synthesized on silicon substrate coated with Ni catalyst film and Ta buffer layer by plasma-enhanced hot filament chemical vapor deposition using CH₄, NH₃, and H₂ as the reaction gas, and they were investigated by scanning electron microscopy and transmission electron microscopy. It is found that the diameter of the bamboo-structured ACNTs is increased from 62 to 177 nm when the substrate temperature was changed from 626 to 756 °C. Their growth rate is enhanced by the substrate temperature in a range of 626-683 °C and it is reversely reduced with the substrate temperature after the substrate temperature is over 683 °C. Beginning with wetting phenomenon, the effects of the substrate temperature on the structure and growth rate of the ACNTs are analyzed.     

The effect of fluorine-based plasma treatment on morphology and chemical surface composition of biocompatible silicone elastomer

X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) have been used to investigate the effect of reactive ion etching (RIE) on poly(methylhydrogensiloxane-co-dimethylsiloxane) surface in fluorine-based plasmas. Polysiloxane layers supported on the standard silicon wafers were etched using SF₆ + O₂ or CF₄ + O₂ plasmas. SEM studies show that the polysiloxane morphology depends on plasma chemical composition strongly. Presence of a columnar layer likely covered with a fluorine rich compound was found on the elastomer surface after the CF₄ + O₂ plasma exposure. After the SF₆ + O₂ or CF₄ + O₂ plasma treatment the polysiloxane surface enriches with fluorine or with fluorine and aluminum, respectively. Different morphologies and surface chemical compositions of the silicone elastomer etched in both plasmas indicate different etching mechanisms.     

Laser projection-patterned etching of (100) GaAs by gaseous HCl and CH3Cl

Laser projection-patterned etching of GaAs in a HCl and CH₃Cl atmosphere performed using a pulsed KrF-excimer laser (=248 nm, =15 ns) and deep-UV projection optics (resolution 2 m) is reported. The etching process carried out in a vacuum system having a base pressure of 10^–6 mbar is shown to result from a purely thermochemical reaction. Etching takes place in two steps: (i) between the laser pulses, the etchant gas reacts with the GaAs surface-atomic layer to form chlorination products (mainly As and Ga monochlorides), (ii) local laser surface heating results in the desorption of these products allowing further reaction of the gas with the surface. The influence of the etching parameters (laser energy density, gas pressure and pulse repetition rate) on the etch rate and the morphology of the etched features was studied. Etch rates up to 0.15 nm per pulse, corresponding to the removal of 0.5 GaAs molecular layer, are achieved. The spatial resolution of the etching process is shown to be controlled by the heat spread in the semiconductor and by the nonlinear dependence of the etch rate on the surface temperature. As a result, etched features smaller or larger than the projected features of the photomask are achieved depending on the laser energy density. Etched lines having a width of 1.3 m were obtained at low fluences by the projection of 2 m wide lines onto the GaAs surface.     

Laser chemical processing of magnetic materials for recording-head application

A laser-induced thermochemical reaction has been used to etch single crystalline magnetic ferrite for industrial application to recording-head processing. Scanning focused Ar-ion laser irradiation to ferrite in flowing aqueous solutions of KOH or H₃PO₄ resulted in etch rates of 350–400 m/s with aspect ratios of up to 40. Metal-In-Gap (MIG) head structures with Sendust (FeAlSi) have been successfully fabricated using laser chemical processing. The MIG head fabricated by laser chemical processing showed better performance than that by conventional mechanical machining.Presented at LASERION '93, June 21–23, 1993 München (Germany)     

Laser nitriding of iron: Influence of the laser parameters on the nitriding efficiency

Laser nitriding of Armco iron in nitrogen was studied for KrF-excimer-laser irradiation. The influence of the energy density and number of pulses on the nitrogen take-up and the nitride phases formed was investigated using Resonant Nuclear Reaction Analysis (RNRA) and Mössbauer spectroscopy. Besides the original a-iron, austenite-Fe(N), martensite-Fe(N),-Fe₂₊N, and-Fe₁₆N₂ were identified. The fraction of the e-phase was found to increase with the number of pulses and the energy density. A threshold energy density of 1.8(2) J/cm² for the laser nitriding process was found.