First-principles studies of kinetics in epitaxial growth of III–V semiconductors

We demonstrate how first-principles calculations using density-functional theory (DFT) can be applied to gain insight into the molecular processes that rule the physics of materials processing. Specifically, we study the molecular beam epitaxy (MBE) of arsenic compound semiconductors. For homoepitaxy of GaAs on GaAs (001), a growth model is presented that builds on results of DFT calculations for molecular processes on the β2-reconstructed GaAs (001) surface, including adsorption, desorption, surface diffusion, and nucleation. Kinetic Monte Carlo simulations on the basis of the calculated energetics enable us to model MBE growth of GaAs from beams of Ga and As₂ in atomistic detail. The simulations show that island nucleation is controlled by the reaction of As₂ molecules with Ga adatoms on the surface. The analysis reveals that the scaling laws of standard nucleation theory for the island density as a function of growth temperature are not applicable to GaAs epitaxy. We also discuss heteroepitaxy of InAs on GaAs (001), and report first-principles DFT calculations for In diffusion on the strained GaAs substrate. In particular, we address the effect of heteroepitaxial strain on the growth kinetics of coherently strained InAs islands. The strain field around an island is found to cause a slowing down of material transport from the substrate towards the island, and thus helps to achieve more homogeneous island sizes. Received: 2 May 2001 / Accepted: 23 July 2001 / Published online: 3 April 2002     

Ground state pressure and energy density of an interacting homogeneous Bose gas in two dimensions

We consider an interacting homogeneous Bose gas at zero temperature in two spatial dimensions. The properties of the system can be calculated as an expansion in powers of g, where g is the coupling constant. We calculate the ground state pressure and the ground state energy density to second order in the quantum loop expansion. The renormalization group is used to sum up leading and subleading logarithms from all orders in perturbation theory. In the dilute limit, the renormalization group improved pressure and energy density are expansions in powers of the T ^2B and T ^2Bln(T ^2B), respectively, where T ^2B is the two-body T-matrix. Received 19 April 2002 Published online 13 August 2002     

Observation on meta-stability of thulium nitrate crystal by using electric measurements

Frequency dependence of ac conductivity from 1 to 10⁵ Hz and time series of the conductivity at 2 kHz were measured along c-axis of thulium nitrate crystal, Tm(NO₃)₃6H₂O at temperatures from 203.15 to 293.15 K. The meta-stability was observed. The frequency spectra of the conductivity were similar to those in disorder system. Aging effect was observed. Non-periodic instability (burst) was found. Non-linear dynamical property was characterized by 1/f noise spectrum, limit cycle in return map and dependence of correlation exponent on embedding dimension.     

Simulation of island aggregation influenced by substrate temperature, incidence kinetic energy and intensity in pulsed laser deposition

Using kinetic Monte Carlo method, we have simulated a pulsed energetic growth process in pulsed laser deposition. During the growth of film, substrate temperature mainly influences upon film morphology by directly enhancing the adatom mobility through the temperature-dependent thermal vibration. By contrast, the effect of incidence kinetic energy on film growth is complex resulting from the collisions between the incident particles and the adatoms. The results show that improving incident kinetic energy cannot significantly accelerate the migration rate of adatom but change surface microstructure and promote single adatom formation resulting in more island aggregation density. Moreover, since pulse-influx characterizes pulsed laser deposition, the intensity per pulse contributes to the evolvement of nucleation density and the results illustrate that a general scaling law different from ordinary power law still exists in energetic growth of pulsed laser deposition.     

Control of the interfacial reactivity in the Ni/Si system

The reactivity at the Ni/Si interface is studied as a function of the sputtering conditions of the nickel film. Four systems are considered, by combining two different sputtering rates and two distinct base pressures for the deposition of the nickel 10 nm-thick film. The formation of Ni₂Si is revealed at the four interfaces by an X-ray emission spectroscopy study of the interfacial Si 3p occupied valence states. Increasing the sputtering rate is herein evidenced to decrease the quantity of silicide formed at the interface. Moreover, the combination of a high sputtering rate and a low base pressure advantageously prevents against the oxidization of the silicon surface during the metal deposition.     

On the correlation between order parameter, superconducting volume fraction and critical current density in R: 123 superconductors

Resistivity and low field ac susceptibility measurements are made on R: 123 superconducting samples with different rare earth elements R. The order parameter dimensionality OPD is deduced from resistivity versus temperature plot using the Aslamazov and Larkin expression, while the analysis of the temperature dependence of ac susceptibility is done employing Beans’ critical state model and with the help of the Ravi expression. With increasing R, the critical temperatures T_c are nearly kept constant (∼90 K), while the crossover temperatures T_o are shifted to lower values. Moreover, the superconducting order parameter OPD is shifted toward 2D behavior. On the other hand, the values of superconducting volume fraction f_g decrease with increasing ac field amplitude H_m for all samples and it is higher in Er: 123 sample than in Nd: 123 sample. Although the values of critical current density J_c at the peak temperature T_m are nearly unchanged with increasing R, the values of J_c(T), at T<T_m and T>T_m, are found to be dependent on the chosen R. The correlation between the above calculated parameters against R is also mentioned.     

Synthesis and phase transition of Li-Mn-O spinels with high Li/Mn ratio by thermo-decomposition of LiMnC2O4(Ac)

LiMnC₂O₄(Ac) precursor in which Li⁺ and Mn²⁺ were amalgamated in one molecule was prepared by solid-state reaction at room-temperature using manganese acetate, lithium hydroxide and oxalic acid as raw materials. By thermo-decomposition of LiMnC₂O₄(Ac) at various temperatures, a series of Li_1+y[Mn_2−xLi_x]_16dO₄ spinels were prepared with Li₂MnO₃ as impurities. The structure and phase transition of these spinels were investigated by XRD, TG/DTA, average oxidation state of Mn and cyclic voltammeric techniques. Results revealed that the Li-Mn-O spinels with high Li/Mn ratio were unstable at high temperature, and the phase transition was associated with the transfer of Li⁺ from octahedral 16c sites to 16d sites. With the sintering temperature increasing from 450 to 850 °C, the phase structure varied from lithiated-spinel Li₂Mn₂O₄ to Li₄Mn₅O₁₂-like to LiMn₂O₄-like and finally to rock-salt LiMnO₂-like. A way of determining x with average oxidation state of Mn and the content of Li₂MnO₃ was also demonstrated.     

Structural,thermal, optical and conductivity studies of Co/ZnO nanoparticles doped CMC polymer for solid state battery applications

In this study, a simple chemical precipitation method was used to synthesize ZnO: Co²⁺ as nanoparticles. The solution casting technique was used for the preparation of polymer films of Carboxymethyl cellulose (CMC) doped with different contents (0.5, 1.5, 3, and 5 wt%) of ZnO/Co NPs. As shown by the X-ray diffraction, the average size of ZnO/Co crystallite of the NPs is 25.6 nm. Meanwhile, the addition of ZnO/Co reduced the semi-crystallinity of CMC. The Fourier transform infrared (FTIR) confirmed the interaction between the ZnO/Co NPs and the polymer CMC. The direct and indirect band gap (Eg) was reduced from (5.32–5.01 eV and 5.20 to 4.99 eV respectively) with the increase in ZnO/Co NPs content up to 3 wt% after this content the Eg is increased as shown by the UV–Vis spectra. In addition, the results of TGA displayed the decomposition of the nanocomposite to be little compared to that of the pure CMC indicating the success of fabrication of products. The improvement of the ionic conductivity was noticed upon the addition of ZnO/Co NPs into the polymer CMC system which can be explained in terms of an increase in amorphicity as shown by the impedance spectroscopic study. It was found that the optimum ionic conductivity (3.209 × 10⁻⁶ Scm⁻¹) at ambient temperature was higher for the sample containing 1.5 wt% ZnO/Co NPs with highest of amorphicity and the lowest total loss of weight. Therefore, the improvements in optical properties, thermal stability, and AC conductivity which were observed represent a strong support for the use of the nanocomposite films in the solid state battery applications.     

Verbindungsbildung in den quasi-binären Systemen AcX4?MX2 (Ac = Th,U; M = Ca,Sr, Ba,Eu, Ge,Sn, Pb; X = Br,I)

Formation of Compounds in the Quasi-binary Systems AcX₄? MX₂ (Ac = Th, U; M = Ca, Sr, Ba, Eu, Ge, Sn, Pb; X = Br, I) T,x-phase diagrams of the systems ThI₄? SnI₂, ThI₄? PbI₂, ThI₄? CaI₂, and ThI₄? SrI₂ were established using thermoanalysis and x-ray methods. The only ternary compounds have a 1:1 composition. Further AcMX₆ compounds (Ac: Th, U; M: Ca, Sr, Ba, Eu, Ge, Sn, Pb; X: Br, I) were synthesized and their structures investigated. Four structure types are found depending on the temperature and the Ac/M combinations. The structures of γ-ThSnI₆ and β-ThSnI₆ were determined with single crystal methods as representatives of a whole series of isotypic compounds.