Itinerant to relocalized transition of f electrons in the Kondo insulator CeRu4Sn6

The three-dimensional electronic structure and the nature of Ce 4f electrons of the Kondo insulator CeRu₄Sn₆ are investigated by angle-resolved photoemission spectroscopy, utilizing tunable photon energies. Our results reveal (i) the three-dimensional k-space nature of the Fermi surface, (ii) the localized-to-itinerant transition of f electrons occurs at a much high temperature than the hybridization gap opening temperature, and (iii) the “relocalization” of itinerant f-electrons below 25 K, which could be the precursor to the establishment of magnetic order.     

GaN(0001)表面的电子结构研究

报道了纤锌矿WZ(wurtzite)GaN(0001)表面的电子结构研究.采用全势线性缀加平面波方法计算得到了GaN分波态密度,与以前实验结果一致.讨论了Ga3d对GaN电子结构的影响.利用同步辐射角分辨光电子能谱技术研究了价带电子结构.通过改变光子能量的垂直出射谱勾画沿ΓA方向的体能带结构,与计算得到的能带结构符合得较好.根据沿ΓK和ΓM方向的非垂直出射谱,确定了两个表面态的能带色散 关键词： GaN 角分辨光电发射 全势线性缀加平面波 电子结构     

拓扑近藤绝缘体SmB6中的奇异电子性质

拓扑近藤绝缘体是一种本征的强关联拓扑电子体系，其体能隙来源于近藤关联效应。自2010年拓扑近藤绝缘体的理论概念被提出后，六硼化钐(SmB6) 作为第一种被预测为拓扑近藤绝缘体的材料在这十多年中被多种实验手段反复研究验证，被广泛接受认为是第一种拓扑近藤绝缘体。在这篇综述中，我们回顾了关于SmB6 的一些重要实验结果，比如电输运测量，角分辨光电子能谱(ARPES), 表面形貌分析(STM) 等，并论述了如何通过这些关键的实验证据证实SmB6 的拓扑近藤绝缘物相。同时，我们也展示了SmB6 这一关联电子体系的其他奇异物性，包括中间价态在表面和体内的分离现象，以及量子振荡发现的体振荡信号等等。这些性质表明我们对SmB6 这一材料的理解仍然不充分，其中还有更为丰富的物理值得挖掘。     

Atomic O and H exposure of C-covered and oxidized d-metal surfaces

Carbon coverage, oxidation and reduction of Au, Pt, Pd, Rh, Cu, Ru, Ni and Co layers of 1.5 nm thickness on Mo have been characterized with ARPES and desorption spectroscopy upon exposure to thermal H and O radicals. We observe that only part of the carbon species is chemically eroded by atomic H exposure, yielding hydrocarbon desorption. Exposure to atomic O yields complete carbon erosion and CO₂ and H₂O desorption. A dramatic increase in metallic and non-metallic oxide is observed for especially Ni and Co surfaces, while for Au and Cu, the sub-surface Mo layer is much more oxidized. Although volatile oxides exist for some of the d-metals, there is no indication of d-metal erosion. Subsequent atomic H exposure reduces the clean oxides to a metallic state under desorption of H₂O. Due to its adequacy, we propose the atomic oxygen and subsequent atomic hydrogen sequence as a candidate for contamination removal in practical applications like photolithography at 13.5 nm radiation.     

Growth and sacrificial oxidation of transition metal nanolayers

Growth and oxidation of Au, Pt, Pd, Rh, Cu, Ru, Ni and Co layers of 0.3-4.3 nm thickness on Mo have been investigated with ARPES and AFM. Co and Ni layers oxidize while the Mo remains metallic. For nobler metals, the on top O and oxidation state of subsurface Mo increase, suggesting sacrificial e⁻ donation by Mo. Au and Cu, in spite of their significantly lower surface free energy, grow in islands on Mo and actually promote Mo oxidation. Applications of the sacrificial oxidation in nanometer thin layers exist in a range of nanoscopic devices, such as nano-electronics and protection of e.g. multilayer X-ray optics for astronomy, medicine and lithography.     

Unusual electronic structure of Dirac material BaMnSb_2 revealed by angle-resolved photoemission spectroscopy

High resolution angle resolved photoemission measurements and band structure calculations are carried out to study the electronic structure of BaMnSb_2. All the observed bands are nearly linear that extend to a wide energy range. The measured Fermi surface mainly consists of one hole pocket around Γ and a strong spot at Y which are formed from the crossing points of the linear bands. The measured electronic structure of BaMnSb_2 is unusual and deviates strongly from the band structure calculations. These results will stimulate further efforts to theoretically understand the electronic structure of BaMnSb_2 and search for novel properties in this Dirac material.     

Electrons in cuprates: A consistent ARPES view

Angle resolved photoemission spectroscopy (ARPES) has been playing a crucial role in understanding of physics behind high-temperature superconductivity. Our ARPES investigation of superconducting cuprates, performed over a decade and accomplished by very recent results, suggests a consistent view of electronic interactions in cuprates which provides natural explanation of both the origin of the pseudogap state and the mechanism for high-temperature superconductivity. Within this scenario, the spin-fluctuations play a decisive role in formation of the fermionic excitation spectrum in the normal state and are sufficient to explain the high transition temperatures to the superconducting state while the pseudogap phenomenon is a consequence of a Peierls-type intrinsic instability of electronic system to formation of an incommensurate density wave. In view of these results and their projection to numerous other materials, two general questions are arising: is the normal state in 2D metals ever stable and how does this intrinsic instability interplay with superconductivity?     

Bulk vs. surface effects in ARPES experiment from La2/3Sr1/3MnO3 thin films

Experiments directly probing the electronic states using angle-resolved photoemission (ARPES) were carried out on La_2/3Sr_1/3MnO₃ in order to elucidate its electronic properties. ARPES is a surface sensitive technique where bulk and surface states are usually both present. We present high-resolution ARPES studies in the (1 0 0) and (1 1 0) mirror planes and compare them with simulated ARPES based on GGA + U band structure calculations. In the (1 1 0) mirror plane we identify surface umklapps accounted by surface reconstruction which couple to bulk electronic states. As predicted by the simulated spectra there is additional spectral intensity at the Fermi level detected in ARPES data due to k_⊥-broadening effects in the photoemission final states. We demonstrate that this additional spectral intensity is a convenient spectral marker for determination of the k_F Fermi momenta.     

Observations of nodal lines in the topological semimetal ZrSnTe

Performing angle-resolved photoemission spectroscopy(ARPES) and theoretical calculations for ZrSnTe, we find a nodal line in the kx-ky plane with a tiny gap and two nodal lines without gaps along the kzdirection. The constant energy contours are plotted in the kx-ky plane at a photon energy of 30 e V to examine the gapping feature of the nodal line. In addition, we depict the band dispersions along the Γ-M and Γ-X directions from the ARPES images at photon energies ranging from 24 to 40 e V. The kz mapping confirms the presence of stable Dirac points with obvious kzdependences along the M-A and X-R directions. In this paper, we report the two types of nodal lines associated with the theoretical local-density approximation calculations, broadening the horizons of nodal-line semimetal research.