首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   335篇
  免费   14篇
  国内免费   2篇
化学   29篇
晶体学   95篇
物理学   227篇
  2016年   1篇
  2015年   1篇
  2014年   3篇
  2013年   2篇
  2012年   1篇
  2011年   4篇
  2010年   8篇
  2009年   58篇
  2008年   73篇
  2007年   53篇
  2006年   47篇
  2005年   13篇
  2004年   10篇
  2003年   15篇
  2002年   8篇
  2001年   9篇
  2000年   9篇
  1999年   10篇
  1998年   7篇
  1997年   2篇
  1996年   1篇
  1995年   1篇
  1994年   2篇
  1993年   2篇
  1992年   4篇
  1991年   1篇
  1990年   2篇
  1989年   1篇
  1988年   1篇
  1986年   2篇
排序方式: 共有351条查询结果,搜索用时 15 毫秒
1.
Sub-critical crack growth rates of soda-lime-silicate glass and less brittle glass with different fictive temperatures were compared using the DCDC method under both dry and humid atmospheres in order to investigate the origin of the unique mechanical features of the less brittle glass developed by Ito and his collaborators. In both dry and humid atmospheres, the crack velocity of the soda-lime-silicate glass was slower than that of the less brittle glass. For both glasses, the glass sample with higher fictive temperature showed a slower crack growth rate under both dry and humid atmospheres. These observations can be explained by the tendency for the plastic flow at the crack tip; the soda-lime-silicate glass is expected to show easier plastic flow under tension than the less brittle glass, and also the samples with higher fictive temperatures are expected to show easier plastic flow, leading to greater fracture toughness, KIC, and slower crack growth rate.  相似文献   
2.
The electrical switching behaviour of As45Te55-xInx (5≤x≤15) and As50Te50-xInx (2.5≤x≤11.5) has been studied over a wide range of compositions. These glasses are found to exhibit threshold switching. The composition dependence of switching voltage (Vt) has been found to exhibit a change in slope and a local minimum at compositions x=10 and 12.5 for As45Te55-xInx and x=7.5 and 10.8 for As50Te50-xInx, respectively. The slope change in Vt verses x and the local minimum have been identified using two network topological effects, namely the rigidity percolation threshold and the chemical threshold. Received: 23 August 2001 / Accepted: 27 August 2001 / Published online: 11 February 2002  相似文献   
3.
Amorphous and nanocrystalline ribbons of NANOPERM, FINEMET and HITPERM were studied by Mössbauer spectroscopy (MS) after the influence of external factors: different annealing atmospheres, tensile stress and several kinds of corrosion. MS is a suitable tool for such studies because the spectral parameters are very sensitive to changes in the vicinity of the probe — 57Fe nuclei. The most sensitive parameters were hyperfine magnetic field in crystalline component, average hyperfine field in amorphous component and direction of net magnetic moments. Influence of external factors modified also the structure of the alloys, i.e. new or modified phases were identified by MS phase analysis.  相似文献   
4.
Fe-doped TiO2 powder was prepared by high-energy ball milling, using TiO2 Degussa P-25 and α-Fe powders as the starting materials. The structure and magnetic properties of the Fe-doped TiO2 powder were studied by X-ray diffraction, 57Fe Mossbauer spectroscopy and vibrating sample magnetometer. The Reitveld refinement of XRD revealed that ball milling not only triggered incorporation of Fe in TiO2 lattice but also induced the phase transformation from anatase to rutile in TiO2 and consequently the milled Fe-doped TiO2 powder contained only rutile.57Fe Mössbauer effect measure showed that Fe atoms existed in Fe2+ and Fe3+ state, which were assigned to the solid solution FexTi1−xO2. The magnetization measurements indicated that the milled Fe-doped TiO2 powder was ferromagnetic above room temperature. The ferromagnetism in our milled Fe-doped TiO2 powder seemingly does not come from Fe and iron oxides particles/clusters but from the Fe-doped TiO2 powder matrices.  相似文献   
5.
We report a method to grow thin strain-released InAs layer on GaAs (1 0 0) substrates by molecular beam epitaxy. We have shown that by controlling the growth parameters, a thin 2D InAs layer can be grown during initial stages, which eventually serves as a buffer layer to trap dislocations and epitaxial regrowth of InAs on this buffer results in high crystal quality. The size dependence of the InAs islands formed during initial stages with growth time has been studied by atomic force microscopy. With continuous short-time epitaxial growth during various stages, the InAs growth mode transfers from 3D to 2D. The introduction of dislocations into InAs epitaxial islands and their behavior during initial growth stage has been theoretically studied. The theoretical results are in remarkable agreement with the experimental results and shows that once the film is formed, the film strain is totally relaxed. The 200 nm thick InAs epilayer grown on this buffer shows a narrow X-ray diffraction peak. Such InAs strain-released buffer layer would be useful for regrowth of high In content based materials on top of it for electronics and optoelectronics device applications.  相似文献   
6.
Surface states become important in particles with reduced size as the surface to volume ratio increases. Here we provide direct evidence of water-induced structure buildup and stabilization of nanocrystalline ZnS. The ZnS nanoparticles, prepared employing a non-equilibrium route, provide an ideal platform to investigate microscopic details of water induced structural transformation and thus demonstrate the role of S-H interactions in the time-evolution of crystalline behaviour in these particles. The colossal changes observed make these materials ideal for water sensing.  相似文献   
7.
The composition and size of optically active CdxZn1−xSe/ZnSe quantum dots are estimated with a previously developed method. The results are then compared with those obtained for CdxZn1−xSe/Zn0.97Be0.03Se QDs. We show that introducing Be into the barrier material enhances both Cd composition and quantum size effect of optically active quantum dots.  相似文献   
8.
A specially prepared Ga1−xAlxAs sample with a laterally graded alloy composition has allowed a novel investigation of resonance Raman scattering from the optical phonons. Instead of varying the exciting light energy, the resonance is probed by changing the alloy composition at fixed incident energy. Both incoming and outgoing resonances are observed at the direct gap of the alloy, free of the usual overwhelming photoluminescence background.  相似文献   
9.
Far infrared reflectivity measurements are performed on a series of GaAs/AlAs multiple quantum well (MQW) heterostructures with systematically varied thicknesses of the constituent layers. In addition to the artificial anisotropy we observe two distinct bulk-like Reststrahlen regions. The widths of the GaAs-like and the AlAs-like Reststrahlen bands strongly depend on the relative thicknesses of the constituent layers of the MQW heterostructures, in excellent agreement with the predictions of the effective-medium theory.Prof. Aldo Cingolani passed away just before the publication of this article. We would like to dedicate this paper to his memory  相似文献   
10.
Polychlorinated dibenzo-p-dioxins and dibenzofurans (PCDD/Fs) were analysed in 95 mountainous and park soil samples collected from 19 sites in Beijing, China. The levels of PCDD/Fs in the mountainous soils were low (0.086–0.59; mean 0.29; median 0.23 ng I-TEQ/kg). The levels in the park soils far from the city centre were a little higher (0.39–0.88, mean0.68; median 0.75 ng I-TEQ/kg). However, in the park soils near to the city centre, there were an abrupt jump in their concentration (1.7–3.2; mean 2.3, median 1.7 ng I-TEQ/kg), about ten times higher than those in the mountainous sites. Comparison of PCDD/Fs homologues and congener compositions between possible sources and samples indicated that the mountainous and park soils in Beijing had been slightly contaminated mainly by sodium pentachlorophenate, sewage sludge, atmospheric deposition and vehicle exhaust. These results have also been supported by the principal component analysis.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号