Model-dependent nature of blowtorch effect on the escape and equilibration rates

We analyze the relaxation behavior of a bistable system when the background temperature profile is inhomogeneous due to the presence of a localized hot region (blowtorch) on one side of the potential barrier. Since the diffusion equation for inhomogeneous medium is model-dependent, we consider two physical models to study the kinetics of such system. Using a conventional stochastic method, we obtain the escape and equilibration rates of the system for the two physical models. For both models, we find that the hot region enhances the escape rate from the well where it is placed while it retards the escape rate from the other well. However, the value of the escape rate from the well where the hot region is placed differs for the two models while that of the escape rate from the other well is identical for both. This work, for the first time, gives a detailed report of the similarities and differences of the escape rates and, hence, exposes the common and distinct features of the two known physical models in determining the way the bistable system relaxes. Received 25 September 2001     

A new formula for the saddle-to-scission time

We propose a new formula for the saddle-to-scission time that is more general that the one based on Kramers' approach. Its validity and applicability is then studied in detail. Such a formula is useful for the evaluation of the fission time of very heavy nuclei.     

Temperature dependence of aluminum nitride reflectance spectra in vacuum ultraviolet region

Temperature dependence of optical reflectance spectra in vacuum ultraviolet region for aluminum nitride has been measured on high-quality single crystal with synchrotron radiation. The dominant structure due to the interband transition is observed at photon energy around 7.7 eV. With decreasing temperature, the energy position of the dominant structure in the reflectance spectra shifts towards higher energy. The experimental data has been fitted to the Bose-Einstein expression and the obtained parameter related to the strength of the electron-phonon interactions is much smaller than that for the peak at 6.2 eV, suggesting that the higher-lying interband transition energy decreases more slowly with increasing temperature in aluminum nitride (AlN).     

Semi-insulating electrical properties of undoped inp after heat treatment in a phosphorus atmosphere

Nominally undoped InP wafers have been annealed in a phosphorus atmosphere under a pressure of about 5 bar at temperatures of 900 °C for about 80 h. It was found that the electrical properties of the samples changed considerably after this treatment. A room temperature resistivity of up to 2×10⁷cm (semi-insulating behaviour) was obtained in the bulk of the samples. The resistivity finally obtained depends on the starting carrier concentration of the untreated samples. The Hall coefficient and Hall mobility have been measured up to 600 °C. The results can be interpreted in terms of a deep electronic level (E _A=0.63 ... 0.65 eV below the conduction band). The Hall coefficient was always found to be negative resulting in a Hall mobility of 1.4 to 4.9×10³ cm²/Vs. The highest resistivity in nominally undoped bulk InP so far reported in the literature [1] was =3.6 × 10⁵cm. Therefore, this paper demonstrates for the first time that a really semi-insulating behaviour of >10⁷ cm can be achieved for bulk InP with the purity of nominally undoped material (10¹⁵ to 10¹⁶cm^–3).     

Modeling DNA beacons at the mesoscopic scale

We report model calculations on DNA single strands which describe the equilibrium dynamics and kinetics of hairpin formation and melting. Modeling is at the level of single bases. Strand rigidity is described in terms of simple polymer models; alternative calculations performed using the freely rotating chain and the discrete Kratky-Porod models are reported. Stem formation is modeled according to the Peyrard-Bishop-Dauxois Hamiltonian. The kinetics of opening and closing is described in terms of a diffusion-controlled motion in an effective free-energy landscape. Melting profiles, dependence of melting temperature on loop length, and kinetic time scales are in semiquantitative agreement with experimental data obtained from fluorescent DNA beacons forming poly(T) loops. Variation in strand rigidity is not sufficient to account for the large activation enthalpy of closing and the strong loop length dependence observed in hairpins forming poly(A) loops. Implications for modeling single strands of DNA or RNA are discussed.     

Thermal and carrier transport originating from photon recycling and non-radiative recombination in laser micromachining of GaAs thin films

Coupled thermal and carrier transports (electron/hole generation, recombination, diffusion and drifting) in laser photoetching of GaAs thin film is investigated. A new volumetric heating mechanism originating from SRH (Shockley–Read–Hall) non-radiative recombination and photon recycling is proposed and modeled based on recent experimental findings. Both volumetric SRH heating and Joule heating are found to be important in the carrier transport, as well as the etching process. SRH heating and Joule heating are primarily confined within the space-charge region, which is about 20 nm from the GaAs surface. The surface temperature rises rapidly as the laser intensity exceeds 10⁵ W/m². Below a laser intensity of 10⁵ W/m², the thermal effect is negligible. The etch rate is found to be dependent on the competition between photovoltaic and photothermal effects on surface potential. At high laser intensity, the etch rate is increased by more than 100%, due to SRH and Joule heating. Received: 24 January 2002 / Accepted: 11 April 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. Fax: +1-310/206-2302, E-mail: xiang@seas.ucla.edu     

Adsorption of hydrophobic polyelectrolytes onto oppositely charged surfaces

We present a scaling theory for the adsorption of a weakly charged polyelectrolyte chain in a poor solvent onto an oppositely charged surface. Depending on the fraction of charged monomers and on the solvent quality for uncharged monomers, the globule in the bulk of the solution has either a spherical conformation or a necklace structure. At sufficiently high surface charge density, a chain in the globular conformation adsorbs in a flat pancake conformation due to the Coulombic attraction to the oppositely charged surface. Different adsorption regimes are predicted depending on two screening lengths (the Debye screening length monitored by the salt concentration and the Gouy-Chapman length monitored by the surface charge density), on the degree of ionization of the polymer and on the solvent strength. At low bulk ionic strength, an increase in the surface charge density may induce a transition from an adsorbed necklace structure to a uniform pancake due to the enhanced screening of the intra-chain Coulombic repulsion by the counterions localized near the surface. Received 12 April 2001     

Statistical equilibrium in simple exchange games I

This erratum corrects a mistake in reference [E. Scalas, U. Garibaldi, S. Donadio, Eur. Phys. J. B 53, 267 (2006)]. In that paper, we needed an aperiodic version of the BDY game, but, in formula (1), we incorrectly presented a periodic transition matrix of period 2 in the special case of g = 2 agents. Here, we present the right aperiodic version.     

On causal stochastic equations for log-stable multiplicative cascades

We reformulate various versions of infinitely divisible cascades proposed in the literature using stochastic equations. This approach sheds a new light on the differences and common points of several formulations that have been recently provided by several teams. In particular, we focus on the simplification occurring when the infinitely divisible noise at the heart of such model is stable: an independently scattered random measure becomes a stable stochastic integral. In the last section we discuss the D-dimensional generalization.     

Band bending of n‐InN epilayers and exact solution of the classical Thomas–Fermi equation

The exact solution of the Thomas–Fermi equation for a planar accumulation layer of a degenerate semiconductor is presented. The obtained results are compared with theoretical literature data. The applicability of the solution is demonstrated by using results of electrochemical capacitance–voltage measurements and photoluminescence data for n‐InN epilayers. It has been found that the difference between the electron concentrations estimated from the Hall and photoluminescence measurements is a measure of the electron content in the accumulation layer with acceptable accuracy. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)