High-quality InAlN/GaN heterostructures grown by metal–organic vapor phase epitaxy

We fabricated high-quality InAlN/GaN heterostructures by metal–organic vapor phase epitaxy (MOVPE). X-ray diffraction measurements revealed that InAlN/GaN heterostructures grown under optimal conditions have flat surfaces and abrupt heterointerfaces. Electron mobility from 1200 to 2000 cm²/V s was obtained at room temperature. To our knowledge, this mobility is the highest ever reported for InAlN/GaN heterostructures. We also investigated the relationship between the Al composition and sheet electron density (N_s) for the first time. N_s increased from 1.0×10¹² to 2.7×10¹³ cm⁻² when the Al composition increased from 0.78 to 0.89.     

Molybdenum nitride fibers or tubes via ammonolysis of polysulfide precursor

Millimeter-sized molybdenum nitride (MoN), in the forms of fiber-like prisms or hollow tubes, has been successfully synthesized via thermal ammonolysis of molybdenum polysulfide precursor. The initial morphology of the precursor is well preserved in the final product. This method could be expanded to preparation of other fiber-like nonmetal ceramics without addition of template. The polysulfide precursor (abbreviated to PS), hydrothermally prepared at 30°C (PS1) or 150°C (PS2), was characterized by various methods for better comprehension of the sulfide-nitride topotactic conversion model.     

Structural characterization and X-ray analysis by Williamson–Hall method for Erbium doped Aluminum Nitride nanoparticles,synthesized using inert gas condensation technique

We have synthesized AlN nanoparticles (NPs) doped in-situ with Er (AlN:Er) using inert gas condensation technique. Using x-ray diffraction (XRD) peak broadening analysis with the Williamson–Hall (W–H) Uniform Deformation Model (UDM) the crystallite size of the NPs and the strain in NPs were found to be 80±38 nm and 3.07×10⁻³±0.9×10⁻³ respectively. In comparison, using the Debye–Scherrer's (DS) formula, we have inferred that the crystallite size of the NPs was 23±6 nm and the average strain was 4.3×10⁻³±0.4×10⁻³. The scanning electron microscopy images show that the NPs are spherical and have an average diameter of ∼300 nm. The crystallite size is smaller than the size of the NPs revealing their polycrystalline behavior. In addition, the NPs strain, stress and energy density were also calculated using W–H analysis combined with the Uniform Deformation Stress Model (UDSM) and the Uniform Deformation Energy Density Model (UDEDM). Suggested by the spherical geometry and polycrystalline nature of the AlN NPs, the strain computed from UDM, UDSM and UDEDM were in agreement confirming an isotropic mechanical nature of the particle. Luminescence measurements revealed the temperature dependence of the optical emission of the Er³⁺ ions, confirming the use of AlN:Er NPs for nano-scale temperature sensing.     

Impact of pressure on transport properties of AlGaN/GaN high electron mobility transistor

The properties of Al_xGa_1−xN/GaN high electron mobility transistor (HEMT) impacted by pressure are characterized quantitatively. The results indicate that the dislocation density increases as the critical thickness decreases with increasing pressure. The two-dimensional electron gas density was found to be linearly changeable with the pressure. A simulation has been completed to verify the influence of electron mobility. The results show that the misfit dislocation scattering induced by the pressure is a major limiting factor for the properties of HEMT.     

The beneficial effects of a p-type GaInN spacer layer on the efficiency of GaInN/GaN light-emitting diodes

Light-emitting diodes (LEDs) with a Mg-doped p-type Ga_1−xIn_xN (0 ≤ x ≤ 0.07) spacer layer located between an undoped GaN spacer layer and the electron blocking layer are investigated. The LEDs are found to have comparable peak efficiency but less efficiency droop when the crystal quality of the p-type Ga_1−xIn_xN spacer layer is well-controlled by lowering the growth temperature and by using a suitable In composition and Mg doping concentration. All LED samples with the p-type spacer layer show a smaller efficiency droop compared to a reference LED having an undoped GaN spacer. Among the sample sets investigated, an optical power enhancement of 12% at 111 A/cm² is obtained when inserting a 5 nm-thick p-type Ga_0.97In_0.03N spacer layer. The results support that carrier transport is the key factor in the efficiency droop observed in GaN-based LEDs.