Different acute effects of oral and intratracheal administration of disodium arsenate and gallium arsenide on heme synthesis in rats

The acute influences of arsenic compounds on the metabolism of porphyrins and heme in various organs of rats after oral or intratracheal administration of disodium arsenate (Na₂HAsO₄) and gallium arsenide (GaAs) were examined and compared. For the oral administration experiments, 21 or 84 mg of Na₂HAsO₄, or 2 or 4 g of GaAs, per cm³ saline per kg body weight of each animal was administered to Jcl: Wistar male rats and the organs were removed after exsanguination from the vein of the right axilla under anesthesia with ether, 16 h after administration. In the case of intratracheal administration, rats given 8.2 or 16.4 mg of Na₂HAsO₄, or 0.2 or 0.4 g GaAs per cm³ saline per kg body weight were examined under the same experimental conditions as for the administration route. Increase in the body weight of rats was suppressed after intratracheal administration of the two arsenic compounds. In these rats the hematocrit value increased significantly. These changes were not shown by the orally administered rats. Elevation in δ-aminolevulinate synthase (ALA-S, EC 2.3.1.37) activity in erythroblasts by Na₂HAsO₄ was much higher after intratracheal administration than after oral administration. Suppression in the activities of δ-aminolevulinate dehydratase (ALA-D, EC 4.2.1.24) and porphobilinogen deaminase (PBG-D, EC 4.3.1.8) in peripheral erythrocytes by Na₂HAsO₄ and GaAs were stronger by intratracheal administration than by the oral route. Influences of GaAs on the activity of PBG-D in rat liver were shown to be more effective by oral administration than by the intratracheal route. Oral administration of Na₂HAsO₄ and GaAs had a stronger suppression effect on the activities of ALA-D and PBG-D in rat kidney. It seems from these results that the different extents of the influence of arsenic compounds might depend on the routes of intake.     

Magnetic pole pinning at rectangular defects on MnAs/GaAs(0 0 1)

Strong magnetic poles at characteristic rectangular defects have been observed using a magnetic force microscope on a MnAs(  1 0 0) thin film with the thickness of 30 nm. The MnAs thin film was epitaxially grown on a GaAs(0 0 1) substrate. The magnetic poles were in one-arranging direction, being independent of the magnetization direction of the film. The poles were pinned at the edges of the rectangular defects until just below the Curie temperature, and formed a stable magnetic-field loop on the MnAs surface. The stability of the magnetic pole pinning shows the distinctive feature of the magnetic domain structure on the surface with a strong anisotropy, which was built in the heterostructure of MnAs and GaAs.     

Thermal conductivity, dislocation density and GaN device design

The performance of high power transistor devices is intimately connected to the substrate thermal conductivity. In this study, the relationship between thermal conductivity and dislocation density is examined using the 3 omega technique and free standing HVPE GaN substrates. Dislocation density is measured using imaging cathodoluminescence. In a low dislocation density regime below 10⁵ cm⁻², the thermal conductivity appears to plateau out near 230 W/K m and can be altered by the presence of isotopic defects and point defects. For high dislocation densities the thermal conductivity is severely degraded due to phonon scattering from dislocations. These results are applied to the design of homoepitaxially and heteroepitaxially grown HEMT devices and the efficiency of heat extraction and the influence of lateral heat spreading on device performance are compared.     

衬钽管石墨炉原子吸收法测定痕量镓时基体改进剂的研究及应用

提出用钒和铜混合基体改进剂衬钽管石墨炉原子吸收测定镓的方法。衬钽管使镓的灵敏度提高6倍左右,钒和铜混合基体改进剂不仅能进一步提高灵敏度,而且能提高灰化温度,降低原子化温度,增强抗干扰能力。测定 GSD 标准样品中的镓时,不需对样品进行预分离即可直接进行测定,结果与参考值相符。     

丙烷在无机膜反应器中的芳构化

研究了在固定床反应器和膜反应器中的丙烷芳构化，考察了ＨＺＳＭ－５担载的Ｇａ和Ｐｔ－Ｇａ催化剂对反应的影响。结果表明，采用无机膜反应器可以提高丙烷芳构化选择性，从而提高芳烃收率达１０％以上。在膜反应器中，低碳烷烃选择性降低，烯烃选择性增强。固定床相比，膜反应器在低温时对芳构化反应的促进作用最为显著，但是随着温度升高，其促进作用减弱。     

RE3Ga9Ge (RE=Y, Ce, Sm, Gd and Yb): compounds with an open three-dimensional polygallide framework synthesized from liquid gallium

The RE₃Ga₉Ge compounds (RE=Y, Ce, Sm, Gd and Yb) were synthesized at 850°C in quantitative yield from reactions containing excess liquid Ga. The orthorhombic crystal structure is characterized by a unique three-dimensional open Ga framework with parallel straight tunnels. In the tunnels, inserted are arrays of the RE atoms together with interpenetrated monoatomic RE-Ga-Ge planes. A complex disordered arrangement of the RE and Ga atoms is observed in the monoatomic plane. Depending on the extent of disorder, the crystal structure could be presented either in a sub-cell (no ordering) or in a super-cell (partial ordering). Single-crystal X-ray data for Ce₃Ga₉Ge sub-structure: space group Immm, Z=2, cell parameters a=4.3400(12) Å; b=10.836(3) Å; and c=11.545(3) Å; super-structure: space group Cmma, Z=8, cell parameters a=8.680(3) Å; b=23.090(7) Å; and c=10.836(3) Å. The refinement based on the full-matrix least squares on F_o²[I>2σ(I)] converged to final residuals R₁/wR₂=0.0226/0.0528 and 0.0729/0.1569 for the sub- and super-structures, respectively. The relationship between the disordered sub-structure and partially ordered super-structure is discussed. Magnetic susceptibility measurements show Curie-Weiss behavior at the temperatures above 30 K with the negative Weiss constants Θ=−49(1) and−7.7 K for Gd and Ce analogs, respectively. An antiferromagnetic transition is observed in the Gd analog at T_N=26.1 K. The μ_eff obtained for both analogs is close to the RE³⁺ free-ion value.     

Synthese und Molekülstrukturen von N‐substituierten Diethylgallium‐2‐pyridylmethylamiden

Synthesis and Molekular Structures of N‐substituted Diethylgallium‐2‐pyridylmethylamides (2‐Pyridylmethyl)(tert‐butyldimethylsilyl)amine ( 1a ) and (2‐pyridylmethyl)‐di(tert‐butyl)silylamine ( 1b ) form with triethylgallane the corresponding red adducts 2a and 2b via an additional nitrogen‐gallium bond. These oily compounds decompose during distillation. Heating under reflux in toluene leads to the elimination of ethane and the formation of the red oils of [(2‐pyridylmethyl)(tert‐butyldimethylsilyl)amido]diethylgallane ( 3a ) and [(2‐pyridylmethyl)‐di(tert‐butyl)silylamido]diethylgallane ( 3b ). In order to investigate the thermal stability solvent‐free 3a is heated up to 400 °C. The elimination of ethane is observed again and the C‐C coupling product N, N′‐Bis(diethylgallyl)‐1, 2‐dipyridyl‐1, 2‐bis(tert‐butyldimethylsilyl)amido]ethan ( 4 ) is found in the residue. Substitution of the silyl substituents by another 2‐pyridylmethyl group and the reaction of this bis(2‐pyridylmethyl)amine with GaEt₃ yield triethylgallane‐diethylgallium‐bis(2‐pyridylmethyl)amide ( 5 ). The metalation product adds immediately another equivalent of triethylgallane regardless of the stoichiometry. The reaction of GaEt₃ with 2‐pyridylmethanol gives quantitatively colorless 2‐pyridylmethanolato diethylgallane ( 6 ).     

镓(Ⅲ)-茜素氨羧络合剂在碳糊电极上的阳极吸附伏安法研究及应用

研究了镓(Ⅲ)-茜素氨羧络合剂(ALC)在碳糊电极上的阳极吸附伏安行为,并以此建立了一种高灵敏度、高选择性测定镓的吸附伏安法.在0.12 mol/L HAc-NaAc-0.24 mol/L邻苯二甲酸氢钾底液(pH 4.5)中,-0.10 V (vs.SCE) 富集90 s (或180 s),以250 mV/s扫速线性扫描至0.90 V, Ga3+-ALC在碳糊电极上产生灵敏的与ALC的峰电位相差近230 mV的吸附氧化峰,其二次导数峰电流与镓浓度在5.0×10-10～8.0×10-7 mol/L范围内呈线性关系;富集240 s检出限达3.0×10-10 mol/L(S/N=3).探讨了电极反应机理.该法用于粮食样品中镓的测定,结果满意.     

Atomic structure of InAs quantum dots on GaAs

In recent years, the self-assembled growth of semiconductor nanostructures, that show quantum size effects, has been of considerable interest. Laser devices operating with self-assembled InAs quantum dots (QDs) embedded in GaAs have been demonstrated. Here, we report on the InAs/GaAs system and raise the question of how the shape of the QDs changes with the orientation of the GaAs substrate. The growth of the InAs QDs is understood in terms of the Stranski–Krastanow growth mode. For modeling the growth process, the shape and atomic structure of the QDs have to be known. This is a difficult task for such embedded entities.

In our approach, InAs is grown by molecular beam epitaxy on GaAs until self-assembled QDs are formed. At this point the growth is interrupted and atomically resolved scanning tunneling microscopy (STM) images are acquired. We used preparation parameters known from the numerous publications on InAs/GaAs. In order to learn more about the self-assemblage process we studied QD formation on different GaAs(0 0 1), (1 1 3)A, and ( )B substrates. From the atomically resolved STM images we could determine the shape of the QDs. The quantum “dots” are generally rather flat entities better characterized as “lenses”. In order to achieve this flatness, the QDs are terminated by high-index bounding facets on low-index substrates and vice versa. Our results will be summarized in comparison with the existing literature.