Current Density-Dependent Thermal Stability of ZnSe Nanowire in M-S-M NanostructureD

Due to semiconductor nanowire （NW） having a very tiny diameter, the electronic devices based on metal-semiconductor NW-metal （M-S-M） nanostruc- ture can carry a very large current density com- pared to electronics based on bulk semiconductors. A small mass of a NW also means a small heat capacitance. In this case, any small energy trans- fer from the current-carry electrons to local ionic or/and lattice vibrations in NWs may cause a sub- stantial self-heating of the NWs. Thus thermal insta- bility of NWs in M-S-M nanostructure due to Joule heating has become a fundamentally and technolog- ically important issue concerning the performance of semiconductor NW-based nanoelectronics and has at- tracted a lot of attention. The failure behaviors of various semiconductor and metallic NWs inves- tigated by in situ transmission electron microscopy （TEM） and confocal micro-Raman spectroscopy re- spectively have confirmed semiconductor NWs includ- ing Si, Ge, GaN, ZnO, Sn02, Ti02, ZnSe and ZnTe NWs electrically broken by thermal evaporation due to Joule heating and metallic NWs electrically de- stroyed by electromigration. Electron-phonon in- teraction that transfers energy from conduction elec- trons to the ions in the material causes Joule heating. Electromigration due to the transfer of the momentum of conduction electrons to the ions causes migration of atoms in the material when high current density flows through a circuit. The different failure mechanisms of these NWs are significantly materials-dependent due to the difference of their chemical and physical prop- erties and have a very close relation with the param- eters governing the electron transport mechanism at the metal-semiconductor （M-S） nanocontact such as Schottky barrier and bias polarity .     

大学物理实验操作示范对学生实验技能的作用

本文主要讲述大学物理实验中基础实验操作示范的重要性,就示范操作过程中提出几点建议,并对教师的实验操作技术提出一些规范性要求。     

Matlab GUI在驻波法测声速实验中的应用

结合教学实际,利用Matlab GUI编写了三个程序,分别用来模拟理想驻波的形成、对比合成声场振幅与声压振幅、模拟驻波法测声速。直观形象的演示,既有助于学生理解实验原理,又可以激发他们的学习兴趣。     

Enhanced Current Carrying Capability of Au-ZnSe Nanowire-Au Nanostructure via High Energy Electron Irradiation

To enhance the performance of nanoelectronics based on Au-ZnSe nanowire （NW）-Au （M-S-M） nanostructure, the effect of irradiation of the high energy electron beam emitted from the electron gun of a transmission electron microscope operated at 200kV on the current carrying capability of M-S-M nanostructure is investigated in sftu. Focusing the high energy electron beam on a Au electrode, the current carrying capability of the M-S-M nanostructure can be enhanced significantly with respect to the case of the electron beam being switched off. In this case, the electrons in the electrode are excited by the incident high energy electron and can freely tunnel through the Schottky barriers at the metal-semiconductor NW （M-S） nanocontacts, which can effectively reduce Joule heat dissipation and remarkably improve the current carrying capability of M-S-M nanostructure due to the fact that the current carrying capability highly depends on the Joule heating effect of Schottky barriers at M-S nanocontacts.