GaN/In_xGa_(1-x)N型最后一个量子势垒对发光二极管内量子效率的影响

GaN/In_xGa_(1-x)N型最后一个量子势垒结构能有效提高发光二极管(LED)器件内量子效率,缓解LED效率随输入电流增大而衰减的问题.本文综述了该结构及其结构变化——In组分梯度递增以及渐变、GaN/In_xGa_(1-x)N界面极化率改变等对改善LED器件性能的影响及优势,归纳总结了不同结构的GaN/In_xGa_(1-x)N型最后一个量子垒的工作机理,阐明极化反转是该结构提高LED性能的根本原因.在综述该结构发展的基础之上,通过APSYS仿真计算,进一步探索和深入分析了该结构中In_xGa_(1-x)N层的In组分及其厚度变化对LED内量子效率的影响.结果表明:In组分的增加有助于在GaN/In_xGa_(1-x)N界面产生更多的极化负电荷,增加GaN以及电子阻挡层处导带势垒高度,减少电子泄漏,从而提高LED的内量子效率;但GaN/In_xGa_(1-x)N型最后一个量子势垒中In_xGa_(1-x)N及GaN层厚度的变化由于会同时引起势垒高度和隧穿效应的改变,因而In_xGa_(1-x)N和GaN层的厚度存在一个最佳比值以实现最大化的减小漏电子,提高内量子效率.     

A polarization mismatched p-GaN/p-Al0.25Ga0.75N/p-GaN structure to improve the hole injection for GaN based micro-LED with secondary etched mesa

A low hole injection efficiency for InGaN/GaN micro-light-emitting diodes (μLEDs) has become one of the main bottlenecks affecting the improvement of the external quantum efficiency (EQE) and the optical power. In this work, we propose and fabricate a polarization mismatched p-GaN/p-Al$_{0.25}$Ga$_{0.75}$N/p-GaN structure for 445 nm GaN-based μLEDs with the size of $40 \times 40 $μm$^{2}$, which serves as the hole injection layer. The polarization-induced electric field in the p-GaN/p-Al$_{0.25}$Ga$_{0.75}$N/p-GaN structure provides holes with more energy and can facilitate the non-equilibrium holes to transport into the active region for radiative recombination. Meanwhile, a secondary etched mesa for μLEDs is also designed, which can effectively keep the holes apart from the defected region of the mesa sidewalls, and the surface nonradiative recombination can be suppressed. Therefore, the proposed μLED with the secondary etched mesa and the p-GaN/p-Al$_{0.25}$Ga$_{0.75}$N/p-GaN structure has the enhanced EQE and the improved optical power density when compared with the μLED without such designs.