Photoluminescence characteristics and energy transfer between Bi~（3＋） and Eu~（3＋） in Na_2O–CaO–GeO_2–SiO_2 glass

We report the photoluminescence（PL） of Eu^3＋-doped glass with Bi^3＋as a sensitizer. The specific glass system with the strong enhancement of the red emission of Eu3＋is obtained by adding a small number of Bi3＋ions instead of increasing the Eu^3＋ concentration. The emission band of Bi3＋overlaps with the excitation band of Eu^3＋ and the lifetime decay curves,resulting in a very efficient energy transfer from Bi^3＋ to Eu^3＋. The probability of energy transfer is strongly dependent on Bi^3＋ concentration. In addition, the intensity of 4f–4f transition is much stronger than that of a charge-transfer（CT） band in the excitation spectrum, which indicates that the Na2O–Ca O–Ge O2-Si O2 glass is a suitable red-emitting phosphor with high stability as a candidate for light-emitting diodes（LEDs）.     

Tm3+掺杂SrAl2O4:Eu2+的光激励和热释光性能

通过高温固相法制备出Sr_{0.98-xAl2O4:0.02Eu²⁺,xTm³⁺(x=0,0.01,0.02,0.03,0.04,0.05)系列样品,并对其光激励和热释光性能进行了研究。在SrAl2O4:Eu²⁺原有陷阱能级结构的基础上,通过Tm³⁺的掺杂引入了更深的陷阱TB,并增加原有陷阱TA浓度,进而优化了材料的光存储容量及光激励特性。对比研究了系列样品的初始光激励发光强度和热释光强度随着Tm³⁺掺杂量的变化规律,证实陷阱TB为光激励发光提供了有效俘获中心。当Tm³⁺的掺杂摩尔分数x=0.03时,材料中的陷阱TB的浓度达到最高值,同时光激励发光强度最大。对比Tm³⁺共掺前后热释光图谱,通过Chen's半宽法计算出了引入陷阱TB的陷阱深度。实验结果证实材料中TB的浓度对其光激励发光性能起着决定性的作用。在980 nm激发下,由深陷阱TB释放出来的电子可以再次被浅陷阱TA俘获,这种浅陷阱TA的再俘获效应在光激励发光过程中表现为光激励余辉现象。}