Physics of the insulating phase in dilute two-dimensional electron gas

We propose to use the radiofrequency single-electron transistor as an extremely sensitive probe to detect the time-periodic ac signal generated by a sliding electron lattice in the insulating state of the two-dimensional electron gas. We also propose to use the optically-pumped NMR technique to probe the electron spin structure of the insulating state. We show that the electron effective mass and spin susceptibility are strongly enhanced by critical fluctuations of the electron lattice in the vicinity of the metal-insulator transition, as observed in experiment.     

Competitive formation of 4-aminoisoxazoles and 5-aminooxazoles in the cyclization reactions of O-alkylated hydroxyimino nitriles

Base-catalyzed cyclization of O-alkylated α-hydroxyimino nitriles gave mixtures of 4-aminoisoxazoles and 5-aminooxazoles, their ratio depending on the substituent structures and the reaction conditions. The formation mechanism of 5-aminooxazoles in this reaction is discussed. Published in Russian in Izvestiya Akademii Nauk. Seriya Khimicheskaya, No. 10, pp. 1773–1780, October, 2006.     

The local field effects in resonance Raman scattering Structural anisotropy studies in some nematic cyanophenyl derivatives

Abstract

Different methods for the determination of the local field anisotropy in liquid crystals are analysed and the problems resulting from their application are outlined. One such method, namely that based on the comparison of the polarization of resonance Raman scattering and absorption bands is studied in more detail. The method is applied to determine the structural anisotropy for the 4-n-pentyl-(4′-cyanophenyl) derivatives of benzene, cyclohexane and bicyclooctane. To account for the difference between the optical properties of the probe and of the solvent at the wavelength of the scattered light the local field factor is treated theoretically within the framework of an anisotropic continuous dielectric medium.     

Origin of Porous Silicon Photoluminescence Peaks in the Wavelength Range 460–700 nm

The change in the photoluminescence peaks of porous silicon at λ = 640–670 and 540–560 nm at 300 and 77 K, as well as their behavior after low-temperature annealing of the samples at 500°С, has been studied. The change in these peaks correlated with that in the IR spectra. The peak at 640–670 nm has been explained by the existence Si–OH groups on the porous silicon layers and the peak at 540–560 nm, by the photoluminescence of the silicon matrix per se.