To the application of the emission Mössbauer and positron annihilation spectroscopies for detection of carcinogens

Being the main cause of cancer, almost all chemical carcinogens are strong electrophiles, that is, they have a high affinity for the electron. We have shown that positron annihilation lifetime spectroscopy (PALS) is able to detect chemical carcinogens by their inhibition of positronium (Ps) formation in liquid media. Electrophilic carcinogens intercept thermalized track electrons, which are precursors of Ps, and as a result, when they are present Ps atom does not practically form. Available biophysical data seemingly indicate that frozen solutions model better an intracellular medium than the liquid ones. So it is reasonable to use emission Mössbauer spectroscopy (EMS) to detect chemical carcinogens, measuring the yield of ⁵⁷Fe²⁺ions formed in reactions of Auger electrons and other secondary electrons they produced with ⁵⁷Fe³⁺. These reactions are similar to the Ps formation process in the terminal part the positron track: e⁺+ e^? =>Ps. So EMS and PALS are complementary methods for detection of carcinogenic compounds.     

Tube-wave propagation in a fluid-filled borehole generated by a single point force applied to the surrounding formation

Propagation of tube waves in an infinite fluid-filled borehole, generated by a single-force point source placed in the elastic surrounding formation, is analyzed in the long-wave approximation. Integral representations of the precise solution are obtained both for fast and slow formations. An asymptotic analysis of tube-wave propagation in the fluid-filled borehole is performed on the basis of these two integral representations. The complete asymptotic wave field in the borehole fluid for a fast formation consists of P and SV phases and the lowest eigenmode of the Stoneley wave (tube wave). For a slow formation the conical Stoneley wave (Mach wave) is generated. It appears only behind the critical angle defined by the ratio of the S wave velocity in the formation to the low-frequency Stoneley wave velocity and decays weakly with an offset. Asymptotic wave forms are in good agreement with wave forms obtained by straightforward calculations.     

Photoreflectance study of plasma-etched semi-insulating GaAs substrates treated

Semi-insulating GaAs(100) substrates subjected to ion plasma etching in different regimes have been investigated by photoreflectance spectroscopy. The photoreflectance spectra of the processed samples exhibit Franz-Keldysh oscillations, which indicate a decrease in the defect density in the surface region. On the basis of the experimental data and the results of simulation of the photoreflectance spectra, optimal regimes of sample etching have been found.     

Dielectric and photoelectric properties of Pb(Mg1/3Ta2/3O3 crystals

The temperature dependence of the dielectric constant ɛ and the spectral dependence of the photoconductivity of Pb(Mg_1/3Ta_2/3)O₃ crystals are investigated. The width of the band gap (3.4 eV) is determined. It is found that above the temperature of the maximum of the dielectric constant, its reciprocal 1/ɛ varies with temperature first quadratically and then according to a linear law, as is characteristic of ferroelectrics with a smeared phase transition. The smearing parameter of the transition estimated from the experimental data is close to the value calculated assuming the absence of long-range order in the arrangement of the Mg and Ta ions. Fiz. Tverd. Tela (St. Petersburg) 40, 109–110 (January 1998)     

Study of the effects of size quantization in coupled AlxGa1? x As/GaAs/Alx Ga1? x as quantum wells by means of photoreflectance spectroscopy

Photoreflectance spectra are measured in heterostructures with coupled quantum wells at room temperature. The energies of the optical transitions are determined, and their variation with the well width and barrier thickness is studied. The experimental results are compared with the theoretically calculated electron-hole transition energies. Good agreement is obtained for narrow wells. __________ Translated from Optika i Spektroskopiya, Vol. 93, No. 6, 2002, pp. 929–934. Original Russian Text Copyright ? 2002 by Avakyants, Bokov, Galiev, Kaminskiĭ, Kul’bachinskiĭ, Mokerov, Chervyakov.     

Determination of the carrier concentration in doped <Emphasis Type="Italic">n</Emphasis>-GaAs layers by Raman and light reflection spectroscopies

The carrier concentrations in Si-doped n-GaAs films have been determined by Raman and light reflection spectroscopies. The data obtained are in good agreement with the results of Hall measurements. It is shown that the light reflection and Raman spectroscopies supplement each other in determination of carrier concentrations in the range 10¹⁷?10¹⁹ cm^?3.     

Dependence of the domain-wall velocity on the driving field in garnet films

The dependence of the domain-wall velocity on the amplitude of the driving magnetic field pulses is investigated in an iron garnet film of the (YSmCa)₃(FeGe)₅O₁₂ system with a (111) orientation. The results obtained are analyzed from the standpoint of existing theory. A maximum corresponding to the disruption of steady-state motion is observed on the dependence. Thereafter, the velocity at first decreases sharply and then increases. It is theorized that a process involving the periodic generation, propagation, and annihilation of horizontal Bloch lines occurs in the wall in this period. Data are obtained for the velocity saturation region, which confirm a previously proposed empirical formula and a theoretical model, according to which the saturation regime corresponds to a state of chaos. Fiz. Tverd. Tela (St. Petersburg) 39, 660–663 (April 1997)