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Electrical characteristics of In0.05 Ga0.95N/Al0.07Ga0.9aN and In0.05 Ga0.95N/GaN multiple quantum well (MQW) ultraviolet light-emltting diodes (UV-LEDs) at 400hm wavelength are measured. It is found that for InGaN/AlGaN MQW LEDs, both ideality factor and parallel resistance are similar to those of InGaN/GaN MQW LEDs, while series resistance is two times larger. It is suggested that the Al0.07Ga0.93N barrier layer did not change crystal quality and electrical characteristic of p-n junction either, but brought larger series resistance. As a result, InGaN/AlGaN MQW LEDs suffer more serious thermal dissipation problem although they show higher light output efficiency. 相似文献
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