A 3D SiC MOSFET with poly-silicon/SiC heterojunction diode

A three-dimensional(3D)silicon-carbide(SiC)trench metal-oxide-semiconductor field-effect transistor(MOSFET)with a heterojunction diode(HJD-TMOS)is proposed and studied in this work.The SiC MOSFET is characterized by an HJD which is partially embedded on one side of the gate.When the device is in the turn-on state,the body parasitic diode can be effectively controlled by the embedded HJD,the switching loss thus decreases for the device.Moreover,a highly-doped P+layer is encircled the gate oxide on the same side as the HJD and under the gate oxide,which is used to lighten the electric field concentration and improve the reliability of gate oxide layer.Physical mechanism for the HJD-TMOS is analyzed.Comparing with the conventional device with the same level of on-resistance,the breakdown voltage of the HJD-TMOS is improved by 23.4%,and the miller charge and the switching loss decrease by 43.2%and 48.6%,respectively.     

母线含非圆曲线的超声变幅杆精确加工的研究

介绍在普通数控车床上准确加工母线含非圆曲线的超声变幅杆的两种通用程序的编制方法及应用。方法一以等弦长划分待加工曲线决定节点,以平均曲率半径作为插补圆半径,以C语言编制出加工代码生成软件。方法二采用VB6编程,使用双圆弧法进行插补,伸缩步长法进行误差控制和决定节点,可设定并控制插补误差理论值,运行时生成的NC代码指令条数少,适应任何超声变幅杆的加工,界面友好易用。上述两程序在进行切削加工前,均可全程模拟加工过程。两软件经分别在GSK-928和G-CNC6135A(G)数控车床上应用,效果良好。而第一软件较完善。